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公开(公告)号：US10109553B2
公开(公告)日：2018-10-23
申请号：US15471090
申请日：2017-03-28
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Alan B. Botula , Max L. Lifson , James A. Slinkman , Theodore G. Van Kessel , Randy L. Wolf
IPC: H01L29/08 , H01L23/367 , H01L29/06 , H01L29/732 , H01L29/41 , H01L29/45
Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
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公开(公告)号：US10068827B2
公开(公告)日：2018-09-04
申请号：US15401660
申请日：2017-01-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Alan B. Botula , Max L. Lifson , James A. Slinkman , Theodore G. Van Kessel , Randy L. Wolf
IPC: H01L29/08 , H01L23/367 , H01L23/373 , H01L21/48 , H01L21/288 , H01L21/3205 , H01L21/02 , H01L29/41
Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
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公开(公告)号：US09666701B2
公开(公告)日：2017-05-30
申请号：US15074165
申请日：2016-03-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Alan B. Botula , Max L. Lifson , James A. Slinkman , Theodore G. Van Kessel , Randy L. Wolf
IPC: H01L29/08 , H01L29/732 , H01L23/367 , H01L23/373 , H01L29/78 , H01L29/45 , H01L23/525 , H01L21/02 , H01L21/285 , H01L21/762 , H01L49/02 , H01L29/06 , H01L29/10 , B82Y10/00 , H01L29/417 , H01L29/41 , H01L21/48 , H01L23/48 , H01L23/485
CPC classification number: H01L23/3677 , B82Y10/00 , H01L21/02112 , H01L21/02178 , H01L21/02189 , H01L21/02271 , H01L21/02488 , H01L21/02554 , H01L21/02603 , H01L21/02628 , H01L21/28518 , H01L21/2855 , H01L21/28568 , H01L21/2885 , H01L21/32051 , H01L21/32053 , H01L21/4882 , H01L21/7624 , H01L23/3731 , H01L23/3738 , H01L23/481 , H01L23/485 , H01L23/5256 , H01L28/20 , H01L29/0649 , H01L29/0676 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/413 , H01L29/41725 , H01L29/45 , H01L29/456 , H01L29/732 , H01L29/78 , H01L2924/0002 , H01L2924/00
Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
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公开(公告)号：US11081572B2
公开(公告)日：2021-08-03
申请号：US16534052
申请日：2019-08-07
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Alan B. Botula , Max L. Lifson , James A. Slinkman , Theodore G. Van Kessel , Randy L. Wolf
IPC: H01L29/732 , H01L23/373 , H01L29/78 , H01L29/45 , H01L23/525 , H01L21/02 , H01L21/285 , H01L29/10 , H01L29/08 , H01L49/02 , H01L29/06 , H01L21/762 , B82Y10/00 , H01L29/417 , H01L29/41 , H01L23/367 , H01L21/48 , H01L21/288 , H01L21/3205 , H01L23/48 , H01L23/485
Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
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公开(公告)号：US09997385B2
公开(公告)日：2018-06-12
申请号：US15490175
申请日：2017-04-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shawn A. Adderly , Samantha D. DiStefano , Jeffrey P. Gambino , Max G. Levy , Max L. Lifson , Matthew D. Moon , Timothy D. Sullivan
CPC classification number: H01L21/67259 , G01B17/00 , G01S15/42 , H01L21/68 , Y10T29/49764 , Y10T279/21
Abstract: An apparatus and an associated method. The apparatus includes a chuck in a process chamber, an array of three or more ultrasonic sensors in the process chamber, a ceramic ring surrounding the chuck, and a controller connected to the ultrasonic sensors. The chuck is configured to removeably hold a substrate for processing. Each ultrasonic sensor may send a respective ultrasonic sound wave to a respective preselected peripheral region of the substrate and receive a respective return ultrasonic sound wave from the preselected peripheral region. The controller may compare a measured position of the substrate on the chuck to a specified placement of the substrate on the chuck based on a measured elapsed time between sending the ultrasonic sound wave and receiving the return ultrasonic sound wave for each ultrasonic sensor. The method compares a measured position of the substrate on the chuck to a specified position on the chuck.
