Method of in situ monitoring of supercritical fluid process conditions
    9.
    发明授权
    Method of in situ monitoring of supercritical fluid process conditions 失效
    超临界流体工艺条件的现场监测方法

    公开(公告)号:US06927393B2

    公开(公告)日:2005-08-09

    申请号:US10320835

    申请日:2002-12-16

    IPC分类号: G01N21/35 G01J5/02

    CPC分类号: G01N21/359 G01N21/3504

    摘要: A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

    摘要翻译: 提供了一种用于半导体制造工艺的工艺参数的原位监测和分析的方法和装置,包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量,并且确定压力容器中的流体的组成,允许用户基于测量的组成来控制工艺参数。