公开(公告)号：US20040265600A1

公开(公告)日：2004-12-30

申请号：US10732812

申请日：2003-12-11

发明人： Hideaki Machida

IPC分类号： B32B009/04

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B05D5/067 ,  B05D2401/90 ,  B82Y40/00 ,  C09D4/00 ,  C23C16/0272 ,  C23C16/18 ,  C23C18/1865 ,  C23C18/1882 ,  Y10T428/31663 ,  C08G77/30

摘要： An undercoat film that prevents copper diffusion and has excellent copper conductor film binding, even when thin. In addition, a material for forming a copper undercoat film, characterized by a compound represented by the general formula: (R1R2)Pnull(R)nnullSi (X1X2X3), wherein at least one of X1,X2 and X3 is a hydrolytic group, R1 and R2 are alkyl groups, R denotes a chain-form organic group formed from alkyl groups, aromatic rings or alkyl groups containing aromatic rings, and n is an integer from 1 to 6.

摘要翻译： 防止铜扩散并且具有优异的铜导体膜结合的底涂层，即使是薄的。 另外，用于形成铜底涂膜的材料，其特征在于由通式（R1R2）P-（R）n-Si（X1X2X3）表示的化合物，其中X1，X2和X3中的至少一个是水解 基团，R 1和R 2是烷基，R表示由烷基，芳环或含有芳环的烷基形成的链状有机基团，n为1〜6的整数。

公开(公告)号：US20040265593A1

公开(公告)日：2004-12-30

申请号：US10871003

申请日：2004-06-21

申请人： NITTO DENKO CORPORATION

发明人： Takashi Kamijo ,  Minoru Miyatake

IPC分类号： B32B009/04

CPC分类号： C08J5/18 ,  B29C55/00 ,  B29C70/62 ,  B29D7/01 ,  B29D11/00 ,  B29K2105/0079 ,  B29K2995/0034 ,  G02B5/3016 ,  Y10T428/31504

摘要： A method for manufacturing a polarizer comprising a film having a structure wherein a minute domain is dispersed in a matrix formed of a translucent water-soluble resin including an iodine light absorbing material, the method comprising the steps of: forming a film from a solution including the translucent water-soluble resin, iodine and a material forming the minute domain; and stretching the film. The obtained iodine based polarizer has a high polarization degree.

摘要翻译： 一种偏振片的制造方法，其特征在于，具有由微结构域分散在由包含碘吸光材料的半透明水溶性树脂构成的基体中的结构的膜，该方法包括以下步骤：从包含 半透明水溶性树脂，碘和形成微畴的材料; 并拉伸薄膜。 所得碘基偏振片具有高偏振度。

公开(公告)号：US20040253460A1

公开(公告)日：2004-12-16

申请号：US10857247

申请日：2004-05-28

发明人： Glenn McGall ,  Jonathan Eric Forman

IPC分类号： B32B009/04

CPC分类号： C08G73/0206 ,  C03C17/30 ,  C03C2218/113 ,  C07F7/1804 ,  C09D179/02 ,  C09D183/08 ,  C09D183/14 ,  Y10T428/31663

摘要： Provided are functionalized silicon compounds and methods for their synthesis and use. The functionalized silicon compounds include at least one activated silicon group and at least one derivatizable functional group. Exemplary derivatizable functional groups include hydroxyl, amino, carboxyl and thiol, as well as modified forms thereof, such as activated or protected forms. The functionalized silicon compounds may be covalently attached to surfaces to form functionalized surfaces which may be used in a wide range of different applications. In one embodiment, the silicon compounds are attached to the surface of a substrate comprising silica, such as a glass substrate, to provide a functionalized surface on the substrate, to which molecules, including polypeptides and nucleic acids, may be attached. In one embodiment, after covalent attachment of a functionalized silicon compound to the surface of a solid silica substrate to form a functionalized coating on the substrate, an array of nucleic acids may be covalently attached to the substrate. Thus, the method permits the formation of high density arrays of nucleic acids immobilized on a substrate, which may be used, for example, in conducting high volume nucleic acid hybridization assays.

公开(公告)号：US20040253458A1

公开(公告)日：2004-12-16

申请号：US10890108

申请日：2004-07-14

申请人： RENESAS TECHNOLOGY CORP.

发明人： Takuji Matsumoto ,  Toshiaki Iwamatsu

IPC分类号： B32B009/04

CPC分类号： H01L21/3226 ,  H01L21/76251 ,  H01L21/76259 ,  H01L29/16 ,  Y10T428/265

摘要： A semiconductor wafer includes an oxide film above a silicon layer, and a porous silicon layer which is located above the oxide film and serves as a gettering layer. Gettering of impurities from a silicon layer is not interrupted by the oxide film since the porous silicon layer is placed above the oxide film. The semiconductor wafer having the structure above can be produced by a bonding method. Bonding strength relative to the oxide film is ensured by placing a growth silicon layer between the oxide film and the porous silicon layer, compared with the case in which the oxide film and the porous silicon layer are directly bonded.

