公开(公告)号：US06939403B2

公开(公告)日：2005-09-06

申请号：US10299069

申请日：2002-11-19

申请人： Igor Ivanov ,  Chiu Ting ,  Jonathan Weiguo Zhang ,  Arthur Kolics

发明人： Igor Ivanov ,  Chiu Ting ,  Jonathan Weiguo Zhang ,  Arthur Kolics

IPC分类号： H01L21/00 ,  H01L21/677 ,  B05C11/02

CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67769

摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

摘要翻译： 本发明公开了一种站，例如用于具有柔性配置的IC制造。 它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。 每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。 该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，用于在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。 车站占用服务室的空间和洁净室的空间。 连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。 因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

公开(公告)号：US06913651B2

公开(公告)日：2005-07-05

申请号：US10103015

申请日：2002-03-22

申请人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/288 ,  B05C5/00 ,  B05C11/00

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

公开(公告)号：US20060076244A1

公开(公告)日：2006-04-13

申请号：US11289998

申请日：2005-11-30

申请人： Chiu Ting ,  Igor Ivanov

发明人： Chiu Ting ,  Igor Ivanov

IPC分类号： C25D7/12 ,  C25D5/10 ,  C25D17/00

CPC分类号： H01L21/76843 ,  H01L21/288 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A damascene process for introducing copper into metallization layers in microelectronic structures includes a step of forming an enhancement layer of a metal alloy, such as a copper alloy or Co—W—P, over the barrier layer, using PVD, CVD or electrochemical deposition prior to electrochemically depositing copper metallization. The enhancement layer has a thickness from 10 Å to 100 Å and conformally covers the discontinuities, seams and grain boundary defects in the barrier layer. The enhancement layer provides a conductive surface onto which a metal layer, such as copper metallization, may be applied with electrochemical deposition. Alternatively, a seed layer may be deposited over the enhancement layer prior to copper metallization.

摘要翻译： 用于在微电子结构中将铜引入金属化层的镶嵌工艺包括在电化学上之前使用PVD，CVD或电化学沉积在阻挡层上形成诸如铜合金或Co-WP的金属合金增强层的步骤 沉积铜金属化。 增强层具有从10到100埃的厚度，并且保形地覆盖阻挡层中的不连续性，接缝和晶界缺陷。 增强层提供导电表面，在其上可以用电化学沉积施加金属层，例如铜金属化。 或者，在铜金属化之前，种子层可以沉积在增强层上。

公开(公告)号：US06902605B2

公开(公告)日：2005-06-07

申请号：US10379692

申请日：2003-03-06

申请人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

发明人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

IPC分类号： C23C18/36 ,  C23C18/50 ,  C23C18/34 ,  B05D1/18

CPC分类号： H01L21/288 ,  C23C18/36 ,  C23C18/50 ,  H01L21/76849

摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.

摘要翻译： 本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。 无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。 来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。 这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

公开(公告)号：US20070051306A1

公开(公告)日：2007-03-08

申请号：US11217750

申请日：2005-09-01

申请人： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

发明人： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

IPC分类号： B05C13/02 ,  B05B15/12 ,  B05B3/00 ,  B05C5/00

CPC分类号： H01L21/67173 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67769

摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

摘要翻译： 本发明公开了一种站，例如用于具有柔性配置的IC制造。 它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。 每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。 该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，以在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。 车站占用服务室的空间和洁净室的空间。 连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。 因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

公开(公告)号：US07972652B2

公开(公告)日：2011-07-05

申请号：US11549644

申请日：2006-10-14

申请人： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

发明人： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

IPC分类号： B05D5/12 ,  B28B19/00 ,  B29B15/10 ,  C23C18/00 ,  C23C20/00 ,  C23C24/00 ,  C23C26/00 ,  C23C28/00 ,  H01C17/06 ,  H05K3/00

CPC分类号： C23C18/1683 ,  C23C18/1628 ,  C23C18/1682

摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.

摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。

公开(公告)号：US20090175856A1

公开(公告)日：2009-07-09

申请号：US12084740

申请日：2006-11-13

申请人： Katja Wosikowski-Buters ,  Christoph Schaab ,  Marino Schuhmacher ,  Franz Obermayr ,  Igor Ivanov

发明人： Katja Wosikowski-Buters ,  Christoph Schaab ,  Marino Schuhmacher ,  Franz Obermayr ,  Igor Ivanov

IPC分类号： A61K39/395 ,  A61K31/517 ,  A61K31/7064 ,  A61K31/505 ,  A61P35/00

CPC分类号： A61K31/555 ,  A61K31/505 ,  A61K33/24 ,  A61K45/06 ,  A61K2300/00

摘要： The present invention describes a method or uses of prevention and/or treatment of a cancer or a tumor, and in particular to a combination therapy, methods, compositions and pharmaceutical packages comprising an inhibitor of receptors of the EGFR family or a chemotherapeutically active pyrimidine analogue and certain platinum-based chemotherapeutic agents.

摘要翻译： 本发明描述了预防和/或治疗癌症或肿瘤的方法或用途，特别是涉及包含EGFR家族受体抑制剂或化学治疗活性嘧啶类似物的组合疗法，方法，组合物和药物包装 和某些铂类化疗剂。

公开(公告)号：US20070284746A1

公开(公告)日：2007-12-13

申请号：US11742328

申请日：2007-04-30

申请人： Sergey Lopatin ,  Robert Fiordalice ,  Faivel Pintchovski ,  Igor Ivanov ,  Wen Kong ,  Artur Kolics

发明人： Sergey Lopatin ,  Robert Fiordalice ,  Faivel Pintchovski ,  Igor Ivanov ,  Wen Kong ,  Artur Kolics

IPC分类号： H01L21/82

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76874 ,  Y10S977/723

摘要： An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.

摘要翻译： 提供一种集成电路，其包括具有在电介质层中设置的沟槽和通孔的集成电路。 纳米电极阵列位于沟槽和通孔中的电介质层的上方，导体在纳米电极阵列的上方。 导体和纳米电极阵列与电介质层的表面共面。

公开(公告)号：US20060193492A1

公开(公告)日：2006-08-31

申请号：US11415120

申请日：2006-05-02

申请人： Vsevolod Kuzmich ,  Igor Ivanov

发明人： Vsevolod Kuzmich ,  Igor Ivanov

IPC分类号： G06K9/00

CPC分类号： G06T1/0021 ,  G06T2201/0051 ,  G06T2201/0052

摘要： A method of generating a protected digital media content, is provided. According to an embodiment of the present invention, the method includes generating a protected digital media content, comprising: generating a first control signal for use in an authorization signature of digital media content, generating a second control signal for use in a certification of the content owner's right, and generating information about the digital media content; and adding the first control signal, the second control signal, and the information to the digital media content to provide a protected content.

摘要翻译： 提供了一种产生受保护的数字媒体内容的方法。 根据本发明的实施例，该方法包括生成受保护的数字媒体内容，包括：产生用于数字媒体内容的授权签名的第一控制信号，产生用于内容认证的第二控制信号 所有者权利，并生成有关数字媒体内容的信息; 以及将第一控制信号，第二控制信号和信息添加到数字媒体内容以提供受保护的内容。

公开(公告)号：US20060030143A1

公开(公告)日：2006-02-09

申请号：US11199621

申请日：2005-08-09

申请人： Igor Ivanov

发明人： Igor Ivanov

IPC分类号： H01L21/4763

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.