公开(公告)号：US20040094763A1

公开(公告)日：2004-05-20

申请号：US10300189

申请日：2002-11-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul D. Agnello ,  Stephen W. Bedell ,  Robert H. Dennard ,  Anthony G. Domenicucci ,  Keith E. Fogel ,  Devendra K. Sadana

IPC: H01L029/04

CPC classification number: H01L21/324 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/7624 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/66893 ,  H01L29/78603

Abstract: Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer. Patterning of the SiGe layer into islands changes the local forces acting at each of the island edges in such a way so that the relaxation force is greater than the forces that oppose relaxation. The absence of restoring forces at the edges of the patterned layers allows the final SiGe film to relax further than it would if the film was continuous.

Abstract translation: 提供形成基本上松弛和低缺陷的SGOI基底材料的热混合方法。 所述方法包括图形化步骤，其用于形成至少包含形成在Ge抗蚀扩散阻挡层顶上的SiGe岛的结构。 将SiGe层图案化成岛以这样的方式改变作用在每个岛边缘处的局部力，使得松弛力大于抵抗放松的力。 在图案化层的边缘处没有恢复力允许最终的SiGe膜比如果膜是连续的那样进一步松弛。

公开(公告)号：US20040241460A1

公开(公告)日：2004-12-02

申请号：US10696601

申请日：2003-10-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC: B32B009/04 ,  B32B015/04 ,  H01L021/36

CPC classification number: H01L21/76243 ,  H01L21/26506 ,  H01L21/76267 ,  Y10T428/12674 ,  Y10T428/12681

Abstract: A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implanted-ion rich region in the Si-containing substrate. The implanted-ion rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

Abstract translation: 提供了使用SIMOX和Ge相互扩散形成基本上松弛的，优质的绝缘体上硅衬底材料的方法。 该方法包括首先将离子注入到含Si衬底中以在含Si衬底中形成植入离子富集区。 注入离子富集区具有足够的离子浓度，使得在随后的高温退火期间形成耐Ge扩散的阻挡层。 接下来，在含Si衬底的表面上形成Ge含有层，然后在允许形成阻挡层和Ge的相互扩散的温度下进行加热步骤，从而形成基本上松弛的单晶SiGe层 阻挡层顶部。

公开(公告)号：US20020173123A1

公开(公告)日：2002-11-21

申请号：US09861596

申请日：2001-05-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Keith E. Fogel ,  Maurice H. Norcott ,  Devendra K. Sadana

IPC: C30B001/00 ,  H01L021/20

CPC classification number: H01L21/76243

Abstract: A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions are implanted into a surface of a Si-containing substrate that includes a sufficient Si thickness to allow for subsequent formation of a buried oxide region in the Si-containing substrate which has a greater content of thermally grown oxide as compared to oxide formed by the implanted oxygen ions followed by an annealing step. The sufficient Si thickness can be obtained by (i) forming a Si layer on the surface of the implanted substrate prior to annealing; (ii) conducting a high-energy, high-dose oxygen implant to ensure that the oxygen ions are implanted a sufficient distance from the surface of the Si-containing substrate; or (iii) conducting a high-energy, low-dose oxygen implant so that less implanted oxide is present in the Si-containing substrate.

Abstract translation: 提供了一种形成具有与由植入的氧离子形成的氧化物相比具有更大含量的热生长氧化物的掩埋氧化物区域的绝缘体上硅（SOI）衬底的方法。 具体地说，本发明的SOI衬底是通过利用其中将氧离子注入包含足够的Si厚度的含Si衬底的表面中以允许随后在含Si衬底中形成掩埋氧化物区域的方法形成的， 与由注入的氧离子形成的氧化物相比，随后进行退火步骤，热生长氧化物的含量更高。 可以通过（i）在退火之前在注入的衬底的表面上形成Si层来获得足够的Si厚度; （ii）进行高能量高剂量氧注入，以确保从含Si衬底表面注入足够距离的氧离子; 或（iii）进行高能量，低剂量的氧注入，使得在含Si衬底中存在少量注入的氧化物。

公开(公告)号：US20040259334A1

公开(公告)日：2004-12-23

申请号：US10855915

申请日：2004-05-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Huajie Chen ,  Anthony G. Domenicucci ,  Keith E. Fogel ,  Richard J. Murphy ,  Devendra K. Sadana

IPC: H01L021/00

CPC classification number: H01L21/26506 ,  H01L21/324 ,  H01L21/7624 ,  H01L21/76254 ,  H01L29/1054

Abstract: A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to Ge diffusion. A heating step is then performed at a temperature that approaches the melting point of the final SiGe alloy and retards the formation of stacking fault defects while retaining Ge. The heating step permits interdiffusion of Ge throughout the first single crystal Si layer and the Ge-containing layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Moreover, because the heating step is carried out at a temperature that approaches the melting point of the final SiGe alloy, defects that persist in the single crystal SiGe layer as a result of relaxation are efficiently annihilated therefrom. In one embodiment, the heating step includes an oxidation process that is performed at a temperature from about 1230null to about 1320null C. for a time period of less than about 2 hours. This embodiment provides SGOI substrate that have minimal surface pitting and reduced crosshatching.

