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    Integrated power and data insulated electrical cable having a metallic outer jacket
    2.
    发明授权
    Integrated power and data insulated electrical cable having a metallic outer jacket 有权
    具有金属外护套的集成电源和数据绝缘电缆

    公开(公告)号：US07205480B2

    公开(公告)日：2007-04-17

    申请号：US11301979

    申请日：2005-12-13

    申请人： James R. Fetterolf, Sr. ,  Charles S. Blichasz ,  William L. Donmoyer ,  Arthur H. Heuer ,  Alberto E. Planas, Sr. ,  Alberto E. Planas, Jr.

    发明人： James R. Fetterolf, Sr. ,  Charles S. Blichasz ,  William L. Donmoyer ,  Arthur H. Heuer ,  Alberto E. Planas, Sr. ,  Alberto E. Planas, Jr.

    IPC分类号： H01B11/02

    CPC分类号： H01B9/02 ,  H01B9/003

    摘要： The present invention is directed to a hybrid electrical cable providing for power transmission or distribution and data and/or voice signal communications. In one preferred embodiment, the hybrid electrical cable includes a power cable having a group of one or more high voltage power conductors for conducting power and one or more groups of low power signal conductors for transmitting voice and/or data and/or control signals. The cable further includes a power cable insulation jacket overlying the group of one or more power conductors. The power cable insulation jacket includes a soft magnetic material, preferably a soft ferrite magnetic material, for RF absorption. The cable additionally includes an outer grounded metallic jacket or sheath overlying the power cable, the power cable insulation jacket and the one or more groups of low power conductors.

    摘要翻译： 本发明涉及提供功率传输或分配以及数据和/或语音信号通信的混合电缆。 在一个优选实施例中，混合电缆包括具有一组用于传导电力的一个或多个高压电力导体的电力电缆和用于传输语音和/或数据和/或控制信号的一组或多组低功率信号导体。 电缆还包括覆盖一组或多个电力导体的电力电缆绝缘护套。 电力电缆绝缘套管包括用于RF吸收的软磁性材料，优选软铁氧体磁性材料。 电缆还包括覆盖电力电缆的外部接地金属护套或护套，电力电缆绝缘护套和一组或多组低功率导体。

    Integrated power and data insulated electrical cable having a metallic outer jacket
    3.
    发明授权
    Integrated power and data insulated electrical cable having a metallic outer jacket 有权
    具有金属外护套的集成电源和数据绝缘电缆

    公开(公告)号：US06998538B1

    公开(公告)日：2006-02-14

    申请号：US10903756

    申请日：2004-07-30

    申请人： James R. Fetterolf, Sr. ,  Charles S. Blichasz ,  William L. Donmoyer ,  Arthur H. Heuer ,  Alberto E. Planas, Sr. ,  Alberto E. Planas, Jr.

    发明人： James R. Fetterolf, Sr. ,  Charles S. Blichasz ,  William L. Donmoyer ,  Arthur H. Heuer ,  Alberto E. Planas, Sr. ,  Alberto E. Planas, Jr.

    IPC分类号： H01B11/02

    CPC分类号： H01B9/02 ,  H01B9/003

    摘要： The present invention is directed to a hybrid electrical cable providing for power transmission or distribution and data and/or voice signal communications. In one preferred embodiment, the hybrid electrical cable includes a power cable having a group of one or more high voltage power conductors for conducting power and one or more groups of low power signal conductors for transmitting voice and/or data and/or control signals. The cable further includes a power cable insulation jacket overlying the group of one or more power conductors. The power cable insulation jacket includes a soft magnetic material, preferably a soft ferrite magnetic material, for RF absorption. The cable additionally includes an outer grounded metallic jacket or sheath overlying the power cable, the power cable insulation jacket and the one or more groups of low power conductors.

    摘要翻译： 本发明涉及提供功率传输或分配以及数据和/或语音信号通信的混合电缆。 在一个优选实施例中，混合电缆包括具有一组用于传导电力的一个或多个高压电力导体的电力电缆和用于传输语音和/或数据和/或控制信号的一组或多组低功率信号导体。 电缆还包括覆盖一组或多个电力导体的电力电缆绝缘护套。 电力电缆绝缘套管包括用于RF吸收的软磁性材料，优选软铁氧体磁性材料。 电缆还包括覆盖电力电缆的外部接地金属护套或护套，电力电缆绝缘护套和一组或多组低功率导体。

    Selective vacuum gripper
    4.
    发明授权
    Selective vacuum gripper 失效

    公开(公告)号：US5883357A

    公开(公告)日：1999-03-16

    申请号：US622551

    申请日：1996-03-25

    申请人： Wyatt S. Newman ,  James D. Cawley ,  Arthur H. Heuer

    发明人： Wyatt S. Newman ,  James D. Cawley ,  Arthur H. Heuer

    IPC分类号： B23K26/08 ,  B26D7/18 ,  B26F1/38 ,  B29C67/00 ,  B23K26/00

    CPC分类号： B23K26/0853 ,  B23K26/0876 ,  B26D7/1863 ,  B26F1/3813 ,  B29C67/0074 ,  B32B38/18 ,  B26F2210/08 ,  B32B2038/1891 ,  Y10T83/0453 ,  Y10T83/207 ,  Y10T83/2185

    摘要： An apparatus for forming an integral three-dimensional object from a plurality of individual laminations includes a cutting surface on which each of the laminations is individually deposited. A concentrated energy source cuts each of the plurality of laminations into a shape required for assembly of the laminations into the integral three-dimensional object. A transfer mechanism removes each of the cut laminations from the cutting surface and stacks each of the cut laminations on an assembly surface. The transfer mechanism includes a gripper face having a peripheral portion and a central portion. A mask is positioned on the gripper face. The mask has an apertured central portion corresponding to the cut lamination. A source of suction communicates with the gripper face and a valve mechanism selectively draws a suction on the gripper face peripheral portion, the gripper face central portion, both or neither. An electronic control device is provided for controlling the operation of the cutting surface, the concentrated energy cutter and the transfer mechanism.