摘要翻译： 半导体晶片包括在硅层上方的氧化物膜和位于氧化物膜上方并用作吸杂层的多孔硅层。 由于多孔硅层位于氧化膜的上方，从硅层中除去杂质不会被氧化膜中断。 具有上述结构的半导体晶片可以通过接合方法制造。 与氧化膜和多孔硅层直接接合的情况相比，通过将生长硅层放置在氧化膜和多孔硅层之间来确保相对于氧化膜的结合强度。

公开(公告)号：US20040253457A1

公开(公告)日：2004-12-16

申请号：US10856028

申请日：2004-05-28

发明人： Habib Hichri ,  Kelly Malone ,  Arthur Martin

IPC分类号： B32B009/04

CPC分类号： H01L21/02203 ,  C08L71/00 ,  C09J179/08 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  Y02P20/544 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31721

摘要： A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.

公开(公告)号：US20040249069A1

公开(公告)日：2004-12-09

申请号：US10485117

申请日：2004-02-05

发明人： Yoshihiro Nakai ,  Takahiro Ikebe ,  Keiji Obata ,  Hideyuki Shigemitsu

IPC分类号： B32B027/36 ,  B32B009/04 ,  B32B015/04 ,  C08G063/48

CPC分类号： C08L51/003 ,  C08L51/04 ,  C08L51/085 ,  Y10T428/31507 ,  Y10T428/31663

摘要： The direct vapor depositing resin composition of the present invention comprises at least one selected from the group consisting of (A-I): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture to a complex rubber-like polymer (G) composed of a polyorganosiloxane and a (meth)acrylate-based polymer and (A-II): a graft copolymer obtained by graft-polymerizing one or more monomers or a monomer mixture including an alkyl(meth)acrylate as an essential component to a rubber-like polymer (R) in which the content of diene units is 30% by weight or less in 100% by weight of the whole rubber-like polymer. The direct vapor depositing resin composition of the present invention can provide a beautiful bright appearance after direct vapor deposition of a metal, further, has high level mechanical strengths such as impact strength and the like, and weather resistance, and is also excellent in hot plate welding property with a transparent resin such as PMMA resins, PC resins and the like.

摘要翻译： 本发明的直接气相沉积树脂组合物包括选自（AI）中的至少一种：通过将一种或多种单体或单体混合物接枝聚合到复合橡胶状聚合物（G）而获得的接枝共聚物， 由聚有机硅氧烷和（甲基）丙烯酸酯类聚合物组成的（A-II）：将一种或多种单体或包含（甲基）丙烯酸烷基酯作为主要成分的单体混合物接枝聚合得到的接枝共聚物， 类聚合物（R），其中二烯单元的含量在全部橡胶状聚合物的100重量％中为30重量％以下。 本发明的直接气相沉积树脂组合物可以在金属的直接气相沉积之后提供美观的外观，而且还具有诸如冲击强度等的高水平的机械强度和耐候性，并且在热板上也是优异的 使用透明树脂如PMMA树脂，PC树脂等进行焊接。

公开(公告)号：US20040247897A1

公开(公告)日：2004-12-09

申请号：US10484215

申请日：2004-07-23

发明人： Hans-Joachim Quenzer ,  Arne Veit Schulz

IPC分类号： B32B009/04 ,  C01B033/14

CPC分类号： C23C18/1212 ,  C03C1/008 ,  C23C18/1254 ,  C23C18/1279 ,  Y10T428/31663

摘要： Disclosed is a sol solution and a method for producing this sol solution, which serves as a coating agent for producing glass coatings for electrically conductive materials that can be used in anodic bonding. The sol solution is a mix of an organosol consisting of SiO2 dissolved in at least one n-alkanol or a mixture of a multiplicity of n-alkanols, a tetraethyl orthosilicate (TEOS) and/or a triethoxy silane or a trimethoxy silane as well as an acid or a base and water and the mixture being partially polymerized. The sol mixture is distinguished in that the mix contains an alkali alcoholate.

摘要翻译： 公开了一种溶胶溶液和该溶胶溶液的制造方法，其用作可用于阳极结合的导电材料用玻璃涂层的涂布剂。 溶胶溶液是由溶解在至少一种正链烷醇中的SiO 2或多个正构烷醇，原硅酸四乙酯（TEOS）和/或三乙氧基硅烷或三甲氧基硅烷的混合物组成的有机溶胶的混合物，以及 酸或碱和水，并且该混合物部分聚合。 溶胶混合物的区别在于混合物含有碱性醇化物。

公开(公告)号：US20040247878A1

公开(公告)日：2004-12-09

申请号：US10487218

申请日：2004-02-19

发明人： Yoshihiko Imanaka ,  Shunsuke Kajiwara ,  Tatsuya Ekinaka ,  Toshio Kita ,  Takehiro Suga ,  Ryou Niimi ,  Isao Sogou

