公开(公告)号：US5997704A

公开(公告)日：1999-12-07

申请号：US962678

申请日：1997-11-03

申请人： Ichirou Shiono ,  Kazuo Watanabe ,  Hitoshi Maruyama ,  Akifumi Mishima ,  Satoru Mori ,  Jun-ichi Oda

发明人： Ichirou Shiono ,  Kazuo Watanabe ,  Hitoshi Maruyama ,  Akifumi Mishima ,  Satoru Mori ,  Jun-ichi Oda

IPC分类号： C01G23/00 ,  B24B7/19 ,  C04B41/91 ,  C23C14/08 ,  C23C14/34 ,  H01B3/12 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  C23C14/00 ,  B24B1/00 ,  B24B7/30

CPC分类号： H01J37/3426 ,  B24B7/19 ,  C23C14/3414 ,  H01J37/3491

摘要： The present invention provides sputtering targets which are useful for depositing ferroelectric films and are resistant to crack generation during sputtering. The sputtering targets comprise a disk target which is formed using a sintered material including a compound oxide of Ba and Ti, Sr and Ti, or Ba, Sr and Ti, and which has a surface which has been subjected to grinding, wherein the scratches 4 formed on the surface of the disk target due to grinding have a pattern radiating from an arbitrary point on the plane of the surface of said disk target.

摘要翻译： 本发明提供了可用于沉积铁电体膜并且在溅射期间耐裂纹产生的溅射靶。 溅射靶包括使用包含Ba和Ti，Sr和Ti或Ba，Sr和Ti的复合氧化物的烧结材料形成的圆盘靶，并且具有经过研磨的表面，其中划痕4 由于磨削而形成在盘对象的表面上的图案具有从所述盘片的表面的平面上的任意点辐射的图案。

公开(公告)号：US08502285B2

公开(公告)日：2013-08-06

申请号：US12737797

申请日：2009-09-24

申请人： Satoru Mori ,  Shozo Komiyama

发明人： Satoru Mori ,  Shozo Komiyama

IPC分类号： H01L29/786

CPC分类号： H01L29/458 ,  H01L29/66765 ,  H01L29/78621

摘要： This thin-film transistor includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer. One aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. Another aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.

摘要翻译： 该薄膜晶体管包括漏电极膜和源极电极膜，它们都包括复合铜合金膜，该复合铜合金膜包括形成为与阻挡膜接触的铜合金底层和形成的Cu层 在铜合金底层上。 铜合金底层的一个方面包括含有2mol％至30mol％的Ca，20mol％至50mol％的氧以及Cu和不可避免的杂质作为余量的浓缩层。 铜合金底层的另一方面包括含有2摩尔％至30摩尔％的Ca，1摩尔％至10摩尔％的浓度的浓缩层，其中选自由Al，Sn和Sb组成的组中的一种或多种，​​20mol 50％摩尔的氧，以及Cu和不可避免的杂质作为天平。

公开(公告)号：US20110309444A1

公开(公告)日：2011-12-22

申请号：US13138159

申请日：2009-10-22

申请人： Kazunari Maki ,  Kenichi Yaguchi ,  Yosuke Nakasato ,  Satoru Mori

发明人： Kazunari Maki ,  Kenichi Yaguchi ,  Yosuke Nakasato ,  Satoru Mori

IPC分类号： H01L29/772

CPC分类号： H01L29/458 ,  C22C9/01 ,  C23C14/165 ,  C23C14/3414 ,  H01L29/4908 ,  H01L29/66765

摘要： This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

摘要翻译： 该Cu合金溅射靶的原子百分比：Al：1〜10％ Ca：0.1〜2％，余量为Cu和1％以下不可避免的杂质。 该薄膜晶体管包括：通过粘合层接合到玻璃基板的表面的栅电极层; 栅极绝缘层; Si半导体层; n型Si半导体层; 阻挡层; 由漏极电极层和源电极层构成的导线层，两者都相互分开; 钝化层; 以及透明电极层，其中通过使用Cu合金溅射靶在氧化气氛下通过溅射形成阻挡层。

