摘要:
A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要:
A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要:
A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.
摘要:
A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要:
Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.
摘要:
Methods and apparatus for shared gas panel for supplying a process gas to a plurality of process modules are disclosed. The shared gas panel includes a plurality of mixing valves and at least two mixing manifolds for a given mixing valve to service at least two process modules. The mixing manifolds are disposed on a given plane and staggered to save space. Components of the shared gas panel are also stacked vertically in order to reduce volume of the shared gas panel enclosure. Components are optimized such that the two mixing manifolds coupled to the given mixing valve receive equal mass flow to eliminate matching issues.
摘要:
Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. The chamber employs heat pipe principles to equalize temperature differences in the module. The spatially varying thermal load is quickly made uniform by thermal conductivity of the heater module. Heatsinking a constant amount of heat from the bottom of the heater module accommodates large temporal variations in the thermal heat load. Constant heat loss is preferably made to be at least as large as the maximum variation in the input heat load, less heat lost through radiation and convection, thus requiring a heat input through electrical heating elements. This allows for temperature control of the chuck, and hence the substrate.
摘要:
A method and apparatus is provided for decreasing the scrubber exhaust from gas panels, lower the cost of operation, lower the facilitation cost and power consumption by increasing the air velocity in areas of high potential risk of ignition. The apparatus includes a supply of compressed dry air (CDA) through the tubing with individual dispersion nozzles. The CDA dispersion nozzles can be installed at various key locations in order to provide additional ventilation turbulence and reduce potential dead zones inside the gas panel. Aspects of the invention help to save the energy and protect the environment by reducing the power consumption. In addition human safety shall be improved by minimizing the potential risk of ignition.
摘要:
Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.
摘要:
A heat shield (10) that facilitates thermally processing a substrate (22) with a radiation beam (150) is disclosed. The heat shield is in the form of a cooled plate adapted to allow the radiation beam to communicate with the substrate upper surface (20) over a radiation beam path (BP), either through an aperture or a transparent region. The heat shield has an operating position that forms a relatively small gap (170) between the lower surface (54) of the heat shield and the upper surface of the wafer. The gap is sized such that the formation of convection cells (200) is suppressed during substrate surface irradiation. If convection cells do form, they are kept out of the radiation beam path. This prevents the radiation beam from wandering from the desired radiation beam path, which in turn allows for uniform heating of the substrate during thermal processing.