公开(公告)号：US20200371260A1

公开(公告)日：2020-11-26

申请号：US15930452

申请日：2020-05-13

申请人： InnoLux Corporation

发明人： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC分类号： G01T1/24 ,  H01L27/146

摘要： A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US09235093B2

公开(公告)日：2016-01-12

申请号：US14463148

申请日：2014-08-19

申请人： Innolux Corporation

发明人： Hsin-Hung Lin ,  Cheng-Hsu Chou

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1333

CPC分类号： G02F1/136286 ,  G02F1/133345 ,  G02F2001/13629

摘要： This disclosure provides a display apparatus which includes a substrate, first TFTs, scan lines and data lines connected to the first TFTs, and second TFTs for controlling inspection-use display signals; wherein each of the second TFTs includes: a first gate electrode disposed on the substrate; a first insulation layer disposed on the first gate electrode; an active unit disposed on the first insulation layer and having a source electrode electrically connected to one of the data lines, an active layer including an oxide semiconductor, and a drain electrode; a second insulation layer disposed on the active unit; and a second gate electrode disposed on the second insulation layer; wherein the first TFTs, the scan lines, and the data lines are disposed in a display area on the substrate, and the second TFTs are disposed in an area other than the display area on the substrate.

摘要翻译： 本公开提供一种显示装置，其包括基板，第一TFT，扫描线和连接到第一TFT的数据线，以及用于控制检查用显示信号的第二TFT; 其中每个第二TFT包括：设置在基板上的第一栅电极; 设置在所述第一栅电极上的第一绝缘层; 设置在所述第一绝缘层上并具有与所述数据线之一电连接的源电极的有源单元，包括氧化物半导体的有源层和漏电极; 设置在所述有源单元上的第二绝缘层; 以及设置在所述第二绝缘层上的第二栅电极; 其中第一TFT，扫描线和数据线被布置在基板上的显示区域中，并且第二TFT设置在除了基板上的显示区域之外的区域中。

公开(公告)号：US09653482B2

公开(公告)日：2017-05-16

申请号：US15056538

申请日：2016-02-29

申请人： InnoLux Corporation

发明人： Hui-Min Huang ,  Hsin-Hung Lin ,  Li-Wei Sung

IPC分类号： H01L29/10 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A display panel comprises a TFT substrate and a display medium layer. The display medium layer is disposed on the TFT substrate. The TFT substrate comprises a TFT and a substrate. The TFT is disposed on the substrate and comprises a gate, a metal oxide layer, a source, a drain and a protection layer. The gate is disposed corresponding to the metal oxide layer. The protection layer is disposed on the metal oxide layer. Each of the source and the drain contacts the metal oxide layer through an opening of the protection layer. One side of the gate or one side of the metal oxide layer partially overlaps at least one of the openings. In addition, a display device is also disclosed.

公开(公告)号：US10203577B2

公开(公告)日：2019-02-12

申请号：US15434070

申请日：2017-02-16

申请人： Innolux Corporation

发明人： Te-Yi Chen ,  Han-Tsung Su ,  Hsin-Hung Lin ,  Ker-Yih Kao

IPC分类号： H01L29/45 ,  H01L29/66 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786

摘要： An active element array substrate including a substrate, a first metal layer, a first insulation layer, a semiconductor layer, a first patterned conductive layer, a second metal layer, a second insulation layer, and a second patterned conductive layer is provided. The semiconductor layer is disposed on the first insulation layer. The first patterned conductive layer is disposed on the first insulation layer and covers a partial region of the semiconductor layer. The second metal layer is disposed on the first patterned conductive layer. The second insulation layer is disposed on the second metal layer and covers at least a partial region of the second metal layer, the first patterned conductive layer, the semiconductor layer, and the first insulation layer. The second patterned conductive layer is disposed on the second insulation layer and overlapped with the first patterned conductive layer. A display panel is also provided.

