公开(公告)号：US09721782B2

公开(公告)日：2017-08-01

申请号：US13157122

申请日：2011-06-09

申请人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

发明人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC分类号： B05C11/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/67 ,  C23C16/455

CPC分类号： H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

公开(公告)号：US07981307B2

公开(公告)日：2011-07-19

申请号：US11866392

申请日：2007-10-02

申请人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

发明人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC分类号： B44C1/22 ,  H01L21/00

CPC分类号： H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。

公开(公告)号：US20110232566A1

公开(公告)日：2011-09-29

申请号：US13157122

申请日：2011-06-09

申请人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

发明人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC分类号： B05C11/10

CPC分类号： H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。

公开(公告)号：US20090084758A1

公开(公告)日：2009-04-02

申请号：US11866392

申请日：2007-10-02

申请人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

发明人： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC分类号： B44C1/22 ,  C25F3/00 ,  H01L21/3065

CPC分类号： H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

摘要翻译： 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。

公开(公告)号：US20060113290A1

公开(公告)日：2006-06-01

申请号：US11001954

申请日：2004-12-01

申请人： Iqbal Shareef ,  Igor Landau ,  David Markle ,  Somit Talwar ,  Michael Thompson ,  Ivelin Angelov ,  Senquan Zhou

发明人： Iqbal Shareef ,  Igor Landau ,  David Markle ,  Somit Talwar ,  Michael Thompson ,  Ivelin Angelov ,  Senquan Zhou

IPC分类号： B23K26/00 ,  B23K26/02

CPC分类号： B23K26/703

摘要： A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.

摘要翻译： 公开了一种用于在激光热处理（LTP）期间支撑晶片并在晶片上保持恒定的背景温度的卡盘。 卡盘包括散热器和加热器模块形式的热质量。 加热器模块与散热器热连通，但是通过绝热层在物理上与其分离。 热绝缘体保持至少等于由激光器传递的最大功率的基本恒定的功率损耗，而不是由辐射和对流损失。 顶板布置在加热器模块的顶部，支撑要处理的晶片，并提供污染屏障。 加热器模块耦合到电源，其适于向加热器模块提供变化量的功率，以将加热器模块保持在恒定的背景温度，即使当晶片经历来自LTP激光束的空间上和时间上变化的热负载时。 因此，来自激光器的热量通过加热器模块和绝缘体层从晶片传递到散热器。 在没有激光加热的情况下，根据需要也从加热器模块转移到晶片以保持恒定的背景温度。

公开(公告)号：US09175808B2

公开(公告)日：2015-11-03

申请号：US13220890

申请日：2011-08-30

申请人： Mark Taskar ,  Iqbal Shareef

发明人： Mark Taskar ,  Iqbal Shareef

IPC分类号： B60B15/04 ,  F17D1/00 ,  B08B15/00 ,  B08B15/04

CPC分类号： F17D1/00 ,  B08B15/002 ,  B08B15/04 ,  F17C1/00 ,  F17C2221/031 ,  G01M3/22 ,  Y10T137/0318 ,  Y10T137/6851 ,  Y10T137/7736 ,  Y10T137/7761 ,  Y10T137/86107

摘要： A method and apparatus is provided for decreasing the scrubber exhaust from gas panels, lower the cost of operation, lower the facilitation cost and power consumption by increasing the air velocity in areas of high potential risk of ignition. The apparatus includes a supply of compressed dry air (CDA) through the tubing with individual dispersion nozzles. The CDA dispersion nozzles can be installed at various key locations in order to provide additional ventilation turbulence and reduce potential dead zones inside the gas panel. Aspects of the invention help to save the energy and protect the environment by reducing the power consumption. In addition human safety shall be improved by minimizing the potential risk of ignition.

摘要翻译： 提供一种方法和装置，用于减少来自气体面板的洗涤器排气，降低操作成本，通过在高潜在的点火风险区域中增加空气速度来降低便利成本和功率消耗。 该设备包括通过具有各个分散喷嘴的管道供应压缩干燥空气（CDA）。 CDA分散喷嘴可以安装在各种关键位置，以便提供额外的通风湍流并减少气体面板内的潜在死区。 本发明的方面有助于通过降低功耗来节省能源和保护环境。 另外，通过最小化潜在的点火风险，可以改善人身安全。

公开(公告)号：US09091397B2

公开(公告)日：2015-07-28

申请号：US13549344

申请日：2012-07-13

申请人： Iqbal Shareef ,  Piyush Agarwal ,  Evangelos Spyropoulos ,  Mark Taskar

发明人： Iqbal Shareef ,  Piyush Agarwal ,  Evangelos Spyropoulos ,  Mark Taskar

IPC分类号： E03B11/00 ,  F17D1/00

CPC分类号： F17D1/00 ,  F17C1/00 ,  F17C2270/0518 ,  Y10T137/0318 ,  Y10T137/87249

摘要： Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.