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Patent Agency Ranking
公开(公告)号：US09601606B2
公开(公告)日：2017-03-21
申请号：US14990941
申请日：2016-01-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Alan B. Botula , Max L. Lifson , James A. Slinkman , Theodore G. Van Kessel , Randy L. Wolf
IPC: H01L29/08 , H01L29/732 , H01L23/367 , H01L23/373 , H01L29/78 , H01L29/45 , H01L23/525 , H01L21/02 , H01L21/285 , H01L21/762 , H01L49/02 , H01L29/06 , H01L29/10 , B82Y10/00 , H01L29/417 , H01L29/41 , H01L21/48 , H01L23/48 , H01L23/485
CPC classification number: H01L23/3677 , B82Y10/00 , H01L21/02112 , H01L21/02178 , H01L21/02189 , H01L21/02271 , H01L21/02488 , H01L21/02554 , H01L21/02603 , H01L21/02628 , H01L21/28518 , H01L21/2855 , H01L21/28568 , H01L21/2885 , H01L21/32051 , H01L21/32053 , H01L21/4882 , H01L21/7624 , H01L23/3731 , H01L23/3738 , H01L23/481 , H01L23/485 , H01L23/5256 , H01L28/20 , H01L29/0649 , H01L29/0676 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/413 , H01L29/41725 , H01L29/45 , H01L29/456 , H01L29/732 , H01L29/78 , H01L2924/0002 , H01L2924/00
Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
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公开(公告)号：US20150348876A1
公开(公告)日：2015-12-03
申请号：US14825778
申请日：2015-08-13
Applicant: International Business Machines Corporation
Inventor： James W. Adkisson , Yoba Amoah , Jeffrey P. Gambino , Christine A. Leggett , Max L. Lifson , Charles F. Musante , Sruthi Samala , David C. Thomas
IPC: H01L23/48 , H01L23/00 , H01L23/532
CPC classification number: H01L23/481 , H01L21/76877 , H01L21/76898 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/562 , H01L2924/0002 , H01L2924/00
Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
Abstract translation: 一种包括通过基板的厚度形成贯通基板的方法，从基板的前侧到基板的背面测量基板的厚度，去除基板的第一部分以形成开口 衬底的背面，使得衬底的第二部分保持与贯穿衬底通孔的垂直侧壁直接接触，并用与衬底相比具有较低弹性模量的替代材料填充该开口。
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公开(公告)号：US11152495B2
公开(公告)日：2021-10-19
申请号：US16587290
申请日：2019-09-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Alan B. Botula , Max L. Lifson , James A. Slinkman , Theodore G. Van Kessel , Randy L. Wolf
IPC: H01L29/732 , H01L23/373 , H01L29/78 , H01L29/45 , H01L23/525 , H01L21/02 , H01L21/285 , H01L29/10 , H01L29/08 , H01L49/02 , H01L29/06 , H01L21/762 , B82Y10/00 , H01L29/417 , H01L29/41 , H01L23/367 , H01L21/48 , H01L21/288 , H01L21/3205 , H01L23/48 , H01L23/485 , H01L29/66
Abstract: An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.
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公开(公告)号：US09607929B2
公开(公告)日：2017-03-28
申请号：US14825778
申请日：2015-08-13
Applicant: International Business Machines Corporation
Inventor： James W. Adkisson , Yoba Amoah , Jeffrey P. Gambino , Christine A. Leggett , Max L. Lifson , Charles F. Musante , Sruthi Samala , David C. Thomas
IPC: H01L23/48 , H01L23/00 , H01L21/768 , H01L23/532
CPC classification number: H01L23/481 , H01L21/76877 , H01L21/76898 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/562 , H01L2924/0002 , H01L2924/00
Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
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公开(公告)号：US20150255404A1
公开(公告)日：2015-09-10
申请号：US14195940
申请日：2014-03-04
Applicant: International Business Machines Corporation
Inventor： James W. Adkisson , Yoba Amoah , Jeffrey P. Gambino , Christine A. Leggett , Max L. Lifson , Charles F. Musante , Sruthi Samala , David C. Thomas
IPC: H01L23/00 , H01L23/48 , H01L21/768
CPC classification number: H01L23/481 , H01L21/76877 , H01L21/76898 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/562 , H01L2924/0002 , H01L2924/00
Abstract: A method including forming a through-substrate via through a thickness of a substrate, the thickness of the substrate is measured from a front side of the substrate to a back side of the substrate, removing a first portion of the substrate to form an opening in the back side of the substrate such that a second portion of the substrate remains in direct contact surrounding a vertical sidewall of the through-substrate via, and filling the opening with an alternate material having a lower modulus of elasticity than the substrate.
Abstract translation: 一种包括通过基板的厚度形成贯通基板的方法，从基板的前侧到基板的背面测量基板的厚度，去除基板的第一部分以形成开口 衬底的背面，使得衬底的第二部分保持与贯穿衬底通孔的垂直侧壁直接接触，并用与衬底相比具有较低弹性模量的替代材料填充该开口。
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