Abstract translation: 提供一种形成低缺陷，基本上松弛的绝缘体上硅衬底材料的方法。 该方法包括首先在耐Ge扩散的阻挡层上存在的第一单晶Si层的表面上形成含Ge层。 然后在接近最终SiGe合金的熔点的温度下进行加热步骤，并且在保留Ge的同时延缓层叠缺陷缺陷的形成。 加热步骤允许Ge遍及第一单晶Si层和含Ge层的相互扩散，从而在阻挡层顶部形成基本松弛的单晶SiGe层。 此外，由于加热步骤在接近最终SiGe合金的熔点的温度下进行，所以由于弛豫而在单晶SiGe层中持续存在的缺陷被有效地湮灭。 在一个实施方案中，加热步骤包括氧化过程，其在约1230℃至约1320℃的温度下进行约少于约2小时的时间。 该实施例提供具有最小表面点蚀和减少的交叉阴影的SGOI衬底。

公开(公告)号：US20040241459A1

公开(公告)日：2004-12-02

申请号：US10448947

申请日：2003-05-30

Applicant: International Business Machines Corporation

Inventor： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC: B32B009/04

CPC classification number: H01L21/76243 ,  H01L21/26506 ,  H01L21/76267 ,  Y10T428/12674 ,  Y10T428/12681

Abstract: A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implant rich region in the Si-containing substrate. The implant rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

Abstract translation: 提供了使用SIMOX和Ge相互扩散形成基本上松弛的，优质的绝缘体上硅衬底材料的方法。 该方法包括首先将离子注入到含Si衬底中以在含Si衬底中形成富含注入区的区域。 注入富含区域具有足够的离子浓度，使得在随后的高温退火期间，形成耐Ge扩散的阻挡层。 接下来，在含Si衬底的表面上形成Ge含有层，然后在允许形成阻挡层和Ge的相互扩散的温度下进行加热步骤，从而形成基本上松弛的单晶SiGe层 阻挡层顶部。

公开(公告)号：US20040012075A1

公开(公告)日：2004-01-22

申请号：US10196611

申请日：2002-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L21/76243 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02664 ,  Y10S438/933

Abstract: A method of forming a relaxed SiGe-on-insulator substrate having enhanced relaxation, significantly lower defect density and improved surface quality is provided. The method includes forming a SiGe alloy layer on a surface of a first single crystal Si layer. The first single crystal Si layer has an interface with an underlying barrier layer that is resistant to Ge diffusion. Next, ions that are capable of forming defects that allow mechanical decoupling at or near said interface are implanted into the structure and thereafter the structure including the implanted ions is subjected to a heating step which permits interdiffusion of Ge throughout the first single crystal Si layer and the SiGe layer to form a substantially relaxed, single crystal and homogeneous SiGe layer atop the barrier layer. SiGe-on-insulator substrates having the improved properties as well as heterostructures containing the same are also provided.

Abstract translation: 提供了一种形成松弛的绝缘体上硅衬底的方法，其具有增强的松弛，显着降低缺陷密度和改进的表面质量。 该方法包括在第一单晶Si层的表面上形成SiGe合金层。 第一单晶硅层具有与Ge扩散耐受的下层阻挡层的界面。 接下来，能够形成允许在界面处或附近机械解耦的缺陷的离子被注入到结构中，此后包括注入的离子的结构经受加热步骤，其允许Ge贯穿整个第一单晶Si层和 SiGe层，以形成在阻挡层顶上基本上松弛的单晶和均匀的SiGe层。 还提供了具有改进性能的绝缘体上硅衬底以及含有其的异质结构。

公开(公告)号：US20030199126A1

公开(公告)日：2003-10-23

申请号：US10128794

申请日：2002-04-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jack O. Chu ,  Feng-Yi Huang ,  Steven J. Koester ,  Devendra K. Sadana

IPC: H01L021/00 ,  H01L021/84 ,  H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/76243 ,  Y10S438/966 ,  Y10S438/967

Abstract: A method of fabricating high-quality, substantially relaxed SiGe-on-insulator substrate is provided by implanting oxygen into a Si/SiGe multilayer heterostructure which comprises alternating Si and SiGe layers. Specifically, the high quality, relaxed SiGe-on-insulator is formed by implanting oxygen ions into a multilayer heterostructure which includes alternating layers of Si and SiGe. Following, the implanting step, the multilayer heterostructure containing implanted oxygen ions is annealed, i.e., heated, so as to form a buried oxide region predominately within one of the Si layers of the multilayer structure.

