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1.发明授权Apparatus for defining regions of process exclusion and process performance in a process chamber 有权用于限定处理室中的工艺排除区域和工艺性能的装置公开(公告)号：US07575638B2
公开(公告)日：2009-08-18
申请号：US11701854
申请日：2007-02-02
IPC分类号： B05B5/025 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32568 , H01L21/68721
摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
摘要翻译： 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片，并且电极具有第二表面。 线性驱动器安装在基座上，连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。
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公开(公告)号：US20090166326A1
公开(公告)日：2009-07-02
申请号：US11758584
申请日：2007-06-05
IPC分类号： C23F1/00
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译： 这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的衬底支撑件。 等离子体处理室还包括围绕衬底支撑件的底部边缘电极。 底部边缘电极和基底支撑件通过底部介电环彼此电隔离。 面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。 等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。 顶边电极电接地。 面向衬底的顶边电极的表面被顶部薄介电层覆盖。 顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。
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公开(公告)号：US09184043B2
公开(公告)日：2015-11-10
申请号：US11758584
申请日：2007-06-05
IPC分类号： H01J37/32 , H01L21/00 , H01L21/311 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/02087 , H01J37/32009 , H01J37/32082 , H01J37/32559 , H01J37/32642 , H01J37/32862 , H01L21/02057 , H01L21/31116 , H01L21/31138 , H01L21/32136
摘要： The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译： 这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的衬底支撑件。 等离子体处理室还包括围绕衬底支撑件的底部边缘电极。 底部边缘电极和基底支撑件通过底部介电环彼此电隔离。 面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。 等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。 顶边电极电接地。 面向衬底的顶边电极的表面被顶部薄介电层覆盖。 顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。
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4.发明申请Apparatus for defining regions of process exclusion and process performance in a process chamber 有权用于限定处理室中的工艺排除区域和工艺性能的装置公开(公告)号：US20080185105A1
公开(公告)日：2008-08-07
申请号：US11701854
申请日：2007-02-02
申请人： Andrew D. Bailey , Jack Chen , Yunsang Kim , Gregory S. Sexton
发明人： Andrew D. Bailey , Jack Chen , Yunsang Kim , Gregory S. Sexton
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32568 , H01L21/68721
摘要： Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
摘要翻译： 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片，并且电极具有第二表面。 线性驱动器安装在基座上，连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向，同时组件移动上电极，表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。
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5.发明授权Methods to remove films on bevel edge and backside of wafer and apparatus thereof 有权在晶片的斜边和背面去除薄膜的方法及其装置公开(公告)号：US08308896B2
公开(公告)日：2012-11-13
申请号：US13053037
申请日：2011-03-21
申请人： Yunsang Kim , Andrew D. Bailey, III
发明人： Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C25/68 , C03C15/00
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： A method of cleaning a bevel edge of a substrate in an etch processing chamber is provided. The method includes placing a substrate on a substrate support in a processing chamber. The method also includes flowing a cleaning gas through a gas feed located near a center of a gas distribution plate, disposed at a distance from the substrate support. The method further includes generating a cleaning plasma near a bevel edge of the substrate to clean the bevel edge by powering a bottom edge electrode or a top edge electrode with a RF power source and grounding the edge electrode that is not powered by the RF power source, the bottom edge electrode surrounds the substrate support and the top edge electrode surrounds the gas distribution plate.
摘要翻译： 提供了一种在蚀刻处理室中清洁衬底的斜边缘的方法。 该方法包括将衬底放置在处理室中的衬底支撑件上。 该方法还包括使清洁气体流过设置在与衬底支撑件相距一定距离处的气体分配板的中心附近的气体进料。 该方法还包括在衬底的斜边缘附近产生清洁等离子体，以通过用RF电源为底部边缘电极或顶部边缘电极供电来清洁斜面边缘，并且将不由RF电源供电的边缘电极接地 底部边缘电极围绕基板支撑件，并且顶部边缘电极围绕气体分配板。
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6.发明授权Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber 有权用于保护与处理室中的工艺性能区域相邻的工艺排除区域的方法和设备公开(公告)号：US08268116B2
公开(公告)日：2012-09-18
申请号：US11818621
申请日：2007-06-14
申请人： Andrew D. Bailey, III , Yunsang Kim
发明人： Andrew D. Bailey, III , Yunsang Kim
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32385 , H01J37/321 , H01J37/32366 , H01J37/32706 , H01L21/02087 , H01L21/67069 , H01L21/6715
摘要： Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.
摘要翻译： 装置和方法在处理工艺性能的边缘环境区域期间保护衬底的中心过程排除区域。 去除不需要的材料仅来自边缘环境区域，而中央设备区域被保护免受损坏。 场强被配置为保护中心区域免受处理室中的带电粒子等离子体的影响，并且仅促进从边缘环境区域移除不需要的材料。 磁场配置有与中央和边缘环境区域之间的边界相邻的峰值。 强场梯度从径向远离边界并远离中心区域从峰值延伸，以将带电粒子从中心区域排斥。 磁场的强度和位置可以通过磁体部分的轴向相对运动来调节，并且磁通板被配置为重定向磁场以达到期望的保护。
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公开(公告)号：US20090272402A1
公开(公告)日：2009-11-05
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： B08B6/00
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译： 提供了一种在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。
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8.发明申请GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER 有权气体调节控制边缘蚀刻等离子体室的边缘排除公开(公告)号：US20090188627A1
公开(公告)日：2009-07-30
申请号：US12021177
申请日：2008-01-28
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。
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公开(公告)号：US20120305189A1
公开(公告)日：2012-12-06
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。
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公开(公告)号：US08298433B2
公开(公告)日：2012-10-30
申请号：US12648264
申请日：2009-12-28
IPC分类号： C23F1/00 , H01L21/3065 , C23C16/505
CPC分类号： H01L21/02087 , H01J37/32541 , H01J37/3255 , H05H1/2406 , H05H2001/2412
摘要： A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.
摘要翻译： 提供了一种用于从衬底除去边缘聚合物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除边缘聚合物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将RF场施加到空腔，以从惰性气体和处理气体产生等离子体。
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