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公开(公告)号：US11177349B2
公开(公告)日：2021-11-16
申请号：US16747027
申请日：2020-01-20
发明人： Yulong Li , Paul M. Solomon , Siyuranga Koswatta
IPC分类号： H01L29/10 , H01L29/06 , H01L29/66 , H01L29/68 , H01L29/49 , H01L29/205 , H01L29/80 , H01L27/11521 , H01L27/1159 , H01L29/51 , H01L29/78 , H01L21/28 , H01L29/165 , H01L27/108 , H01L29/788 , H01L27/24 , H01L29/423
摘要： A method and resulting structures for a semiconductor device includes forming a source terminal of a semiconductor fin on a substrate. An energy barrier is formed on a surface of the source terminal. A channel is formed on a surface of the energy barrier, and a drain terminal is formed on a surface of the channel. The drain terminal and the channel are recessed on either sides of the channel, and the energy barrier is etched in recesses formed by the recessing. The source terminal is recessed using timed etching to remove a portion of the source terminal in the recesses formed by etching the energy barrier. A first bottom spacer is formed on a surface of the source terminal and a sidewall of the semiconductor fin, and a gate stack is formed on the surface of the first bottom spacer.
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公开(公告)号：US20210343647A1
公开(公告)日：2021-11-04
申请号：US17374327
申请日：2021-07-13
发明人： John Bruley , Jack O. Chu , Kam-Leung Lee , Ahmet S. Ozcan , Paul M. Solomon , Jeng-Bang Yau
IPC分类号： H01L23/535 , H01L23/532 , H01L29/78 , H01L21/768 , C22C30/00 , H01L23/485 , H01L21/285
摘要： A method of forming a contact to a semiconductor device is provided that forms an alloy composed of nickel (Ni), platinum (Pt), aluminum (Al), titanium (Ti) and a semiconductor material. The methods may include forming a nickel and platinum semiconductor alloy at a base of a via. A titanium layer having an angstrom scale thickness is deposited in the via in contact with the nickel platinum semiconductor alloy. An aluminum containing fill is deposited atop the titanium layer. A forming gas anneal including an oxygen containing atmosphere is applied to the structure to provide a contact alloy comprising nickel, platinum, aluminum, titanium and a semiconductor element from the contact surface of the semiconductor device.
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公开(公告)号：US20200161545A1
公开(公告)日：2020-05-21
申请号：US16749042
申请日：2020-01-22
发明人： Guy M. Cohen , Paul M. Solomon
摘要： A method of tuning a PCM device is disclosed. The method includes receiving a command and determining if the command is a SET command or a RESET command. When the command is a RESET command, the method provides a short pulse across a resistive electrode and a top electrode through a phase change material generating amorphous PCM at the point of highest voltage across the PCM region.
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公开(公告)号：US10658384B2
公开(公告)日：2020-05-19
申请号：US16576441
申请日：2019-09-19
发明人： David J. Frank , Paul M. Solomon , Xiao Sun
IPC分类号： H01L21/02 , H01L27/1159 , H01L29/78 , H01L29/45 , H01L27/092
摘要： A field-effect transistor includes a semiconductor substrate having first, second, third, and fourth sides, and a ferroelectric gate stack on an upper surface of the substrate. The ferroelectric gate stack includes a gate insulating layer; and a ferroelectric material layer on the gate insulating layer. Portions of the upper surface of the substrate between the first side and the ferroelectric gate stack and between the second side and the ferroelectric gate stack are doped with n-type impurities, and portions of the upper surface of the substrate between the third side and the ferroelectric gate stack and between the fourth side and the ferroelectric gate stack are doped with p-type impurities. A presence of both n and p channels in a same region increases a capacitance and voltage gain of the ferroelectric gate stack.
