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公开(公告)号：US20230118621A1
公开(公告)日：2023-04-20
申请号：US17451550
申请日：2021-10-20
摘要： A method of processing data and related apparatuses. The method relies on an optical finite impulse response (FIR) filter. This optical FIR filter comprises several delay stages having weights set in accordance with parameters of a transformation to be applied by the optical FIR filter. Each of the delay stages is configured to impose a delay matched to a given input data period corresponding to a given input sample rate. According to the method, an optical signal is coupled into the optical FIR filter. The optical signal carries a data stream of input samples encoded at the given input sample rate; the data stream represents the data to be processed. Next, output samples are collected from an output data stream carried by an output optical signal obtained in output of the optical FIR filter. A set of output samples are obtained, which are representative of processed data.
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公开(公告)号：US20220278274A1
公开(公告)日：2022-09-01
申请号：US17189173
申请日：2021-03-01
发明人： Bert Jan Offrein , Valeria Bragaglia , Folkert Horst , Antonio La Porta , Roger F. Dangel , Daniel S. Jubin
摘要： An electrical memristive device has a layer structure. The later structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfOy layer, where 1.3±0.1≤y
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公开(公告)号：US10197971B1
公开(公告)日：2019-02-05
申请号：US15666668
申请日：2017-08-02
发明人： Folkert Horst
摘要： An integrated optical circuit for holographic information processing is disclosed. The optical circuit comprises a photorefractive medium and two transmitter arrays. The transmitter arrays are adapted for locally changing the refractive index of the photorefractive medium for holographic encoding of the information in a working plane of the photorefractive medium by transmitting light via optical paths into the photorefractive medium such that an interference pattern is generated in the working plane. The optical paths and the working plane are arranged in a single optical plane.
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公开(公告)号：US09742150B1
公开(公告)日：2017-08-22
申请号：US15257330
申请日：2016-09-06
发明人： Jens Hofrichter , Folkert Horst
CPC分类号： H01S5/1014 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/1032 , H01S5/1203 , H01S5/227 , H01S5/3013 , H01S5/50
摘要： An optical amplifier device includes: an optical waveguide core; an active gain material layer stack; and a dielectric material between the active gain material layer stack and the optical waveguide core. The optical waveguide core includes an input portion, a middle portion, an output portion and tapers. The middle portion is connected to the input and output portions via the tapers. The tapers widen outwardly, whereby the middle portion has an effective refractive index that is smaller than an effective refractive index of any of the input and output portions. The active gain material layer stack includes III-V semiconductor material layers having different refractive indices so as to possess an effective refractive index that is larger than the effective refractive index of the middle portion. The active gain material layer stack extends relative to a subsection of the optical waveguide core that includes the middle portion and tapers.
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5.发明申请公开(公告)号：US20160116689A1
公开(公告)日：2016-04-28
申请号：US14977955
申请日：2015-12-22
CPC分类号： G02B6/4234 , G02B6/32 , G02B6/4204 , G02B6/4214 , G02B6/423 , G02B6/425
摘要： An apparatus includes an optical adaptor having monolithically integrated optical elements and first micro-mechanical features, the latter defining at least a first horizontal reference surface and a first vertical reference surface; wherein the first horizontal reference surface is perpendicular to an optical plane, the latter being perpendicular the optical axis of the optical elements; and wherein the first vertical reference surface is perpendicular to the first horizontal reference surface and parallel to the optical axis.
