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公开(公告)号：US08691687B2
公开(公告)日：2014-04-08
申请号：US12683465
申请日：2010-01-07
CPC分类号： H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.
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公开(公告)号：US20110163449A1
公开(公告)日：2011-07-07
申请号：US12683465
申请日：2010-01-07
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L23/485 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.
摘要翻译： 根据本发明的一个方面，提供了一种用于制造具有接触通孔的半导体元件的方法。 在这种方法中，可以在电介质层中形成孔以至少部分地暴露包括半导体或导电材料中的至少一种的区域。 种子层可以沉积在电介质层的主表面上并且在孔内的表面上。 在一个实施方案中，种子层可以包括选自铱，锇，钯，铂，铑和钌的金属。 基本上由钴组成的层可以电镀在孔内的种子层上，以形成与该区域导电连通的接触通孔。
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公开(公告)号：US07501345B1
公开(公告)日：2009-03-10
申请号：US12057688
申请日：2008-03-28
申请人： Veeraraghaven S. Basker , Hariklia Deligianni , Balasubramanian S. Pranatharthi Haran , James J. Kelly , Christian Lavoie , George G. Totir
发明人： Veeraraghaven S. Basker , Hariklia Deligianni , Balasubramanian S. Pranatharthi Haran , James J. Kelly , Christian Lavoie , George G. Totir
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , C23C18/1642 , C23C18/54 , H01L21/288
摘要： Silicide formation processes are disclosed that use an electrochemical displacement reaction in the absence of an externally applied current or potential. In an embodiment, a method for forming an integrated circuit comprises: depositing a metallic material upon select areas of a semiconductor topography comprising silicon by contacting the semiconductor topography with an aqueous solution comprising an acid and a metal salt to cause an electrochemical displacement reaction in the absence of an externally applied current or potential, wherein a concentration of the metal salt in the aqueous solution is about 0.01 millimolar to about 0.5 millimolar; and annealing the metallic material to form a silicide upon the areas of the semiconductor topography comprising the silicon.
摘要翻译： 公开了在没有外部施加的电流或电位的情况下使用电化学置换反应的硅化物形成方法。 在一个实施例中，一种用于形成集成电路的方法包括：通过使半导体形貌与包含酸和金属盐的水溶液接触，在包含硅的半导体形貌的选择区域上沉积金属材料，以引起电化学位移反应 不存在外部施加的电流或电势，其中金属盐在水溶液中的浓度为约0.01毫摩尔至约0.5毫摩尔; 并且在包括硅的半导体形貌的区域上退火金属材料以形成硅化物。
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公开(公告)号：US5100464A
公开(公告)日：1992-03-31
申请号：US491282
申请日：1990-03-09
申请人： James J. Kelly , Thomas P. Barnett
发明人： James J. Kelly , Thomas P. Barnett
CPC分类号： C22B7/02 , C22B1/24 , C22B1/242 , C22B7/04 , Y02P10/212
摘要： Steel mill by-product material briquettes or pellets and processes for making the same that results in a briquetted or cold agglomeration pelleted material made from by-product material and a binder comprising gypsum-free cement and sucrose residue for the briquettes or a binder comprising gypsum-free cement and, if required, a sucrose residue for the pellets. These briquettes or pellets are made using a cold roll briquetting process or a cold agglomeration pelletizing process at ambient temperature and can be fed directly into a blast furnace thereby recycling by-product materials while completely by-passing the environmentally adverse and costly sintering process or landfill disposal process.
摘要翻译： 钢铁副产品材料团块或颗粒以及制造相同的方法，其导致由副产物材料制成的压块或冷凝结的颗粒状材料，以及包含用于压块的不含石膏的水泥和蔗糖残渣的粘合剂或包含石膏的粘合剂 - 如果需要，可以使用颗粒的蔗糖残渣。 这些团块或颗粒是在环境温度下使用冷轧压块工艺或冷结块造粒工艺制成的，并且可以直接进料到高炉中，从而再循环副产品材料，同时完全绕过环境不利和昂贵的烧结过程或填埋 处理过程。
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公开(公告)号：US4123949A
公开(公告)日：1978-11-07
申请号：US833118
申请日：1977-09-14
IPC分类号： F16D3/58 , F16F15/305 , F16F15/30 , F16D3/14
CPC分类号： F16F15/305 , F16D3/58 , Y02E60/16 , Y10T74/2132
摘要： The inertial energy storage device of the present invention comprises a composite ring formed of circumferentially wound resin-impregnated filament material, a flanged hollow metal hub concentrically disposed in the ring, and a plurality of discrete filament bandsets coupling the hub to the ring. Each bandset is formed of a pair of parallel bands affixed to the hub in a spaced apart relationship with the axis of rotation of the hub being disposed between the bands and with each band being in the configuration of a hoop extending about the ring along a chordal plane thereof. The bandsets are disposed in an angular relationship with one another so as to encircle the ring at spaced-apart circumferential locations while being disposed in an overlapping relationship on the flanges of the hub. The energy storage device of the present invention has the capability of substantial energy storage due to the relationship of the filament bands to the ring and the flanged hub.
摘要翻译： 本发明的惯性能量储存装置包括由圆周缠绕的树脂浸渍的长丝材料形成的复合环，同心地设置在环中的带凸缘的中空金属毂，以及将毂与环相耦合的多个离散的长丝带。 每个带组由一对平行的带组成，以一定间隔的关系固定到轮毂上，轮毂的旋转轴线设置在带之间，并且每个带处于沿着弦的环绕环的构型 它的平面。 所述带组件彼此成角度关系地设置，以便在所述轮毂的所述凸缘上以重叠的关系设置在环形周向位置处环绕所述环。 本发明的储能装置由于灯丝带与环和凸缘毂的关系而具有大量能量储存的能力。
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公开(公告)号：US08435887B2
公开(公告)日：2013-05-07
申请号：US13151658
申请日：2011-06-02
IPC分类号： H01L21/288
CPC分类号： H01L21/76861 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.
