公开(公告)号：US5997704A

公开(公告)日：1999-12-07

申请号：US962678

申请日：1997-11-03

申请人： Ichirou Shiono ,  Kazuo Watanabe ,  Hitoshi Maruyama ,  Akifumi Mishima ,  Satoru Mori ,  Jun-ichi Oda

发明人： Ichirou Shiono ,  Kazuo Watanabe ,  Hitoshi Maruyama ,  Akifumi Mishima ,  Satoru Mori ,  Jun-ichi Oda

IPC分类号： C01G23/00 ,  B24B7/19 ,  C04B41/91 ,  C23C14/08 ,  C23C14/34 ,  H01B3/12 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  C23C14/00 ,  B24B1/00 ,  B24B7/30

CPC分类号： H01J37/3426 ,  B24B7/19 ,  C23C14/3414 ,  H01J37/3491

摘要： The present invention provides sputtering targets which are useful for depositing ferroelectric films and are resistant to crack generation during sputtering. The sputtering targets comprise a disk target which is formed using a sintered material including a compound oxide of Ba and Ti, Sr and Ti, or Ba, Sr and Ti, and which has a surface which has been subjected to grinding, wherein the scratches 4 formed on the surface of the disk target due to grinding have a pattern radiating from an arbitrary point on the plane of the surface of said disk target.

摘要翻译： 本发明提供了可用于沉积铁电体膜并且在溅射期间耐裂纹产生的溅射靶。 溅射靶包括使用包含Ba和Ti，Sr和Ti或Ba，Sr和Ti的复合氧化物的烧结材料形成的圆盘靶，并且具有经过研磨的表面，其中划痕4 由于磨削而形成在盘对象的表面上的图案具有从所述盘片的表面的平面上的任意点辐射的图案。

公开(公告)号：US06176986B1

公开(公告)日：2001-01-23

申请号：US08863194

申请日：1997-05-27

申请人： Kazuo Watanabe ,  Akifumi Mishima

发明人： Kazuo Watanabe ,  Akifumi Mishima

IPC分类号： C23C1434

CPC分类号： C23C14/3414 ,  C04B35/465 ,  H01L21/31691

摘要： A dielectric sputtering target of high strength comprising a sintered barium, strontium titanate body, which is oxygen deficient, of the formula: Ba1-xSrxTiO3-y, wherein 0

摘要翻译： 一种高强度的电介质溅射靶，其特征在于，其中0

公开(公告)号：US08466077B2

公开(公告)日：2013-06-18

申请号：US12733429

申请日：2008-09-05

申请人： Shoubin Zhang ,  Akifumi Mishima

发明人： Shoubin Zhang ,  Akifumi Mishima

IPC分类号： C04B35/486

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/12 ,  C04B35/44 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C23C14/086 ,  G11B7/24 ,  G11B7/2578 ,  G11B7/266 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715

摘要： A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

摘要翻译： 用于形成用于光学存储介质的ZrO 2 -In 2 O 3基保护膜的溅射靶具有由ZraInbAcO100-abc制成的组分组成，其中“A”表示Si，Cr，Al，Ce，Ti和 Sn，“a”表示大于5原子％且小于23原子％的量，“b”表示大于12原子％且小于35原子％的量，“c”表示大于0原子％ 30原子％以上，其中包含在用于形成光存储介质保护膜的溅射靶中的Zr的90％以上是组成Zr和In的氧化物相，分散在基材中 的目标。

公开(公告)号：US08815149B2

公开(公告)日：2014-08-26

申请号：US12093011

申请日：2006-12-28

申请人： Shozo Komiyama ,  Gou Yamaguchi ,  Akifumi Mishima

发明人： Shozo Komiyama ,  Gou Yamaguchi ,  Akifumi Mishima

IPC分类号： C22C5/08 ,  C22C5/06 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C22C5/06 ,  C22C5/08 ,  C22F1/14 ,  C23C14/205 ,  G11B7/2534 ,  G11B7/259 ,  G11B7/266

摘要： A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.

摘要翻译： 一种用于光学记录介质的半反射膜和反射膜，其由具有0.001至0.1质量％的Ca，0.05至1质量％的Mg，以及其余含有Ag的组成的银合金制成， 不可避免的杂质和由0.001〜0.1质量％的Ca，0.05〜1质量％的Mg组成的银合金，余量含有Ag和不可避免的杂质的靶; 以及由具有0.05〜1质量％的Mg，0.05〜1质量％的Eu，Pr，Ce中的一种或多种的组成的银合金构成的光记录介质用半反射膜，以及 Sm和其余含有Ag和不可避免的杂质的Ag合金溅射靶，以及用于形成用于光学记录介质的半反射膜的Ag合金溅射靶，其由具有由0.05至1质量％的Mg组成的银合金制成 ，0.05〜1质量％的Eu，Pr，Ce和Sm中的一种或多种，​​剩余部分含有Ag和不可避免的杂质。

