公开(公告)号：US20180130819A1

公开(公告)日：2018-05-10

申请号：US15683672

申请日：2017-08-22

Applicant: Intel Corporation

Inventor： Hongbin Zhu ,  Jun Zhao ,  Purnima Narayanan ,  Gordon Haller ,  Damir Fazil

IPC: H01L27/11582 ,  H01L27/1157 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  H01L21/768 ,  G11C16/24

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/1157

Abstract: 3D NAND memory devices and systems having reduced bit line to drain select gate shorting, including associated methods, are provided and described.

公开(公告)号：US09741734B2

公开(公告)日：2017-08-22

申请号：US14970288

申请日：2015-12-15

Applicant: Intel Corporation

Inventor： Hongbin Zhu ,  Jun Zhao ,  Purnima Narayanan ,  Gordon Haller ,  Damir Fazil

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/768 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C16/24 ,  G11C16/10

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/1157

Abstract: 3D NAND memory devices and systems having reduced bit line to drain select gate shorting, including associated methods, are provided and described.

公开(公告)号：US20170170190A1

公开(公告)日：2017-06-15

申请号：US14970288

申请日：2015-12-15

Applicant: Intel Corporation

Inventor： Hongbin Zhu ,  Jun Zhao ,  Purnima Narayanan ,  Gordon Haller ,  Damir Fazil

IPC: H01L27/115 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C16/24 ,  H01L21/768 ,  G11C16/08

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/1157

Abstract: 3D NAND memory devices and systems having reduced bit line to drain select gate shorting, including associated methods, are provided and described.

公开(公告)号：US10134758B2

公开(公告)日：2018-11-20

申请号：US15683672

申请日：2017-08-22

Applicant: Intel Corporation

Inventor： Hongbin Zhu ,  Jun Zhao ,  Purnima Narayanan ,  Gordon Haller ,  Damir Fazil

IPC: H01L27/11582 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  H01L21/768 ,  H01L27/1157

Abstract: 3D NAND memory devices and systems having reduced bit line to drain select gate shorting, including associated methods, are provided and described.