    Low stress polysilicon film and method for producing same
    5.
    发明授权
    Low stress polysilicon film and method for producing same 失效
    低应力多晶硅膜及其制造方法

    公开(公告)号：US06465045B1

    公开(公告)日：2002-10-15

    申请号：US09691706

    申请日：2000-10-18

    申请人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang

    发明人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang

    IPC分类号： C23C1608

    CPC分类号： H01L21/28525 ,  C23C16/24 ,  C23C16/44 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/12528 ,  Y10T428/12639 ,  Y10T428/12674

    摘要： Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

    摘要翻译： 公开了具有预定应力特性的多晶硅薄膜的多层组件和用于形成这种组件的技术。 特别地，可以产生多晶硅薄膜的多层组件，其具有零的应力水平，或者基本如此。 多层组件包括具有拉伸应力的至少一种构成薄膜和至少一种具有压应力的构成薄膜。 形成多层组件的薄膜可以彼此紧邻地设置，而不需要在薄膜之间使用中间层。

    Low stress polysilicon film and method for producing same
    6.
    发明授权
    Low stress polysilicon film and method for producing same 失效
    低应力多晶硅膜及其制造方法

    公开(公告)号：US06268068B1

    公开(公告)日：2001-07-31

    申请号：US09260168

    申请日：1999-03-01

    申请人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang

    发明人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang

    IPC分类号： B32B1501

    CPC分类号： H01L21/28525 ,  C23C16/24 ,  C23C16/44 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/12528 ,  Y10T428/12639 ,  Y10T428/12674

    摘要： Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

    摘要翻译： 公开了具有预定应力特性的多晶硅薄膜的多层组件和用于形成这种组件的技术。 特别地，可以产生多晶硅薄膜的多层组件，其具有零的应力水平，或者基本如此。 多层组件包括具有拉伸应力的至少一种构成薄膜和至少一种具有压应力的构成薄膜。 形成多层组件的薄膜可以彼此紧邻地设置，而不需要在薄膜之间使用中间层。

    Multi-layer assemblies with predetermined stress profile and method for producing same
    9.
    发明授权
    Multi-layer assemblies with predetermined stress profile and method for producing same 有权
    具有预定应力分布的多层组件及其制造方法

    公开(公告)号：US06610361B1

    公开(公告)日：2003-08-26

    申请号：US09449790

    申请日：1999-11-26

    申请人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang ,  Stephen M. Phillips

    发明人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang ,  Stephen M. Phillips

    IPC分类号： C23C1624

    CPC分类号： H01L21/28525 ,  C23C16/24 ,  C23C16/44 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/12528 ,  Y10T428/12639 ,  Y10T428/12674

    摘要： Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

    摘要翻译： 公开了具有预定应力特性的多晶硅薄膜的多层组件和用于形成这种组件的技术。 特别地，可以产生多层薄膜的多层组件，其具有零的应力水平，或者基本如此。 多层组件包括具有拉伸应力的至少一种构成薄膜和至少一种具有压应力的构成薄膜。 形成多层组件的薄膜可以彼此紧邻地设置，而不需要在薄膜之间使用中间层。 还公开了表现出可选择性确定的总弯矩的多层组件。 选择性地生产微结构中的整体弯矩使得能够以广泛的几何构型阵列制造这种结构。

    Large area polysilicon films with predetermined stress characteristics and method for producing same
    10.
    发明授权
    Large area polysilicon films with predetermined stress characteristics and method for producing same 失效
    具有预定应力特性的大面积多晶硅膜及其制造方法

    公开(公告)号：US06479166B1

    公开(公告)日：2002-11-12

    申请号：US09561675

    申请日：2000-05-01

    申请人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang ,  Stephen M. Phillips

    发明人： Arthur H. Heuer ,  Harold Kahn ,  Jie Yang ,  Stephen M. Phillips

    IPC分类号： H01L2912

    CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/44 ,  C23C28/02 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  Y10T428/12528 ,  Y10T428/12639

    摘要： Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

    摘要翻译： 公开了具有预定应力特性的多晶硅薄膜的多层组件和用于形成这种组件的技术。 特别地，可以产生多层薄膜的多层组件，其具有零的应力水平，或者基本如此。 多层组件包括具有拉伸应力的至少一种构成薄膜和至少一种具有压应力的构成薄膜。 形成多层组件的薄膜可以彼此紧邻地设置，而不需要在薄膜之间使用中间层。 还公开了表现出可选择性确定的总弯矩的多层组件。 选择性地生产微结构中的整体弯矩使得能够以广泛的几何构型阵列制造这种结构。