摘要翻译： 在等离子体处理室的多个多区域气体供给室中共享气体面板的装置和方法。 每个多区气体进料室设置有其自己的多区气体进料装置，以将进入的气流可调节地分流到每个室中，并且将不同的气流提供给多区气体进料室的不同区域。

公开(公告)号：US20060237403A1

公开(公告)日：2006-10-26

申请号：US11112647

申请日：2005-04-22

申请人： Iqbal Shareef ,  Boris Grek ,  Michael Thompson

发明人： Iqbal Shareef ,  Boris Grek ,  Michael Thompson

IPC分类号： B23K26/00

CPC分类号： B23K26/703

摘要： A heat shield (10) that facilitates thermally processing a substrate (22) with a radiation beam (150) is disclosed. The heat shield is in the form of a cooled plate adapted to allow the radiation beam to communicate with the substrate upper surface (20) over a radiation beam path (BP), either through an aperture or a transparent region. The heat shield has an operating position that forms a relatively small gap (170) between the lower surface (54) of the heat shield and the upper surface of the wafer. The gap is sized such that the formation of convection cells (200) is suppressed during substrate surface irradiation. If convection cells do form, they are kept out of the radiation beam path. This prevents the radiation beam from wandering from the desired radiation beam path, which in turn allows for uniform heating of the substrate during thermal processing.

摘要翻译： 公开了一种有助于用辐射束（150）热处理衬底（22）的隔热罩（10）。 隔热板是冷却板的形式，其适于允许辐射束通过光圈或透明区域在辐射束路径（BP）上与衬底上表面（20）连通。 隔热罩具有在隔热罩的下表面（54）和晶片的上表面之间形成相对小的间隙（170）的操作位置。 间隙的尺寸使得在衬底表面照射期间抑制形成对流电池（200）。 如果形成对流电池，则它们被保持在辐射束路径之外。 这防止辐射束从所需的辐射束路径移动，这又允许在热处理期间对衬底的均匀加热。

公开(公告)号：US20130255782A1

公开(公告)日：2013-10-03

申请号：US13549344

申请日：2012-07-13

申请人： Iqbal Shareef ,  Piyush Agarwal ,  Evangelos Spyropoulos ,  Mark Taskar

发明人： Iqbal Shareef ,  Piyush Agarwal ,  Evangelos Spyropoulos ,  Mark Taskar

IPC分类号： F17D1/00

CPC分类号： F17D1/00 ,  F17C1/00 ,  F17C2270/0518 ,  Y10T137/0318 ,  Y10T137/87249

摘要： Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.

摘要翻译： 在等离子体处理室的多个多区域气体供给室中共享气体面板的装置和方法。 每个多区气体进料室设置有其自己的多区气体进料装置，以将进入的气流可调节地分流到每个室中，并且将不同的气流提供给多区气体进料室的不同区域。

公开(公告)号：US20130255781A1

公开(公告)日：2013-10-03

申请号：US13431946

申请日：2012-03-27

申请人： Mark Taskar ,  Iqbal Shareef

发明人： Mark Taskar ,  Iqbal Shareef

IPC分类号： B01F5/04

CPC分类号： B01F3/026 ,  Y10T137/0318 ,  Y10T137/87249 ,  Y10T137/87281 ,  Y10T137/87652 ,  Y10T137/87885

摘要： Methods and apparatus for shared gas panel for supplying a process gas to a plurality of process modules are disclosed. The shared gas panel includes a plurality of mixing valves and at least two mixing manifolds for a given mixing valve to service at least two process modules. The mixing manifolds are disposed on a given plane and staggered to save space. Components of the shared gas panel are also stacked vertically in order to reduce volume of the shared gas panel enclosure. Components are optimized such that the two mixing manifolds coupled to the given mixing valve receive equal mass flow to eliminate matching issues.

摘要翻译： 公开了用于向多个处理模块提供处理气体的共用气体面板的方法和装置。 共用气体面板包括多个混合阀和用于给定混合阀的至少两个混合歧管，以用于至少两个过程模块。 混合歧管布置在给定的平面上并交错以节省空间。 共用气体面板的组件也垂直堆叠，以减少共用气体面板外壳的体积。 优化组件使得耦合到给定混合阀的两个混合歧管获得相等的质量流量以消除匹配问题。