公开(公告)号：US5124311A

公开(公告)日：1992-06-23

申请号：US362466

申请日：1989-05-30

申请人： Satoru Mori ,  Hideaki Yoshida ,  Takuo Takeshita ,  Yoshio Kanda

发明人： Satoru Mori ,  Hideaki Yoshida ,  Takuo Takeshita ,  Yoshio Kanda

IPC分类号： H01L23/498 ,  H01L39/24

CPC分类号： H01L39/247 ,  H01L23/49888 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704 ,  Y10T428/24917 ,  Y10T428/31678 ,  Y10T428/31692

摘要： There is disclosed the structure of a superconductive wiring fabricated on an insulating substrate comprising a conductive pattern having at least one wiring strip of a superconductive ceramic formed on the insulating substrate and a protective film covering the wiring pattern and formed of a basic oxide, the basic oxide hardly reacts with the superconductive ceramic because of the fact that most of the superconductive ceramics are bases, then the wiring strip is allowed to stay in the superconductive state for a prolonged period of time.

公开(公告)号：US07250042B2

公开(公告)日：2007-07-31

申请号：US10761806

申请日：2004-01-22

申请人： Yuichi Kataishi ,  Satoru Mori ,  Yoshihiko Sano ,  Toshihiro Kikuchi ,  Takaaki Isshiki

发明人： Yuichi Kataishi ,  Satoru Mori ,  Yoshihiko Sano ,  Toshihiro Kikuchi ,  Takaaki Isshiki

IPC分类号： A61M25/00

CPC分类号： A61B17/3207 ,  A61B17/22 ,  A61B90/39 ,  A61B2017/22039 ,  A61B2217/005 ,  A61M1/008 ,  A61M25/0029 ,  A61M25/0032 ,  A61M25/0068 ,  A61M25/008

摘要： A thrombus suction catheter which is a tube having a distal end opening formed by an angled cut surface. In the distal end opening, at least a part on the proximal end side of the cut surface is formed in a concave shape in an angled direction, and the distal end side of the cut surface is formed to be flat and flexible. With the distal end configuration, suction and crossing are significantly improved.

摘要翻译： 一种血栓抽吸导管，其是具有由倾斜切割表面形成的远端开口的管。 在前端开口中，切割面的基端侧的至少一部分在成角度的方向上形成为凹形，并且切割面的前端侧形成为平坦且柔软的。 通过远端构造，抽吸和交叉显着改善。

公开(公告)号：USD540468S1

公开(公告)日：2007-04-10

申请号：US29237266

申请日：2005-08-30

申请人： Satoru Mori

设计人： Satoru Mori

公开(公告)号：US20070053786A1

公开(公告)日：2007-03-08

申请号：US10572216

申请日：2004-09-08

申请人： Sohei Nonaka ,  Kei Kinoshita ,  Satoru Mori

发明人： Sohei Nonaka ,  Kei Kinoshita ,  Satoru Mori

IPC分类号： C22C28/00

CPC分类号： C23C14/14 ,  C23C14/3414 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625

摘要： A phase change film for a semiconductor nonvolatile memory and a sputtering target for forming the phase change film. The phase change film for a semiconductor nonvolatile memory and the sputtering target for forming the phase change film have a composition containing 10 to 25 atomic % of Ge, 10 to 25 atomic % of Sb, 1 to 10 atomic % of Ga, and 10 atomic % or less of B, Al, C, Si and lanthanoid elements, with the balance being Te and inevitable impurities.