IPC分类号： B32B009/04

CPC分类号： C08J7/042 ,  B32B27/08 ,  B32B2369/00 ,  C08G77/04 ,  C08G77/14 ,  C08G77/20 ,  C08G77/26 ,  C08J2369/00 ,  C08J2433/04 ,  C08J2483/04 ,  C08K3/013 ,  C08K5/0041 ,  C08L83/04 ,  Y10T428/24364 ,  Y10T428/31504 ,  Y10T428/31507 ,  Y10T428/31598 ,  Y10T428/31663

摘要： A laminate which is excellent in appearance, adhesion, scratch resistance, abrasion resistance and hot water resistance and has a high level of weatherability and excellent durability, and an acrylic resin composition and an organosiloxane resin composition both of which can be used for the manufacture of the above laminate and have excellent storage stability. The laminate comprises a polycarbonate substrate, a first layer formed on the surface of the polycarbonate substrate, and a second layer formed on the surface of the first layer, wherein the first layer is composed of a crosslinked acrylic copolymer and an ultraviolet light absorber, and the second layer is composed of a crosslinked organosiloxane polymer; and the crosslinked acrylic copolymer comprises specific recurring units and an urethane bond in a specific ratio, and the organosiloxane polymer has a specific structure composed of colloidal silica and alkoxysilanes.

摘要翻译： 具有外观，粘合性，耐擦伤性，耐磨性和耐热水性优异，耐候性高，耐久性优异的层压体，丙烯酸树脂组合物和有机硅氧烷树脂组合物均可用于制造 上述层压板具有优良的储存稳定性。 层压体包括聚碳酸酯基材，形成在聚碳酸酯基材的表面上的第一层和形成在第一层的表面上的第二层，其中第一层由交联的丙烯酸共聚物和紫外线吸收剂构成，以及 第二层由交联的有机硅氧烷聚合物组成; 所述交联丙烯酸系共聚物以特定比例含有特定的重复单元和氨基甲酸酯键，所述有机硅氧烷聚合物具有由胶体二氧化硅和烷氧基硅烷构成的特定结构。

公开(公告)号：US20040241468A1

公开(公告)日：2004-12-02

申请号：US10855430

申请日：2004-05-28

发明人： Ryoji Otaki

IPC分类号： B32B009/04 ,  B32B027/08 ,  B32B027/34 ,  C08L077/00

CPC分类号： B32B27/34 ,  B32B27/08 ,  B32B2250/24 ,  B32B2307/724 ,  B32B2439/00 ,  B65D81/266 ,  C08G69/26 ,  C08K5/098 ,  Y10T428/31725 ,  C08L77/00

摘要： In the present invention, a masterbatch is produced by melt-mixing a metal compound (B) with a reactive thermoplastic resin (C). The oxidizable polyamide (A) is produced by polycondensing a diamine component containing m-xylylenediamine in an amount of 70 mol % or higher with a dicarboxylic acid component containing adipic acid in an amount of 50 mol % or higher. The metal compound (B) contains at least one metal selected from the group consisting of transition metals in group VIII of the periodic table, manganese, copper and zinc. The reactive thermoplastic resin (C) has an internal bond and/or a reactive functional group which are reactive with an amide bond and/or a reactive functional group of the oxidizable polyamide (A). The masterbatch exhibits a stable moldability. The masterbatch is melt-mixed with an oxidizable polyamide (A) and formed into a molded article which exhibits an excellent oxygen-absorbing ability irrespective of the preservation conditions of the masterbatch.

摘要翻译： 在本发明中，通过将金属化合物（B）与反应性热塑性树脂（C）熔融混合来制备母料。 可氧化聚酰胺（A）通过将含有70摩尔％以上的间苯二甲胺的二胺成分与含有50摩尔％以上的己二酸的二羧酸成分进行缩聚来制造。 金属化合物（B）含有选自元素周期表第Ⅷ族中的过渡金属，锰，铜和锌中的至少一种金属。 反应性热塑性树脂（C）具有与可氧化聚酰胺（A）的酰胺键和/或反应性官能团反应的内部键和/或反应性官能团。 母粒表现出稳定的成型性。 将母料与可氧化聚酰胺（A）熔融混合并形成成型制品，其与母料的保存条件无关，其具有优异的氧吸收能力。

公开(公告)号：US20040241459A1

公开(公告)日：2004-12-02

申请号：US10448947

申请日：2003-05-30

申请人： International Business Machines Corporation

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC分类号： B32B009/04

CPC分类号： H01L21/76243 ,  H01L21/26506 ,  H01L21/76267 ,  Y10T428/12674 ,  Y10T428/12681

摘要： A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implant rich region in the Si-containing substrate. The implant rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

摘要翻译： 提供了使用SIMOX和Ge相互扩散形成基本上松弛的，优质的绝缘体上硅衬底材料的方法。 该方法包括首先将离子注入到含Si衬底中以在含Si衬底中形成富含注入区的区域。 注入富含区域具有足够的离子浓度，使得在随后的高温退火期间，形成耐Ge扩散的阻挡层。 接下来，在含Si衬底的表面上形成Ge含有层，然后在允许形成阻挡层和Ge的相互扩散的温度下进行加热步骤，从而形成基本上松弛的单晶SiGe层 阻挡层顶部。