公开(公告)号：US20140339073A1

公开(公告)日：2014-11-20

申请号：US14333589

申请日：2014-07-17

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Koki YANO ,  Futoshi UTSUNO

IPC: H01J37/34 ,  C23C14/08 ,  H01L21/02 ,  C01G15/00

CPC classification number: H01J37/3429 ,  C01G15/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/62655 ,  C04B35/64 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6585 ,  C04B2235/6586 ,  C04B2235/725 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/086 ,  C23C14/3414 ,  H01J2237/332 ,  H01L21/02565 ,  H01L21/02631

Abstract: A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4.

Abstract translation: 包含铟（In），镓（Ga）和锌（Zn）的氧化物的溅射靶，其包含ZnGa 2 O 4所示的化合物和InGaZnO 4所示的化合物。

公开(公告)号：US20140167033A1

公开(公告)日：2014-06-19

申请号：US14085199

申请日：2013-11-20

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Futoshi UTSUNO ,  Kazuyoshi INOUE ,  Hirokazu KAWASHIMA ,  Masashi KASAMI ,  Koki YANO ,  Kota TERAI

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/242 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/441 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/7869

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract translation: 氧化物烧结体包括固溶于其中的氧化铟和镓，所述氧化物烧结体的原子比“Ga /（Ga + In）”为0.001〜0.12，含有基于80原子％以上的量的铟和镓 总金属原子，并具有In2O3二氧化硅结构。

公开(公告)号：US20130101807A1

公开(公告)日：2013-04-25

申请号：US13712024

申请日：2012-12-12

Applicant: Idemitsu Kosan Co., Ltd.

Inventor： Koki YANO ,  Kazuyoshi INOUE ,  Nobuo TANAKA

IPC: C23C14/08

CPC classification number: H01B1/08 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6262 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/664 ,  C04B2235/763 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/963 ,  C23C14/086 ,  C23C14/3414 ,  Y10T428/24777

Abstract: A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.

Abstract translation: 包括铟，锡，锌和氧的溅射靶，并且包括六方层状化合物，尖晶石结构化合物和双峰结构化合物。

公开(公告)号：US20220199784A1

公开(公告)日：2022-06-23

申请号：US17598817

申请日：2020-03-26

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Emi KAWASHIMA ,  Kazuyoshi INOUE ,  Masashi OYAMA ,  Masatoshi SHIBATA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 μm to 0.5 μm.

公开(公告)号：US20210020784A1

公开(公告)日：2021-01-21

申请号：US17030618

申请日：2020-09-24

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE

IPC: H01L29/786 ,  C23C14/34 ,  C23C14/16 ,  C22C30/04 ,  C22C30/06 ,  H01L29/66 ,  H01L21/02

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

公开(公告)号：US20160343554A1

公开(公告)日：2016-11-24

申请号：US15107993

申请日：2014-12-18

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Kazuyoshi INOUE ,  Kazuaki EBATA ,  Masatoshi SHIBATA ,  Futoshi UTSUNO ,  Yuki TSURUMA ,  Yu ISHIHARA

IPC: H01J37/34 ,  C23C14/34 ,  H01L29/786 ,  C23C14/08 ,  C04B35/01 ,  C04B35/64

CPC classification number: H01J37/3429 ,  C04B35/01 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/762 ,  C04B2235/764 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide sintered body comprising a bixbyite phase composed of In2O3 and an A3B5O12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).

Abstract translation: 一种氧化物烧结体，包括由In 2 O 3和A 3 B 5 O 12相构成的双相晶相（其中A是选自Sc，Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb中的一种或多种元素 ，Dy，Ho，Er，Tm，Yb和Lu，B是选自Al和Ga的一种或多种元素）。

公开(公告)号：US20160201187A1

公开(公告)日：2016-07-14

申请号：US15075787

申请日：2016-03-21

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE

IPC: C23C14/34 ,  C22C30/04 ,  C22C30/06 ,  C23C14/16

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Abstract translation: 一种场效应晶体管，包括：衬底，至少栅电极，栅极绝缘膜，半导体层，用于半导体层的保护层，设置在衬底上的源电极和漏电极，其中源电极和 漏电极与其间的半导体层连接，栅极绝缘膜位于栅电极和半导体层之间，保护层位于半导体层的至少一个表面上，半导体层包括含有In原子的氧化物，Sn原子 和Zn原子，Zn /（In + Sn + Zn）的原子组成比为25原子％以上且75原子％以下，Sn /（In + Sn + Zn）的原子组成比小于50 原子％。

公开(公告)号：US20130221348A1

公开(公告)日：2013-08-29

申请号：US13838337

申请日：2013-03-15

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Kazuyoshi INOUE ,  Yukio SHIMANE ,  Tadao SHIBUYA ,  Masahiro YOSHINAKA

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  C01G19/00 ,  C01P2006/40 ,  H01L29/66969 ,  H01L29/7869

Abstract: A transparent semiconductor thin film 40 having low carrier concentration and a large energy band gap is produced by forming a thin film which contains indium oxide and an oxide of a positive divalent element, and then oxidizing or crystallizing the thin film.

公开(公告)号：US20130118774A1

公开(公告)日：2013-05-16

申请号：US13713771

申请日：2012-12-13

Applicant: Idemitsu Kosan Co., Ltd.

Inventor： Koki YANO ,  Kazuyoshi INOUE ,  Nobuo TANAKA ,  Akira KAIJO ,  Satoshi UMENO

IPC: H01B1/02 ,  H01B13/00 ,  C23C14/08

CPC classification number: H01B1/02 ,  C03C17/3644 ,  C03C2217/94 ,  C03C2218/33 ,  C03C2218/34 ,  C04B35/453 ,  C04B35/457 ,  C04B35/6261 ,  C04B2235/32 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3272 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/664 ,  C04B2235/72 ,  C04B2235/763 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C23C14/086 ,  C23C14/3414 ,  H01B13/00 ,  Y10T428/24777

Abstract: A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).

Abstract translation: 一种溅射靶，其由至少含有铟，锡和锌的氧化物的烧结体构成，并且包括Zn2SnO4的尖晶石结构化合物和In 2 O 3的菱沸石结构化合物。 溅射靶包括铟，锡，锌和氧，只有通过X射线衍射（XRD）基本观察到由比克比结构化合物引起的峰。

公开(公告)号：US20220388908A1

公开(公告)日：2022-12-08

申请号：US17885147

申请日：2022-08-10

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Yuki TSURUMA ,  Shigekazu TOMAI

IPC: C04B35/01 ,  C23C14/34 ,  H01L27/146 ,  H01L29/786

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80≤In/(In+Y+Ga)≤0.96  (1), 0.02≤Y/(In+Y+Ga)≤0.10  (2), and 0.02≤Ga/(In+Y+Ga)≤0.10  (3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005≤Al/(In+Y+Ga+Al)≤0.07  (4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.