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公开(公告)号：US10586849B2
公开(公告)日：2020-03-10
申请号：US16434711
申请日：2019-06-07
发明人： Yulong Li , Paul M. Solomon , Siyuranga Koswatta
IPC分类号： H01L29/10 , H01L29/06 , H01L29/66 , H01L29/68 , H01L29/49 , H01L29/205 , H01L29/80 , H01L27/11521 , H01L27/1159 , H01L29/51 , H01L29/78 , H01L21/28 , H01L29/165 , H01L27/108 , H01L29/788 , H01L27/24 , H01L29/423
摘要： A method and resulting structures for a semiconductor device includes forming a source terminal of a semiconductor fin on a substrate. An energy barrier is formed on a surface of the source terminal. A channel is formed on a surface of the energy barrier, and a drain terminal is formed on a surface of the channel. The drain terminal and the channel are recessed on either sides of the channel, and the energy barrier is etched in recesses formed by the recessing. The source terminal is recessed using timed etching to remove a portion of the source terminal in the recesses formed by etching the energy barrier. A first bottom spacer is formed on a surface of the source terminal and a sidewall of the semiconductor fin, and a gate stack is formed on the surface of the first bottom spacer.
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公开(公告)号：US10571331B2
公开(公告)日：2020-02-25
申请号：US15856776
申请日：2017-12-28
发明人： Jason S. Orcutt , Paul M. Solomon
摘要： A photoreceiver device includes a light detector connected between a power supply node and a first node, and first to third switching elements. The light detector is configured to detect an incident optical data signal, and to output photocurrent corresponding to a magnitude of the optical data signal through the first node. The first switching element is connected between the first node and a ground node. The second switching element is connected between the power supply node and a second node. The third switching element is connected between the second node and the ground node. The third switching element has a control node connected to the first node.
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公开(公告)号：US20200027749A1
公开(公告)日：2020-01-23
申请号：US16272331
申请日：2019-02-11
发明人： Christine Armstrong , Matthew W. Copel , Yu Luo , Paul M. Solomon
IPC分类号： H01L21/3213 , H01L41/332 , H01L41/39 , H01L41/16 , H01L41/187 , H01L41/316 , H01L21/02
摘要： A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.
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公开(公告)号：US20190221559A1
公开(公告)日：2019-07-18
申请号：US16360690
申请日：2019-03-21
发明人： Jin-Ping Han , Yulong Li , Dennis M. Newns , Paul M. Solomon , Xiao Sun
IPC分类号： H01L27/06 , H01L27/1159 , H01L21/28 , H01L27/11507
CPC分类号： H01L27/0629 , H01L27/11507 , H01L27/1159 , H01L29/0649 , H01L29/40111 , H01L29/4966 , H01L29/516
摘要： A metal-insulator-metal (MIM) capacitor structure includes source and drain regions formed within a semiconductor substrate, a first conducting layer formed over the source and drain regions, and a dielectric layer formed over the first conducting layer. The MIM capacitor structure further includes a second conducting layer formed over the dielectric layer, and a sidewall dielectric formed adjacent the first conducting layer and the dielectric layer. An electric field is created indirectly through the sidewall dielectric to an adjacent field effect transistor (FET) channel in the semiconductor substrate.
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公开(公告)号：US10269580B2
公开(公告)日：2019-04-23
申请号：US15804394
申请日：2017-11-06
发明人： Christine Armstrong , Matthew W. Copel , Yu Luo , Paul M. Solomon
IPC分类号： H01L41/16 , H01L21/3213 , H01L41/332 , H01L41/39 , H01L41/187 , H01L41/316 , H01L21/02
摘要： A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
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公开(公告)号：US20180233378A1
公开(公告)日：2018-08-16
申请号：US15405546
申请日：2017-01-13
发明人： Christine Armstrong , Matthew W. Copel , Yu Luo , Paul M. Solomon
IPC分类号： H01L21/3213 , H01L21/02 , H01L41/332
CPC分类号： H01L21/32134 , H01L21/0256 , H01L21/0262 , H01L41/16 , H01L41/187 , H01L41/316 , H01L41/332 , H01L41/39
摘要： A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.
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