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公开(公告)号：US10417519B2
公开(公告)日：2019-09-17
申请号：US15797366
申请日：2017-10-30
摘要： A method for crystal analysis includes identifying a crystalline region on a device where an electronic channeling pattern is needed to be determined, acquiring a whole image for each of a plurality of different positions for the crystalline region using a scanning electron microscope (SEM) as the crystalline region is moved to different positions. Relevant regions are extracted from the whole images. The images of the relevant regions are stitched together to form a composite map of a full electron channeling pattern representative of the crystalline region wherein the electronic channeling pattern is provided due to an increase in effective angular range between a SEM beam and a surface of the crystal region.
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公开(公告)号：US10177062B2
公开(公告)日：2019-01-08
申请号：US15815997
申请日：2017-11-17
摘要： Embodiments are directed to a method of passivating a surface of a high-mobility semiconductor and resulting structures having a reduced interface defect density. A semiconductor layer is formed on a substrate. A surface of the semiconductor layer is contacted with a sulfur source including thiourea at a temperature of up to about 90 degrees Celsius to form a sulfur passivation layer on the surface of the semiconductor layer. A dielectric layer is formed on the sulfur passivation layer and a minimum of interface trap density distribution at an interface between the semiconductor layer and the dielectric layer is less than about 2.0×1011 cm−2eV−1.
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公开(公告)号：US20180301593A1
公开(公告)日：2018-10-18
申请号：US16018893
申请日：2018-06-26
发明人： Ning Li , Qinglong Li , Kunal Mukherjee , Devendra K. Sadana , Ghavam G. Shahidi
CPC分类号： H01L33/06 , H01L29/122 , H01L29/127 , H01L33/30
摘要： Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.
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公开(公告)号：US10043941B1
公开(公告)日：2018-08-07
申请号：US15420403
申请日：2017-01-31
发明人： Ning Li , Qinglong Li , Kunal Mukherjee , Devendra K. Sadana , Ghavam G. Shahidi
摘要： Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting semiconductor structure includes a first barrier region, a second barrier region, and a single quantum well having a preselected thickness between the first barrier region and the second barrier region. The preselected thickness according to embodiments is selected to achieve a predetermined charge density in the quantum well. The predetermined charge density according to embodiments results from a predetermined bias current applied to the semiconductor structure. The predetermined bias current according to embodiments comprises less than about 1 mA.
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公开(公告)号：US20180331158A1
公开(公告)日：2018-11-15
申请号：US15813919
申请日：2017-11-15
发明人： Stephen W. Bedell , Ning Li , Qinglong Li , Kunal Mukherjee , Devendra Sadana , Ghavam G. Shahidi
IPC分类号： H01L27/30 , H01L31/05 , H02S40/34 , H01L31/0687 , H01L31/043 , H01L31/02
CPC分类号： H01L27/302 , H01L31/02021 , H01L31/043 , H01L31/0504 , H01L31/0687 , H02S40/34
摘要： A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.
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6.发明申请公开(公告)号：US20180277367A1
公开(公告)日：2018-09-27
申请号：US15467265
申请日：2017-03-23
发明人： Stephen W. Bedell , Cheng-Wei Cheng , Kunal Mukherjee , John A. Ott , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L21/02 , H01L29/04 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02694 , H01L21/02488 , H01L21/02513 , H01L21/02538 , H01L21/02546 , H01L21/02609 , H01L21/02614 , H01L21/02664 , H01L21/02667 , H01L21/30617 , H01L21/3065 , H01L29/04
摘要： A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.
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公开(公告)号：US20180197805A1
公开(公告)日：2018-07-12
申请号：US15815997
申请日：2017-11-17
CPC分类号： H01L23/3171 , H01L21/0206 , H01L21/02112 , H01L21/02227 , H01L21/02359 , H01L21/02362 , H01L23/29 , H01L23/291 , H01L23/298 , H01L23/3135 , H01L23/3192 , H01L29/20 , H01L29/408 , H01L29/513 , H01L29/517
摘要： Embodiments are directed to a method of passivating a surface of a high-mobility semiconductor and resulting structures having a reduced interface defect density. A semiconductor layer is formed on a substrate. A surface of the semiconductor layer is contacted with a sulfur source including thiourea at a temperature of up to about 90 degrees Celsius to form a sulfur passivation layer on the surface of the semiconductor layer. A dielectric layer is formed on the sulfur passivation layer and a minimum of interface trap density distribution at an interface between the semiconductor layer and the dielectric layer is less than about 2.0×1011 cm−2eV−1.
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公开(公告)号：US20180197804A1
公开(公告)日：2018-07-12
申请号：US15815991
申请日：2017-11-17
CPC分类号： H01L23/3171 , H01L21/0206 , H01L21/02112 , H01L21/02227 , H01L21/02359 , H01L21/02362 , H01L23/29 , H01L23/291 , H01L23/298 , H01L23/3135 , H01L23/3192 , H01L29/20 , H01L29/408 , H01L29/513 , H01L29/517
摘要： Embodiments are directed to a method of passivating a surface of a high-mobility semiconductor and resulting structures having a reduced interface defect density. A semiconductor layer is formed on a substrate. A surface of the semiconductor layer is contacted with a sulfur source including thiourea at a temperature of up to about 90 degrees Celsius to form a sulfur passivation layer on the surface of the semiconductor layer. A dielectric layer is formed on the sulfur passivation layer and a minimum of interface trap density distribution at an interface between the semiconductor layer and the dielectric layer is less than about 2.0×1011 cm−2 eV−1.
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公开(公告)号：US11482573B2
公开(公告)日：2022-10-25
申请号：US15813919
申请日：2017-11-15
发明人： Stephen W. Bedell , Ning Li , Qinglong Li , Kunal Mukherjee , Devendra Sadana , Ghavam G. Shahidi
IPC分类号： H01L25/16 , H01L31/0687 , H01L27/30 , H01L31/05 , H02S40/34 , H01L31/02 , H01L31/043 , H01L31/0693 , H01L31/0304
摘要： A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.
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10.发明授权公开(公告)号：US10755925B2
公开(公告)日：2020-08-25
申请号：US16516835
申请日：2019-07-19
发明人： Stephen W. Bedell , Cheng-Wei Cheng , Kunal Mukherjee , John A. Ott , Devendra K. Sadana , Brent A. Wacaser
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/306 , H01L29/04
摘要： A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over a crystalline substrate, epitaxially growing a second crystalline material over the first crystalline material, and patterning and removing portions of the second crystalline material to form openings. The method further includes converting the first crystalline material into a non-crystalline material, depositing a thermally stable material in the openings, depositing a capping layer over the second crystalline material and the thermally stable material to form a substantially enclosed semiconductor structure, and annealing the substantially enclosed semiconductor structure.
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