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公开(公告)号：US09721782B2
公开(公告)日：2017-08-01
申请号：US13157122
申请日：2011-06-09
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
IPC分类号： B05C11/00 , H01L21/306 , H01L21/3065 , H01L21/02 , H01L21/3213 , H01L21/311 , H01L21/67 , C23C16/455
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
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公开(公告)号：US07981307B2
公开(公告)日：2011-07-19
申请号：US11866392
申请日：2007-10-02
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。
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公开(公告)号：US20090084758A1
公开(公告)日：2009-04-02
申请号：US11866392
申请日：2007-10-02
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
IPC分类号： B44C1/22 , C25F3/00 , H01L21/3065
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。
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公开(公告)号：US20110232566A1
公开(公告)日：2011-09-29
申请号：US13157122
申请日：2011-06-09
申请人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
发明人： Jack Chen , Andrew D. Bailey, III , Iqbal Shareef
IPC分类号： B05C11/10
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。
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5.发明授权Offset correction techniques for positioning substrates within a processing chamber 有权用于将衬底定位在处理室内的偏移校正技术公开(公告)号：US08135485B2
公开(公告)日：2012-03-13
申请号：US12237155
申请日：2008-09-24
申请人： Jack Chen , Andrew D. Bailey, III , Ben Mooring , Stephen J Cain
发明人： Jack Chen , Andrew D. Bailey, III , Ben Mooring , Stephen J Cain
CPC分类号： H01L21/681 , H01L21/68
摘要： A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.
摘要翻译： 提供了一种将基板对准支撑机构的处理中心的方法。 该方法包括在基板处理之后确定基板厚度，该基板在多个取向并且距离基板的几何中心的多个径向距离处。 该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。 该方法还包括为处理速率创建偏心图，其表示基本上同心的圆，其点是具有基本上第一处理速率的偏心图的圆周。 该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。 该方法还包括向一组机器人手臂提供一组参数，从而使得该组机器人臂将由支撑机构支撑的另一个基板与处理中心对准。
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6.发明授权Apparatus for defining regions of process exclusion and process performance in a process chamber 有权用于限定处理室中的工艺排除区域和工艺性能的装置公开(公告)号：US07575638B2
公开(公告)日：2009-08-18
申请号：US11701854
申请日：2007-02-02
IPC分类号： B05B5/025 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32568 , H01L21/68721
摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
摘要翻译： 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片，并且电极具有第二表面。 线性驱动器安装在基座上，连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。
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公开(公告)号：US07479236B2
公开(公告)日：2009-01-20
申请号：US11612355
申请日：2006-12-18
申请人： Jack Chen , Andrew D Bailey, III , Ben Mooring , Stephen J. Cain
发明人： Jack Chen , Andrew D Bailey, III , Ben Mooring , Stephen J. Cain
CPC分类号： G05B19/41875 , G05B2219/37398 , G05B2219/45031 , G05B2219/50057 , Y02P90/22
摘要： A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.
摘要翻译： 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点，其通过以一组取向和距衬底几何中心的一组距离测量薄膜衬底的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括为该组取向生成蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图，其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。
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8.发明申请DYNAMIC ALIGNMENT OF WAFERS USING COMPENSATION VALUES OBTAINED THROUGH A SERIES OF WAFER MOVEMENTS 有权使用通过一系列波浪运动获得的补偿值的波形的动态对齐公开(公告)号：US20090279989A1
公开(公告)日：2009-11-12
申请号：US12116897
申请日：2008-05-07
申请人： Scott Wong , Jeffrey Lin , Andrew D. Bailey, III , Jack Chen , Benjamin W. Mooring , Chung Ho Huang
发明人： Scott Wong , Jeffrey Lin , Andrew D. Bailey, III , Jack Chen , Benjamin W. Mooring , Chung Ho Huang
IPC分类号： H01L21/67
CPC分类号： H01L21/68
摘要： Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.
摘要翻译： 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。
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9.发明授权Offset correction methods and arrangement for positioning and inspecting substrates 有权用于定位和检查基板的偏移校正方法和布置公开(公告)号：US07486878B2
公开(公告)日：2009-02-03
申请号：US11612370
申请日：2006-12-18
申请人： Jack Chen , Andrew D Bailey, III , Ben Mooring , Stephen J. Cain
发明人： Jack Chen , Andrew D Bailey, III , Ben Mooring , Stephen J. Cain
CPC分类号： H01L21/681 , H01L21/67259 , H01L21/67288
摘要： A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.
摘要翻译： 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的俯视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。
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10.发明授权Dynamic alignment of wafers using compensation values obtained through a series of wafer movements 有权使用通过一系列晶片移动获得的补偿值来动态地对准晶片公开(公告)号：US08185242B2
公开(公告)日：2012-05-22
申请号：US12116897
申请日：2008-05-07
申请人： Scott Wong , Jeffrey Lin , Andrew D. Bailey, III , Jack Chen , Benjamin W. Mooring , Chung Ho Huang
发明人： Scott Wong , Jeffrey Lin , Andrew D. Bailey, III , Jack Chen , Benjamin W. Mooring , Chung Ho Huang
CPC分类号： H01L21/68
摘要： Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.
摘要翻译： 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。
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