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公开(公告)号：US08558252B2
公开(公告)日：2013-10-15
申请号：US13219486
申请日：2011-08-26
IPC分类号： H01L29/18 , H01L29/205 , H01L33/00 , H01L21/00
CPC分类号： H01L33/504 , H01L33/0095 , H01L2933/0041
摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.
摘要翻译： 用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。 不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。 该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。 在一个实施例中，将基础波长转换材料施加到半导体器件。 一部分碱转换材料被去除。 在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。
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公开(公告)号：US20130049021A1
公开(公告)日：2013-02-28
申请号：US13219486
申请日：2011-08-26
CPC分类号： H01L33/504 , H01L33/0095 , H01L2933/0041
摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.
摘要翻译： 用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。 不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。 该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。 在一个实施例中，将基础波长转换材料施加到半导体器件。 一部分碱转换材料被去除。 在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。
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3.发明申请公开(公告)号：US20100140637A1
公开(公告)日：2010-06-10
申请号：US12329722
申请日：2008-12-08
申请人： Matthew Donofrio , John Edmond , James Ibbetson , Ting Li
发明人： Matthew Donofrio , John Edmond , James Ibbetson , Ting Li
CPC分类号： H01L33/38 , H01L33/145 , H01L33/42 , H01L33/46
摘要： A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
摘要翻译： 公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。 透明导电氧化物层具有比所述活性结构更大的占地面积。 电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。
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4.发明申请SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME 有权具有反射结构的半导体发光二极管及其制造方法公开(公告)号：US20090283787A1
公开(公告)日：2009-11-19
申请号：US12463709
申请日：2009-05-11
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
摘要翻译： 发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触 该欧姆接触n型层并且还在第一面上延伸。 阳极接触件和/或阴极接触件还可以在第一面上提供混合反射结构，其被配置为基本上将从第一面部露出的所有光反射回第一面。 还描述了相关的制造方法。
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公开(公告)号：US09640737B2
公开(公告)日：2017-05-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
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公开(公告)号：US20120193660A1
公开(公告)日：2012-08-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
摘要翻译： 水平发光二极管包括在同一面上的阳极和阴极触点以及具有倾斜侧壁的透明衬底。 在倾斜侧壁上设置平均当量粒径d50为至少约10μm的保形荧光体层。 可以提供高纵横比基底。 LED可以直接连接到底座。
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公开(公告)号：US08643039B2
公开(公告)日：2014-02-04
申请号：US13023788
申请日：2011-02-09
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
摘要翻译： 发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触 该欧姆接触n型层并且还在第一面上延伸。 阳极和阴极接触件在第一面上延伸以共同覆盖基本上所有的第一面。 可以在触点之间提供小的间隙。
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8.发明授权Semiconductor light emitting diodes having reflective structures and methods of fabricating same 有权具有反射结构的半导体发光二极管及其制造方法公开(公告)号：US08368100B2
公开(公告)日：2013-02-05
申请号：US12463709
申请日：2009-05-11
CPC分类号： H01L33/405 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/46 , H01L33/486 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
摘要翻译： 发光二极管包括具有第一和第二相对面的二极管区域，其中包括n型层和p型层，与p型层欧姆接触并在第一面上延伸的阳极接触，以及阴极接触 该欧姆接触n型层并且还在第一面上延伸。 阳极接触件和/或阴极接触件还可以在第一面上提供混合反射结构，该混合反射结构被构造成基本上将从第一面反射出来的所有光反射回第一面。 还描述了相关的制造方法。
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公开(公告)号：USD673126S1
公开(公告)日：2012-12-25
申请号：US29396911
申请日：2011-07-08
申请人： Matthew Donofrio , James Ibbetson
设计人： Matthew Donofrio , James Ibbetson
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10.发明授权公开(公告)号：US08017963B2
公开(公告)日：2011-09-13
申请号：US12329722
申请日：2008-12-08
申请人： Matthew Donofrio , John Edmond , James Ibbetson , Ting Li
发明人： Matthew Donofrio , John Edmond , James Ibbetson , Ting Li
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/145 , H01L33/42 , H01L33/46
摘要： A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
摘要翻译： 公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。 透明导电氧化物层具有比所述活性结构更大的占地面积。 电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。
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