摘要翻译： 公开了一种方法，其包括在衬底中的沟槽或通孔内形成铜互连。 形成铜互连包括在沟槽或通孔的壁上形成含钌种子层; 在含钌种子层暴露于相对于种子层氧化的环境之前，在含钌层上形成钴牺牲层; 并且将钴牺牲层与铜电镀溶液接触，所述铜电镀溶液溶解钴牺牲层并在未氧化的含钌种子层上电镀铜。 或者，可以用铂，氮化钨，氮化钛或钛或铱代替含钌种子层。 此外，钴牺牲层可以被锡，镉，铜或锰替代。
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公开(公告)号：US20090130845A1
公开(公告)日：2009-05-21
申请号：US11942393
申请日：2007-11-19
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C25D3/38 , C25D5/34 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L21/76877
摘要： A method of depositing copper directly onto a tantalum alloy layer of an on-chip copper interconnect structure, which includes electrodepositing copper from a neutral or basic electrolyte onto a surface of a tantalum alloy layer, in which the tantalum alloy layer is deposited on a substrate of the on-chip copper interconnect structure, and in which the copper nucleates onto the surface of the tantalum alloy layer without use of a seed layer to form a copper conductor.
摘要翻译： 一种将铜直接沉积在片上铜互连结构的钽合金层上的方法，该方法包括将铜从中性或碱性电解质电沉积到钽合金层的表面上，其中钽合金层沉积在基底上 的芯片铜互连结构，并且其中铜不会使用种子层成核形成铜导体的钽合金层的表面。
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公开(公告)号：US5068437A
公开(公告)日：1991-11-26
申请号：US65744
申请日：1987-06-24
申请人： John Kazan , James J. Kelly
发明人： John Kazan , James J. Kelly
IPC分类号： C07C209/32
CPC分类号： C07C209/325
摘要： 2-(p-chlorophenoxy)aniline is prepared in a process which provides improved yields and reduction of key impurities. A solution comprising 2-(p-chlorophenoxy)nitrobenzene, o-dichlorobenzene, and a platinum catalyst is prepared followed by the addition thereto of hydrazine hydrate in water. The temperature is maintained at 80.degree. C. to 110.degree. C. during the addition and until completion of the reaction. The reaction mixture is then cooled to 20.degree. C. to 40.degree. C. and filtration, washing, and distillation workup steps follow.
摘要翻译： 2-（对氯苯氧基）苯胺在提供提高产率和降低关键杂质的方法中制备。 制备包含2-（对氯苯氧基）硝基苯，邻二氯苯和铂催化剂的溶液，然后向水中加入水合肼。 在加入期间温度保持在80℃至110℃，直到反应完成。 然后将反应混合物冷却至20℃至40℃，然后过滤，洗涤和蒸馏后处理步骤。
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公开(公告)号：US20120309190A1
公开(公告)日：2012-12-06
申请号：US13151658
申请日：2011-06-02
IPC分类号： H01L21/288
CPC分类号： H01L21/76861 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese.
摘要翻译： 公开了一种方法，其包括在衬底中的沟槽或通孔内形成铜互连。 形成铜互连包括在沟槽或通孔的壁上形成含钌种子层; 在含钌种子层暴露于相对于种子层氧化的环境之前，在含钌层上形成钴牺牲层; 并且将钴牺牲层与铜电镀溶液接触，所述铜电镀溶液溶解钴牺牲层并在未氧化的含钌种子层上电镀铜。 或者，可以用铂，氮化钨，氮化钛或钛或铱代替含钌种子层。 此外，钴牺牲层可以被锡，镉，铜或锰替代。
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公开(公告)号：US07091832B1
公开(公告)日：2006-08-15
申请号：US10456167
申请日：2003-06-06
申请人： Jay A. Butterman , James J. Kelly
发明人： Jay A. Butterman , James J. Kelly
IPC分类号： G08B3/00
CPC分类号： G08B13/1672
摘要： A sound variation indication apparatus includes a comparison element, an interval checker, and an indication generator. The comparison element receives an audio signal and compares it to a check value to provide a status signal indicating a presence and absence of an expected sound input. The interval checker detects the status signal at predetermined intervals, to provide an interval output. The indication generator generates an indication if the interval output is an absence representation. A process of generating an indication on absence of a sound input includes providing an audio signal based on a sound input and comparing the audio signal to a check value, providing a status signal indicating a presence and absence of the sound input. A status signal value is determined at predetermined intervals, to provide an interval output. An indication is generated if the interval output is an absence representation.
摘要翻译： 声音变化指示装置包括比较元件，间隔检查器和指示发生器。 比较元件接收音频信号并将其与检查值进行比较，以提供指示有无预期声音输入的状态信号。 间隔检查器以预定间隔检测状态信号，以提供间隔输出。 如果间隔输出是缺席表示，则指示发生器产生指示。 在没有声音输入的情况下产生指示的过程包括基于声音输入提供音频信号并将音频信号与检查值进行比较，提供指示声音输入的存在和不存在的状态信号。 以预定间隔确定状态信号值，以提供间隔输出。 如果间隔输出是缺席表示，则生成指示。
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