Abstract translation: 通过将氧注入到包含交替的Si和SiGe层的Si / SiGe多层异质结构中来提供制造高质量，基本上松弛的绝缘体上硅衬底的方法。 具体地说，通过将氧离子注入到包括Si和SiGe的交替层的多层异质结构中，形成绝缘体上的高质量，轻松的SiGe。 接下来，注入步骤，将含有注入的氧离子的多层异质结构退火，即加热，以便主要形成多层结构的Si层之一内的掩埋氧化物区域。

公开(公告)号：US20020171106A1

公开(公告)日：2002-11-21

申请号：US09861594

申请日：2001-05-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Harold J. Hovel ,  Devendra K. Sadana

IPC: H01L027/01 ,  H01L027/12 ,  H01L031/0392 ,  H01L021/00 ,  H01L021/84

CPC classification number: H01L21/76243 ,  H01L27/1203

Abstract: A silicon-on-insulator substrate having improved thickness uniformity as well as a method of fabricating the same is provided. Specifically, improved thickness uniformity of a SOI substrate is obtained in the present invention by subjecting a bonded or SIMOX (separation by ion implantation of oxygen) SOI substrate to a high-temperature oxidation process that is capable of improving the thickness uniformity of said SOI substrate. During this high-temperature oxidation process surface oxidation of the superficial Si-containing (i.e., the Si-containing layer present atop the buried oxide (BOX) region) occurs; and (ii) internal thermal oxidation (ITOX), i.e., diffusion of oxygen via the superficial Si-containing layer into the interface that exists between the BOX and the superficial Si-containing layer also occurs. Uniformity is achieved since regions of the SOI substrate which have thicker Si get less ITOX, but more surface oxidation create a thicker surface oxide (and hence thinner superficial Si-containing layer). However, regions of the SOI substrate which are thinner get more ITOX and have thinner surface oxide (and hence thicker superficial Si-containing). This mechanism continues to self-adjust the SOI substrate thickness with oxidation time to improve the SOI thickness uniformity. It has been observed that the closer the oxidizing surface is to the BOX, the more uniform the superficial Si-containing layer becomes.

Abstract translation: 提供了具有改进的厚度均匀性的绝缘体上硅衬底及其制造方法。 具体地说，本发明通过使接合或SIMOX（通过离子注入氧的分离）SOI衬底进行能够提高所述SOI衬底的厚度均匀性的高温氧化工艺，从而获得SOI衬底的改善的厚度均匀性 。 在这种高温氧化过程中，发生表面含Si（即，存在于掩埋氧化物（BOX）区域顶部的含Si层）的表面氧化; 和（ii）内部热氧化（ITOX），即，通过表面的含Si层扩散到存在于BOX和表面含Si层之间的界面中也发生。 实现均匀性，因为具有较厚Si的SOI衬底的区域具有较少的ITOX，但是更多的表面氧化产生较厚的表面氧化物（因此更薄的表面含Si层）。 然而，更薄的SOI衬底的区域获得更多的ITOX并且具有更薄的表面氧化物（并且因此更厚的表面的含Si）。 该机制继续以氧化时间自调整SOI衬底厚度，以提高SOI厚度均匀性。 已经观察到，氧化表面越接近BOX，表面的含Si层变得越均匀。

公开(公告)号：US20020132395A1

公开(公告)日：2002-09-19

申请号：US09810236

申请日：2001-03-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Sundar K. Iyer ,  Devendra K. Sadana

IPC: H01L021/00

CPC classification number: H01L29/66772 ,  H01L21/743 ,  H01L21/76264 ,  H01L29/78612

Abstract: An SOI substrate contact is provided to the bodies of transistors fabricated in an SOI silicon wafer by selectively making the insulating layer below the bodies leaky. This is achieved by implanting below a set of transistor body locations a dose of ions having an energy such that the implanted region extends vertically through the buried insulator between the body and the wafer substrate, after which a voltage is applied sufficient to break down the oxide and establish a conductive path between the body and the substrate.

Abstract translation: 通过选择性地使绝缘层在主体下面泄漏，将SOI衬底接触提供到在SOI硅晶片中制造的晶体管的本体。 这通过在一组晶体管本体位置下注入一定量的具有能量的离子来实现，使得注入区域垂直延伸穿过本体和晶片衬底之间的掩埋绝缘体，之后施加足以分解氧化物的电压 并在主体和基板之间建立导电路径。

公开(公告)号：US20010033002A1

公开(公告)日：2001-10-25

申请号：US09861593

申请日：2001-05-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Maurice H. Norcott ,  Devendra K. Sadana

IPC: H01L021/00 ,  H01L021/84 ,  H01L021/8238 ,  H01L023/58 ,  H01L029/00

CPC classification number: H01L21/76243 ,  H01L21/26533

Abstract: A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy implantation steps uses at least one ion other than oxygen; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising a semiconductor substrate having a DIBOX region in patterned or unpatterned forms is also provided herein.

Abstract translation: 利用氧离子注入步骤在半导体衬底中制造缺陷诱导的掩埋氧化物（DIBOX）区域以产生稳定的缺陷区域的方法; 低能量注入步骤，以产生与所述稳定缺陷区相邻的非晶层，其中所述低能量注入步骤使用除氧以外的至少一种离子; 提供氧化和任选的退火。 本文还提供了包含具有图案化或未图案化形式的DIBOX区域的半导体衬底的绝缘体上硅（SOI）材料。