公开(公告)号：US20170235172A1

公开(公告)日：2017-08-17

申请号：US15434070

申请日：2017-02-16

申请人： Innolux Corporation

发明人： Te-Yi Chen ,  Han-Tsung Su ,  Hsin-Hung Lin ,  Ker-Yih Kao

IPC分类号： G02F1/1368 ,  H01L29/45 ,  H01L29/417 ,  G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/1368 ,  G02F1/136286 ,  G02F2001/134318 ,  G02F2001/134345 ,  G02F2001/136236 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786

摘要： An active element array substrate including a substrate, a first metal layer, a first insulation layer, a semiconductor layer, a first patterned conductive layer, a second metal layer, a second insulation layer, and a second patterned conductive layer is provided. The semiconductor layer is disposed on the first insulation layer. The first patterned conductive layer is disposed on the first insulation layer and covers a partial region of the semiconductor layer. The second metal layer is disposed on the first patterned conductive layer. The second insulation layer is disposed on the second metal layer and covers at least a partial region of the second metal layer, the first patterned conductive layer, the semiconductor layer, and the first insulation layer. The second patterned conductive layer is disposed on the second insulation layer and overlapped with the first patterned conductive layer. A display panel is also provided.

公开(公告)号：US09601519B2

公开(公告)日：2017-03-21

申请号：US15155325

申请日：2016-05-16

申请人： InnoLux Corporation

发明人： Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L23/31 ,  H01L23/48 ,  H01L29/417 ,  H01L29/51 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/4757

CPC分类号： H01L27/1225 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/47573 ,  H01L23/3171 ,  H01L23/481 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film transistor is provided, which includes a gate electrode on a substrate; a channel layer overlapping the gate electrode; a dielectric layer between the gate electrode and the channel layer; a source electrode and a drain electrode electrically connecting to the channel layer; a passivation layer overlying the source electrode, the drain electrode, and the gate dielectric layer, wherein the channel layer includes two contact portions being in contact with the source electrode and the drain electrode, respectively, and a non-contact portion located between the two contact portions, and wherein one of the two contact portions has a first thickness in a first direction perpendicular to a surface of the substrate, and the non-contact portion has a second thickness less than the first thickness in the first direction.

公开(公告)号：US20210349222A1

公开(公告)日：2021-11-11

申请号：US17379969

申请日：2021-07-19

申请人： InnoLux Corporation

发明人： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC分类号： G01T1/24 ,  H01L27/146

摘要： A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US11099284B2

公开(公告)日：2021-08-24

申请号：US15930452

申请日：2020-05-13

申请人： InnoLux Corporation

发明人： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC分类号： G01T1/24 ,  H01L27/146

摘要： A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US20210125888A1

公开(公告)日：2021-04-29

申请号：US17074538

申请日：2020-10-19

申请人： Innolux Corporation

发明人： Hsin-Hung Lin ,  Chih-Hao Wu

IPC分类号： H01L23/31 ,  H01L21/56

摘要： An electronic device is provided. The electronic device includes a substrate, an active element, a first insulation layer, and a detection element. The active element is disposed on the substrate. The first insulation layer is disposed on the active element. The detection element is disposed on the first insulation layer. The detection element comprises a lower electrode, an active layer and an upper electrode, and the lower electrode is a part of a conductive layer. The first insulation layer has a recess, and the recess does not overlap with the conductive layer in the normal direction of the substrate.

公开(公告)号：US10593709B2

公开(公告)日：2020-03-17

申请号：US16130450

申请日：2018-09-13

申请人： InnoLux Corporation

发明人： Hsin-Hung Lin ,  Chin-Chi Chen

IPC分类号： H01L27/12 ,  H01L27/02 ,  H01L29/786 ,  H01L27/146 ,  H01L23/60 ,  G02F1/1362

摘要： A panel device includes a substrate, a common electrode, and an electrostatic protection component. The substrate includes an active area and a peripheral area, the peripheral area is outside of the active area, and a plurality of signal lines is disposed on the substrate. The common electrode is disposed on the substrate, and at least part of the common electrode is disposed in the peripheral area. The electrostatic protection component is disposed in the peripheral area of the substrate and electrically connected to one of the plurality of signal lines and the common electrode, and the electrostatic protection component includes a first double-gate transistor. The first double-gate transistor includes a first gate, a second gate, a first electrode and a second electrode. The first gate is electrically connected to the first electrode, and the second gate is electrically connected to the second electrode.