摘要翻译： 用于半导体非易失性存储器的相变膜和用于形成相变膜的溅射靶。 用于半导体非易失性存储器的相变膜和用于形成相变膜的溅射靶具有包含10至25原子％的Ge，10至25原子％的Sb，1至10原子％的Ga和10原子的组成 B，Al，C，Si和镧系元素的％以下，余量为Te和不可避免的杂质。

公开(公告)号：US08147427B2

公开(公告)日：2012-04-03

申请号：US12661665

申请日：2010-03-22

申请人： Shinsuke Nanto ,  Satoru Mori

发明人： Shinsuke Nanto ,  Satoru Mori

IPC分类号： A61M25/00

CPC分类号： A61M25/01 ,  A61M25/0067 ,  A61M25/0069 ,  A61M25/09 ,  A61M25/09041 ,  A61M2025/0183 ,  A61M2025/0188 ,  A61M2025/09116 ,  G06Q20/20 ,  G06Q20/209

摘要： To provide a means capable easily releasing twist of two or more guidewires passed through a guiding catheter without pulling out the guidewires. A twist releasing apparatus has a shaft, a first tube formed at the tip of the shaft and has a first lumen through which two or more guidewires can be passed, a second tube disposed through a gap at the tip side in the axis direction relative to the first tube and has a second lumen through the two or more guidewires can be passed, and a connection portion for connecting the first tube and the second tube so that the two or more guidewires can be passed through the first lumen and the second lumen. The second tube has a slit that is formed in an axis direction and can be elastically deformed. The connection portion can be elastically deformed into a curved shape in the axis direction.

摘要翻译： 提供能够容易地释放通过导向导管而不拉出导线的两根或多根导线的扭转的装置。 扭转释放装置具有轴，第一管形成在所述轴的尖端处，并且具有第一管腔，通过所述第一管腔可以通过两个或更多个引导线;第二管，其相对于所述轴线方向设置在所述尖端侧的轴向方向上的间隙 可以通过第一管并且具有通过两个或更多个导丝的第二管腔，以及用于连接第一管和第二管的连接部分，使得两个或更多个导丝可以穿过第一管腔和第二管腔。 第二管具有沿轴向形成并且可以弹性变形的狭缝。 连接部能够在轴向上弹性变形为弯曲形状。

公开(公告)号：US20100286565A1

公开(公告)日：2010-11-11

申请号：US12661665

申请日：2010-03-22

申请人： Shinsuke Nanto ,  Satoru Mori

发明人： Shinsuke Nanto ,  Satoru Mori

IPC分类号： A61M25/09

CPC分类号： A61M25/01 ,  A61M25/0067 ,  A61M25/0069 ,  A61M25/09 ,  A61M25/09041 ,  A61M2025/0183 ,  A61M2025/0188 ,  A61M2025/09116 ,  G06Q20/20 ,  G06Q20/209

摘要： To provide a means capable easily releasing twist of two or more guidewires passed through a guiding catheter without pulling out the guidewires. A twist releasing apparatus has a shaft, a first tube formed at the tip of the shaft and has a first lumen through which two or more guidewires can be passed, a second tube disposed through a gap at the tip side in the axis direction relative to the first tube and has a second lumen through the two or more guidewires can be passed, and a connection portion for connecting the first tube and the second tube so that the two or more guidewires can be passed through the first lumen and the second lumen. The second tube has a slit that is formed in an axis direction and can be elastically deformed. The connection portion can be elastically deformed into a curved shape in the axis direction.

摘要翻译： 提供能够容易地释放通过导向导管而不拉出导线的两根或多根导线的扭转的装置。 扭转释放装置具有轴，第一管形成在所述轴的尖端处，并且具有第一管腔，通过所述第一管腔可以通过两个或更多个引导线;第二管，其相对于所述轴线方向设置在所述尖端侧的轴向方向上的间隙 可以通过第一管并且具有通过两个或更多个导丝的第二管腔，以及用于连接第一管和第二管的连接部分，使得两个或更多个导丝可以穿过第一管腔和第二管腔。 第二管具有沿轴向形成并且可以弹性变形的狭缝。 连接部能够在轴向上弹性变形为弯曲形状。

公开(公告)号：USD540467S1

公开(公告)日：2007-04-10

申请号：US29237265

申请日：2005-08-30

申请人： Satoru Mori

设计人： Satoru Mori