公开(公告)号：US08254753B2

公开(公告)日：2012-08-28

申请号：US11412692

申请日：2006-04-27

申请人： Hiroshi Nakano ,  Hiroyasu Furuse ,  Yoshihisa Gonno ,  Akifumi Mishima ,  Tsutomu Yamamoto

发明人： Hiroshi Nakano ,  Hiroyasu Furuse ,  Yoshihisa Gonno ,  Akifumi Mishima ,  Tsutomu Yamamoto

IPC分类号： H04N9/82

CPC分类号： G11B27/034 ,  G11B27/105 ,  H04N9/8063 ,  H04N9/8233 ,  H04N21/4884

摘要： For generation of a subtitle in a digital movie screening system, it is essential to reduce the burden of processing the subtitle when screening a movie. There is provided a subtitle generating apparatus destined for use in a digital movie screening system, the subtitle generating apparatus, which includes a storage unit having a movie subtitle file stored therein, a controller to generate an internal file on the basis of the subtitle file, and a subtitle processor to decode the internal file for generating a subtitle and combine the subtitle and a movie picture with each other, the subtitle file consisting of a main file in which there are described information identifying a file of text data representing characters to be displayed as a subtitle of a movie and a file of image data representing the content of an image displayed as the movie subtitle along with control data for displaying the subtitle, one or more font files including font data on the text data, and one or more image files including the image data, the internal file being an integration of the main, font and image files, made by combining the described content of the main file with the substantive data of the font and image files, and the controller generating the internal file from the subtitle file prior to displaying the movie.

摘要翻译： 为了在数字电影放映系统中产生副标题，必须减少在筛选电影时处理字幕的负担。 提供了一种旨在用于数字电影放映系统的字幕产生装置，该字幕产生装置包括一个其中存储有电影字幕文件的存储单元，一个控制器，用于根据字幕文件生成一个内部文件， 以及字幕处理器，用于对内部文件进行解码以产生字幕，并将字幕和电影画面相互组合，该字幕文件由主文件组成，其中描述了标识要显示的字符的文本数据的文件的信息 作为电影的副标题和表示作为电影字幕显示的图像的内容的图像数据的文件以及用于显示字幕的控制数据，包括文本数据上的字体数据的一个或多个字体文件和一个或多个图像 包括图像数据的文件，内部文件是通过组合所述内容的主要，字体和图像文件的集成 n文件，其具有字体和图像文件的实质数据，以及控制器在显示电影之前从副标题文件生成内部文件。

公开(公告)号：US20100206725A1

公开(公告)日：2010-08-19

申请号：US12733429

申请日：2008-09-05

申请人： Shoubin Zhang ,  Akifumi Mishima

发明人： Shoubin Zhang ,  Akifumi Mishima

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/12 ,  C04B35/44 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5436 ,  C04B2235/5445 ,  C23C14/086 ,  G11B7/24 ,  G11B7/2578 ,  G11B7/266 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715

摘要： A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

摘要翻译： 用于形成用于光学存储介质的ZrO 2 -In 2 O 3基保护膜的溅射靶具有由ZraInbAcO100-abc制成的组分组成，其中“A”表示Si，Cr，Al，Ce，Ti和 Sn，“a”表示大于5原子％且小于23原子％的量，“b”表示大于12原子％且小于35原子％的量，“c”表示大于0原子％ 30原子％以上，其中包含在用于形成光存储介质保护膜的溅射靶中的Zr的90％以上是组成Zr和In的氧化物相，分散在基材中 的目标。

公开(公告)号：US20080304999A1

公开(公告)日：2008-12-11

申请号：US12094167

申请日：2005-11-29

申请人： Masayuki Ishikawa ,  Masayoshi Kohinata ,  Akifumi Mishima

发明人： Masayuki Ishikawa ,  Masayoshi Kohinata ,  Akifumi Mishima

IPC分类号： B23K1/19 ,  C22C5/02

CPC分类号： C22C5/02 ,  B23K35/3013 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1131 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2224/0401

摘要： An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The An Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.

摘要翻译： 提供不包括大空隙的Au-Sn合金凸块及其制造方法。 不包含大空隙的Au-Sn合金凸块包括含有Sn：20.5〜23.5质量％，余量为Au和不可避免的杂质的组成以及富含Sn的一次结晶相的0.5〜30面积％的结构 在矩阵中。

公开(公告)号：US06393418B1

公开(公告)日：2002-05-21

申请号：US09477508

申请日：2000-01-04

申请人： Jun Hikita ,  Akifumi Mishima

发明人： Jun Hikita ,  Akifumi Mishima

IPC分类号： G06F1730

CPC分类号： G06F17/30067 ,  Y10S707/99937 ,  Y10S707/99943 ,  Y10S707/99953

摘要： The invention is equipped with setting means for setting whether files under the same custody structure are preferentially selected, procuring means for procuring information on a day on which the last access was made and information on the file size regarding each one of the respective files stored in the memory means, calculating means for calculating a score regarding each of the respective files according to the number of days that have lapsed from the day of the last access and the file size, and selecting means for selecting a desired file from among the respective files by using the score and the result of the setting performed by the setting means. With this construction, when in the computer of hierarchy storage management type collectively replacing a file within the buffer memory with a file that is newly transferred from the main memory, it is so arranged that a plurality of files under the same directory can be collectively replaced.

