公开(公告)号：US20160322419A1

公开(公告)日：2016-11-03

申请号：US14699015

申请日：2015-04-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  John C.S. HALL ,  Marwan H. KHATER ,  Edward W. KIEWRA ,  Steven M. SHANK

IPC: H01L27/146

CPC classification number: H01L31/202 ,  H01L21/02667 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/14698 ,  H01L31/0203 ,  H01L31/028 ,  H01L31/208

Abstract: Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.

Abstract translation: 提供光电检测器结构和制造方法。 该方法包括形成底物上形成的检测器材料的底切。 该方法还包括将检测器封装以形成来自底切的气隙。 该方法还包括退火检测器材料，导致检测器材料膨胀到气隙中。

公开(公告)号：US20160018677A1

公开(公告)日：2016-01-21

申请号：US14332886

申请日：2014-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  William M. GREEN ,  Michael J. HAUSER ,  Edward W. KIEWRA ,  Xuefeng LIU ,  Steven M. SHANK

IPC: G02F1/025 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/40 ,  G02B6/136 ,  H01L29/49 ,  H01L27/088 ,  H01L21/306 ,  H01L29/66 ,  H01L27/06 ,  H01L29/78 ,  H01L29/06

CPC classification number: G02F1/025 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01L21/30604 ,  H01L27/0617 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/4916 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7823 ,  H01L29/7824 ,  H01L29/78624

Abstract: A device includes a laterally diffused metal-oxide-semiconductor (LDMOS) device integrated with an optical modulator. An optical waveguide of the optical modulator includes a silicon-containing structure in a drift region of the LDMOS device.

Abstract translation: 一种器件包括与光学调制器集成的横向扩散的金属氧化物半导体（LDMOS）器件。 光调制器的光波导包括在LDMOS器件的漂移区域中的含硅结构。