摘要:
A semiconductor heat spreader from a unitary metallic plate is provided. The unitary metallic plate is formed into a panel, channel walls, at least two feet, and at least one external reversing bend. The channel walls depend from the panel to define a channel between the channel walls and the panel for receiving a semiconductor therein. The feet extend from respective channel walls for attachment to a substrate.
摘要:
A method for fabricating a semiconductor heat spreader from a unitary metallic plate is provided. The unitary metallic plate is formed into a panel, channel walls, at least two feet, and at least one external reversing bend. The channel walls depend from the panel to define a channel between the channel walls and the panel for receiving a semiconductor therein. The feet extend from respective channel walls for attachment to a substrate.
摘要:
A method for fabricating a semiconductor package with a substrate in a strip format is provided. Semiconductor devices are attached in a strip format to the substrate, and a thermal interface material is applied to the semiconductor devices. A flat panel heat spreader is attached to each semiconductor device. The semiconductor devices are encapsulated with open encapsulation, leaving the surface of the flat panel heat spreader opposite the substrate externally exposed. Individual semiconductor packages are then singulated from the strip format.
摘要:
An electronic device having a substrate carrier is provided. A semiconductor connected to the substrate carrier. A heat spreader having upper and lower surfaces and legs recessed below the lower surface is connected to the substrate carrier. The Z-dimension between the heat spreader and the substrate carrier is maintained over substantially the entire area of the substrate carrier.
摘要:
A semiconductor heat spreader from a unitary metallic plate is provided. The unitary metallic plate is formed into a panel, channel walls, at least two feet, and at least one external reversing bend. The channel walls depend from the panel to define a channel between the channel walls and the panel for receiving a semiconductor therein. The feet extend from respective channel walls for attachment to a substrate.
摘要:
A method for fabricating a semiconductor device heat spreader from a unitary piece of metallic material. The metallic material is stamped to form a unitary heat spreader having an upper heat dissipation region, a lower substrate contact region, and supports connecting the upper heat dissipation region and the lower substrate contact region. A recess is formed within the supports and the upper and lower regions for receiving a semiconductor device.
摘要:
An integrated circuit die is provided having a body portion having a singulation side and a pedestal portion extending from the body portion and having a singulation side coplanar with the singulation side of the body portion.
摘要:
An integrated circuit die is provided having a body portion having a singulation side and a pedestal portion extending from the body portion and having a singulation side coplanar with the singulation side of the body portion.
摘要:
A method for forming a heat spreader, and the heat spreader formed thereby, are disclosed. An array heat spreader having a plurality of connected heat spreader panels is formed. Slots are formed in opposing sides of the heat spreader panels. Legs are formed on and extending downwardly from each of the heat spreader panels in at least an opposing pair of the slots on the heat spreader panels. The legs are integral with the respective heat spreader panels from which they depend.
摘要:
A method and apparatus for stacked die packaging provide a leadframe configured for supporting a lower semiconductor die. At least one pillar is formed on the leadframe for supporting an upper semiconductor die. The pillar is formed integrally with and of the same material as the leadframe, and is sized to have a predetermined height that is higher than the height of such a lower semiconductor die plus the height of bonding wires for such a lower semiconductor die plus a predetermined spacing between such bonding wires and the bottom of an upper semiconductor die to be supported on the at least one pillar.