公开(公告)号：US20160018677A1

公开(公告)日：2016-01-21

申请号：US14332886

申请日：2014-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  William M. GREEN ,  Michael J. HAUSER ,  Edward W. KIEWRA ,  Xuefeng LIU ,  Steven M. SHANK

IPC: G02F1/025 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/40 ,  G02B6/136 ,  H01L29/49 ,  H01L27/088 ,  H01L21/306 ,  H01L29/66 ,  H01L27/06 ,  H01L29/78 ,  H01L29/06

CPC classification number: G02F1/025 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01L21/30604 ,  H01L27/0617 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42356 ,  H01L29/4916 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7823 ,  H01L29/7824 ,  H01L29/78624

Abstract: A device includes a laterally diffused metal-oxide-semiconductor (LDMOS) device integrated with an optical modulator. An optical waveguide of the optical modulator includes a silicon-containing structure in a drift region of the LDMOS device.

Abstract translation: 一种器件包括与光学调制器集成的横向扩散的金属氧化物半导体（LDMOS）器件。 光调制器的光波导包括在LDMOS器件的漂移区域中的含硅结构。

公开(公告)号：US20200119093A1

公开(公告)日：2020-04-16

申请号：US16159798

申请日：2018-10-15

Applicant: International Business Machines Corporation

Inventor： Praveen JOSEPH ,  Xuefeng LIU ,  Gauri KARVE ,  Eric Raymond EVARTS

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: A MRAM-TFT unit cell and a method for fabricating the same. The MRAM-TFT unit cell includes a MRAM device and a TFT device electrically coupled to the MRAM device. The MRAM device and the TFT device are situated within a common plane of the MRAM-TFT cell. The method includes forming a TFT device comprising a source/drain region, and a semiconducting layer on a substrate. A magnetic tunnel junction stack (MTJ) is formed in contact with the source region. A first contact is formed on the MTJ, and a second contact is formed on the drain region. A first interconnect metal layer is formed in contact with the first contact, and a second first interconnect metal layer is formed in contact with the second contact. A third contact is formed on a gate region of the TFT device. A third interconnect metal layer is formed in contact with the third contact.

公开(公告)号：US20130134566A1

公开(公告)日：2013-05-30

申请号：US13748662

申请日：2013-01-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Hanyi DING ,  Kai D. FENG ,  Zhong-Xiang HE ,  Xuefeng LIU

IPC: H01L23/552

CPC classification number: H01L23/552 ,  H01L21/76 ,  H01L21/76264 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.