-
公开(公告)号:US09093393B2
公开(公告)日:2015-07-28
申请号:US14083834
申请日:2013-11-19
发明人: Toru Suda
IPC分类号: H01L23/48 , H01L23/31 , H01L21/56 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/14 , H01L23/556 , H01L23/498
CPC分类号: H01L23/3157 , H01L21/563 , H01L23/147 , H01L23/3128 , H01L23/3192 , H01L23/49827 , H01L23/49833 , H01L23/49838 , H01L23/556 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/00 , H01L25/0657 , H01L25/50 , H01L2224/02245 , H01L2224/02255 , H01L2224/0226 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05552 , H01L2224/05554 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/06051 , H01L2224/06155 , H01L2224/06156 , H01L2224/11462 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/26145 , H01L2224/26175 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/81193 , H01L2224/92125 , H01L2224/92225 , H01L2224/92247 , H01L2224/94 , H01L2225/0651 , H01L2225/06513 , H01L2225/06568 , H01L2924/00014 , H01L2924/10162 , H01L2924/10253 , H01L2924/14 , H01L2924/15311 , H01L2924/157 , H01L2924/181 , H01L2924/19107 , H01L2924/00012 , H01L2224/03 , H01L2224/11 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor device includes a rectangular lower semiconductor element; a plurality of external electrodes located in a pattern on the lower semiconductor element along sides thereof; a plurality of internal electrodes electrically connected to the plurality of external electrodes via a plurality of line patterns respectively and located on the lower semiconductor element in a pattern; dams provided in such a pattern that each of the dams encloses one or at least two external electrodes among the plurality of external electrodes; an upper semiconductor element mounted on the lower semiconductor element such that a plurality of terminals on the upper semiconductor element are electrically connected to the plurality of internal electrodes respectively; and a resin potted to flow to a space between the lower semiconductor element and the upper semiconductor element.
摘要翻译: 半导体器件包括矩形下半导体元件; 多个外部电极,沿其侧面位于下部半导体元件上的图案中; 多个内部电极经由多个线图案电连接到所述多个外部电极,并以图案位于所述下部半导体元件上; 堤坝以这样的图案提供,使得每个坝围绕多个外部电极中的一个或至少两个外部电极; 上半导体元件,其安装在所述下半导体元件上,使得所述上半导体元件上的多个端子分别电连接到所述多个内部电极; 以及被封装以流到下半导体元件和上半导体元件之间的空间的树脂。