公开(公告)号：US20240288773A1

公开(公告)日：2024-08-29

申请号：US18636755

申请日：2024-04-16

Applicant: JSR CORPORATION

Inventor： Masato DOBASHI ,  Hiroyuki KOMATSU ,  Eiji YONEDA ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0752 ,  G03F7/322 ,  H01L21/0275

Abstract: A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20240255852A1

公开(公告)日：2024-08-01

申请号：US18435001

申请日：2024-02-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Eiji YONEDA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

CPC classification number: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

Abstract: A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

公开(公告)号：US20240231231A1

公开(公告)日：2024-07-11

申请号：US18440124

申请日：2024-02-13

Applicant: JSR CORPORATION

Inventor： Daiki TATSUBO ,  Tomoharu KAWAZU ,  Hiroyuki MIYAUCHI ,  Yuya HAYASHI ,  Takashi KATAGIRI ,  Ryotaro TANAKA

IPC: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/308 ,  H01L21/311

CPC classification number: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/3081 ,  H01L21/31116

Abstract: A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.