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1.发明申请FORMING AIR GAPS IN MEMORY ARRAYS AND MEMORY ARRAYS WITH AIR GAPS THUS FORMED 有权在存储器阵列和存储器阵列中形成空气流量，形成空气GAPS公开(公告)号：US20130026600A1
公开(公告)日：2013-01-31
申请号：US13192763
申请日：2011-07-28
申请人： James Matthew , Gordon Haller , Ronald A. Weimer , John Hopkins , Vinayak K. Shamanna , Sanjeev Sapra
发明人： James Matthew , Gordon Haller , Ronald A. Weimer , John Hopkins , Vinayak K. Shamanna , Sanjeev Sapra
IPC分类号： H01L29/06 , H01L21/764
CPC分类号： H01L29/78 , H01L21/764 , H01L27/11524 , H01L27/1157
摘要： Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.
摘要翻译： 公开了在如此形成的具有气隙的存储器阵列和存储器阵列中形成气隙的方法。 一种这样的方法可以包括通过半导体上的电荷存储结构形成具有第一电介质的隔离区域，所述隔离区域延伸到半导体中; 在隔离区域和电荷存储结构上形成第二电介质; 并且在隔离区域中形成气隙，使得气隙通过电荷存储结构，并且第一电介质的厚度在气隙和第二电介质之间。
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2.发明授权Forming air gaps in memory arrays and memory arrays with air gaps thus formed 有权在由此形成的气隙的存储器阵列和存储器阵列中形成气隙公开(公告)号：US08569130B2
公开(公告)日：2013-10-29
申请号：US13192763
申请日：2011-07-28
申请人： James Mathew , Gordon Haller , Ronald A. Weimer , John Hopkins , Vinayak K. Shamanna , Sanjeev Sapra
发明人： James Mathew , Gordon Haller , Ronald A. Weimer , John Hopkins , Vinayak K. Shamanna , Sanjeev Sapra
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L21/764 , H01L27/11524 , H01L27/1157
摘要： Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.
摘要翻译： 公开了在如此形成的具有气隙的存储器阵列和存储器阵列中形成气隙的方法。 一种这样的方法可以包括通过半导体上的电荷存储结构形成具有第一电介质的隔离区域，所述隔离区域延伸到半导体中; 在隔离区域和电荷存储结构上形成第二电介质; 并且在隔离区域中形成气隙，使得气隙通过电荷存储结构，并且第一电介质的厚度在气隙和第二电介质之间。
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公开(公告)号：US20130009310A1
公开(公告)日：2013-01-10
申请号：US13610187
申请日：2012-09-11
申请人： Sanjeev Sapra , Janos Fucsko
发明人： Sanjeev Sapra , Janos Fucsko
CPC分类号： H01L21/76883 , H01L21/32115 , H01L21/32134
摘要： A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material. Resulting semiconductor device structures are also disclosed, as are compositions used to form the semiconductor device structures.
摘要翻译： 公开了去除金属氮化物材料的方法。 该方法包括形成包括暴露的金属材料和暴露的金属氮化物材料的半导体器件结构。 对半导体器件结构进行包含水，臭氧和至少一种添加剂的溶液，以比暴露的金属材料大得多的速率去除暴露的金属氮化物材料。 还公开了所得半导体器件结构，以及用于形成半导体器件结构的组合物。
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公开(公告)号：US20120326275A1
公开(公告)日：2012-12-27
申请号：US13607230
申请日：2012-09-07
IPC分类号： H01L29/92
CPC分类号： H01L28/90
摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.
摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。
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公开(公告)号：US08766347B2
公开(公告)日：2014-07-01
申请号：US13607230
申请日：2012-09-07
IPC分类号： H01L21/00
CPC分类号： H01L28/90
摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.
摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。
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公开(公告)号：US08546016B2
公开(公告)日：2013-10-01
申请号：US12986770
申请日：2011-01-07
申请人： Sanjeev Sapra , Niraj Rana
发明人： Sanjeev Sapra , Niraj Rana
CPC分类号： C11D7/08 , C11D11/0047 , H01L21/02063
摘要： A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.