摘要翻译： 一种装置包括具有单片集成光学元件和第一微机械特征的光学适配器，后者限定了至少第一水平参考表面和第一垂直参考表面; 其中所述第一水平参考表面垂直于光学平面，所述光学平面垂直于所述光学元件的光轴; 并且其中所述第一垂直参考表面垂直于所述第一水平参考表面并平行于所述光轴。
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6.发明授权Arrangement of photonic chip and optical adaptor for coupling optical signals 有权用于耦合光信号的光子芯片和光学适配器的布置公开(公告)号：US09274293B2
公开(公告)日：2016-03-01
申请号：US14043151
申请日：2013-10-01
CPC分类号： G02B6/4234 , G02B6/32 , G02B6/4204 , G02B6/4214 , G02B6/423 , G02B6/425
摘要： An apparatus includes an optical adaptor having monolithically integrated optical elements and first micro-mechanical features, the latter defining at least a first horizontal reference surface and a first vertical reference surface; wherein the first horizontal reference surface is perpendicular to an optical plane, the latter being perpendicular the optical axis of the optical elements; and wherein the first vertical reference surface is perpendicular to the first horizontal reference surface and parallel to the optical axis.
摘要翻译： 一种装置包括具有单片集成光学元件和第一微机械特征的光学适配器，后者限定了至少第一水平参考表面和第一垂直参考表面; 其中所述第一水平参考表面垂直于光学平面，所述光学平面垂直于所述光学元件的光轴; 并且其中所述第一垂直参考表面垂直于所述第一水平参考表面并平行于所述光轴。
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公开(公告)号：US10447006B2
公开(公告)日：2019-10-15
申请号：US15439425
申请日：2017-02-22
发明人： Stefan Abel , Lukas Czornomaz , Jean Fompeyrine , Utz Herwig Hahn , Folkert Horst , Marc Seifried
IPC分类号： H01S5/026 , H01S3/063 , H01S3/23 , H01S5/10 , H01S5/20 , H01S5/042 , H01S5/02 , H01S5/227 , H01S5/22
摘要： The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.
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公开(公告)号：US20180241176A1
公开(公告)日：2018-08-23
申请号：US15439425
申请日：2017-02-22
发明人： Stefan Abel , Lukas Czornomaz , Jean Fompeyrine , Utz Herwig Hahn , Folkert Horst , Marc Seifried
CPC分类号： H01S5/026 , H01S3/0637 , H01S3/2375 , H01S5/021 , H01S5/0425 , H01S5/1003 , H01S5/1014 , H01S5/1032 , H01S5/2031 , H01S5/2224 , H01S5/227
摘要： The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.
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公开(公告)号：US09941664B1
公开(公告)日：2018-04-10
申请号：US15466323
申请日：2017-03-22
发明人： Herwig Hahn , Folkert Horst , Marc Seifried
CPC分类号： H01S5/2022 , H01S5/021 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/0653 , H01S5/1014 , H01S5/1032 , H01S5/1035 , H01S5/1203 , H01S5/125 , H01S5/2027 , H01S5/2031 , H01S5/2054
摘要： A hybrid III-V on silicon laser device includes a layer structure, with a stack of III-V semiconductor gain materials, a silicon waveguide core and a cladding structure. The semiconductor gain materials stack is along a stacking direction, which is perpendicular to a main plane of the stack. The silicon waveguide core extends along a longitudinal direction, parallel to the main plane. The cladding structure extends between said waveguide core and the stack. The device further comprises an optical coupling structure formed in the layer structure. This coupling structure is designed: 1) to allow a hybrid-mode optical coupling of radiation between the stack of III-V semiconductor gain materials and the tapered waveguide core; and 2) to favor a coupling of a fundamental transverse optical mode of said radiation over a coupling of one or more higher-order transverse optical modes of said radiation from the stack into the waveguide core.
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公开(公告)号：US10534204B2
公开(公告)日：2020-01-14
申请号：US15802757
申请日：2017-11-03
发明人： Folkert Horst
摘要： Aspects of the present disclosure are directed to a photorefractive layer stack. A plurality of layers are stacked along in a stacking direction and designed so as to enable a photorefractive response. That is, a refractive index of the plurality of layers modulates in response to illuminating the plurality of layers with an optical pattern of modulated intensity. A plurality of electrically insulated areas are arranged in a plane perpendicular to the stacking direction. The plurality of electrically insulated areas are optically homogenous and prevent lateral diffusion between any two electrically insulated areas of the plurality of electrically insulated areas.
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