摘要翻译： 本发明装备有用于设置是否优先选择在相同保管结构下的文件的设置装置，用于在最后访问的当天获取信息的采购装置和关于存储在每个文件中的每个文件的文件大小的信息 存储装置，用于根据从最后访问的日期起经过的天数和文件大小来计算关于每个相应文件的分数的计算装置，以及用于从各个文件中选择所需文件的选择装置 通过使用由设定装置执行的分数和结果。 利用这种结构，当在层次式存储管理类型的计算机中，用从主存储器新传送的文件共同地替换缓冲存储器内的文件时，可以将同一目录下的多个文件集中地替换 。

公开(公告)号：US5338425A

公开(公告)日：1994-08-16

申请号：US904571

申请日：1992-06-26

申请人： Akifumi Mishima ,  Munenori Mashima ,  Jun Tamura

发明人： Akifumi Mishima ,  Munenori Mashima ,  Jun Tamura

IPC分类号： C23C4/00 ,  C23C4/02 ,  C23C4/12 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C23C4/02 ,  C23C4/12

摘要： The present invention relates to a target unit including a basic body and a target layer mainly comprising Si alloy disposed on an outer peripheral surface of the basic body by a hard-facing method. A target unit in accordance with the present invention has an interposed layer between a basic body and a target layer, in which one side thereof is strongly attached to a peripheral surface of the basic body, while other side thereof is strongly attached to an inner surface of the target layer. Also, a method in accordance with the present invention comprises the steps of: preparing a basic body in the form of a cylinder; applying an interposed layer on a peripheral surface of said basic body by means of hard-facing; and further applying a target layer on a peripheral surface of said interposed layer by means of hard-facing.

摘要翻译： 本发明涉及一种目标单元，其包括基本体和主要包含通过硬面方法设置在基体的外周表面上的Si合金的靶层。 根据本发明的目标单元具有在基体和目标层之间的中间层，其中其一侧牢固地附接到基体的外周表面，同时其另一侧牢固地附着到内表面 的目标层。 此外，根据本发明的方法包括以下步骤：制备圆筒形式的基体; 通过硬面施加插入层在所述基体的外周表面上; 并且通过硬面进一步在所述插入层的外周表面上施加目标层。

公开(公告)号：US5282946A

公开(公告)日：1994-02-01

申请号：US903748

申请日：1992-06-25

申请人： Makoto Kinoshita ,  Jun Tamura ,  Masaki Morikawa ,  Kunio Kishida ,  Toshinori Ishii ,  Akifumi Mishima

发明人： Makoto Kinoshita ,  Jun Tamura ,  Masaki Morikawa ,  Kunio Kishida ,  Toshinori Ishii ,  Akifumi Mishima

IPC分类号： C22C5/04 ,  C22C19/07 ,  C23C14/34

CPC分类号： C22C19/07 ,  C22C5/04 ,  C23C14/3414

摘要： A sputtering target of platinum-cobalt alloy is disclosed which contains 10 to 55% by weight of platinum; 1 to 15% by weight of a first additional element selected from the group consisting of nickel and tantalum; no more than 1.5% by weight of a second additional element selected from the group consisting of boron, titanium, lanthanum, cerium, neodymium, beryllium, calcium, zirconium, and silicon; no more than 20% by weight of chromium; and balance cobalt. A method for manufacturing the sputtering target is also disclosed. In the method, a platinum-cobalt alloy containing specific ingredients in predetermined amounts is first prepared. Then, the platinum-cobalt alloy is subjected to hot plastic working with a thickness reduction of no less than 30%. Subsequently, the alloy thus hot worked is subjected to a cold plastic working with a thickness reduction of no less than 5% at a temperature less than the recrystallization temperature of the alloy.

摘要翻译： 公开了一种铂 - 钴合金的溅射靶，其包含10至55重量％的铂; 1至15重量％的选自镍和钽的第一附加元素; 不超过1.5重量％的选自硼，钛，镧，铈，钕，铍，钙，锆和硅的第二附加元素; 不超过20％的铬; 并平衡钴。 还公开了溅射靶的制造方法。 在该方法中，首先制备含有预定量的特定成分的铂 - 钴合金。 然后，铂 - 钴合金经受热塑性加工，其厚度减小不小于30％。 随后，将这样热加工的合金在小于合金的再结晶温度的温度下进行厚度降低不小于5％的冷塑性加工。