摘要翻译： 一种清洗半导体结构的方法，包括使半导体结构体至少含有一种氟化合物的水溶液和至少一种强酸，所述水溶液的pH值小于1.在一个实施方案中，水溶液包括水 ，盐酸和氢氟酸，水与盐酸的体积比与氢氟酸的比例为1000：32.5：1。 该水溶液可用于形成具有比常规清洁溶液更好的接触电阻和改进的临界尺寸偏差的接触塞。
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7.发明申请METHODS OF FORMING TRENCHES IN SILICON AND A SEMICONDUCTOR DEVICE INCLUDING SAME 有权在硅中形成铁素体的方法和包括其中的半导体器件公开(公告)号：US20130037919A1
公开(公告)日：2013-02-14
申请号：US13206907
申请日：2011-08-10
申请人： Sanjeev Sapra , Cheng-Shun Chen , Hung-Ming Tsai , Sheng-Wei Yang
发明人： Sanjeev Sapra , Cheng-Shun Chen , Hung-Ming Tsai , Sheng-Wei Yang
IPC分类号： H01L21/306 , H01L29/06 , B82Y40/00 , B82Y99/00
CPC分类号： H01L23/5283 , B82Y30/00 , H01L21/02238 , H01L21/30604 , H01L21/3083 , H01L21/31111 , H01L29/04 , H01L29/16 , H01L2924/0002 , H01L2924/00
摘要： A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one trench to expose the underlying silicon. A portion of the underlying exposed silicon is removed to form a cavity in the silicon. At least one removal cycle is conducted to remove exposed silicon in the cavity to form a bulb-shaped cross-sectional profile, with each removal cycle comprising subjecting the silicon in the cavity to ozonated water to oxidize the silicon and subjecting the oxidized silicon to a hydrogen fluoride solution to remove the oxidized silicon. A semiconductor device structure comprising the at least one trench comprising a cavity with a bulb-shaped cross-sectional profile is also disclosed.
摘要翻译： 公开了一种在硅中产生一个具有一个灯泡形横截面的沟槽的方法。 该方法包括在硅中形成至少一个沟槽并在至少一个沟槽中形成衬垫。 将衬垫从至少一个沟槽的底表面移除以暴露下面的硅。 去除底层暴露的硅的一部分以在硅中形成空腔。 进行至少一个去除周期以去除空腔中的暴露的硅以形成球形横截面轮廓，每个去除周期包括使空腔中的硅经受臭氧化水以氧化硅并将氧化的硅经受 氟化氢溶液去除氧化硅。 还公开了一种半导体器件结构，其包括包括具有灯泡形横截面轮廓的空腔的至少一个沟槽。
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公开(公告)号：US08283259B2
公开(公告)日：2012-10-09
申请号：US12872564
申请日：2010-08-31
申请人： Sanjeev Sapra , Janos Fucsko
发明人： Sanjeev Sapra , Janos Fucsko
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76883 , H01L21/32115 , H01L21/32134
摘要： A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material and an exposed metal nitride material. The semiconductor device structure is subjected to a solution comprising water, ozone, and at least one additive to remove the exposed metal nitride material at a substantially greater rate than the exposed metal material.
摘要翻译： 公开了去除金属氮化物材料的方法。 该方法包括形成包括暴露的金属材料和暴露的金属氮化物材料的半导体器件结构。 对半导体器件结构进行包含水，臭氧和至少一种添加剂的溶液，以比暴露的金属材料大得多的速率去除暴露的金属氮化物材料。
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公开(公告)号：US08283236B2
公开(公告)日：2012-10-09
申请号：US13010156
申请日：2011-01-20
IPC分类号： H01L21/20
CPC分类号： H01L28/90
摘要： Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.
摘要翻译： 一些实施例包括电容器。 电容器可以包括沿横截面具有一对向上延伸的侧壁的容器形存储节点结构。 单个侧壁可以在更宽的部分上具有较窄的部分。 电容介电材料和电容器电极材料可以沿着侧壁的较窄和较宽的部分。 一些实施例包括形成电容器的方法，其中初始容器形存储节点结构形成为沿着横截面具有一对向上延伸的侧壁，其侧壁的厚度基本上恒定或从基底到 初始结构的顶部。 然后通过减小侧壁的上段的厚度，同时使侧壁的下段的厚度基本上保持不变，将初始结构转换成修改的存储节点结构。 电容器电介质材料和电容器电极材料沿修改的存储节点结构形成。
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公开(公告)号：US20120178257A1
公开(公告)日：2012-07-12
申请号：US12986770
申请日：2011-01-07
申请人： Sanjeev Sapra , Niraj Rana
发明人： Sanjeev Sapra , Niraj Rana
IPC分类号： H01L21/768 , C11D7/60 , B08B3/00
CPC分类号： C11D7/08 , C11D11/0047 , H01L21/02063
摘要： A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.
摘要翻译： 一种清洗半导体结构的方法，包括使半导体结构体至少含有一种氟化合物的水溶液和至少一种强酸，所述水溶液的pH值小于1.在一个实施方案中，水溶液包括水 ，盐酸和氢氟酸，水与盐酸的体积比与氢氟酸的比例为1000：32.5：1。 该水溶液可用于形成具有比常规清洁溶液更好的接触电阻和改进的临界尺寸偏差的接触塞。
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