公开(公告)号：US06341697B1

公开(公告)日：2002-01-29

申请号：US09699967

申请日：2000-10-30

申请人： Jan D. Miller ,  Xuming Wang ,  Minhua Li

发明人： Jan D. Miller ,  Xuming Wang ,  Minhua Li

IPC分类号： B03D101

CPC分类号： B03D1/021 ,  B03D1/008 ,  B03D1/01 ,  B03D2201/02 ,  B03D2203/06

摘要： A method is disclosed for separating phosphate minerals from a mineral mixture, particularly from high-dolomite containing phosphate ores. The method involves conditioning the mineral mixture by contacting in an aqueous in environment with a collector in an amount sufficient for promoting flotation of phosphate minerals. The collector is a hydroxamate compound of the formula; wherein R is generally hydrophobic and chosen such that the collector has solubility or dispersion properties it can be distributed in the mineral mixture, typically an alkyl, aryl, or alkylaryl group having 6 to 18 carbon atoms. M is a cation, typically hydrogen, an alkali metal or an alkaline earth metal. Preferably, the collector also comprises an alcohol of the formula, R′—OH wherein R′ is generally hydrophobic and chosen such that the collector has solubility or dispersion properties so that it can be distributed in the mineral mixture, typically an alkyl, aryl, or alkylaryl group having 6 to 18 carbon atoms.

摘要翻译： 公开了一种从矿物混合物中分离磷酸盐矿物的方法，特别是来自含高白云石的磷酸盐矿石。 该方法包括通过使环境中的水溶液与足以促进磷酸盐矿物浮选的量的收集器接触来调节矿物混合物。 收集器是下式的异肟酸酯化合物：其中R通常是疏水性的并且选择为使得收集器具有溶解度或分散性，其可以分布在矿物混合物中，通常为具有6至18个碳原子的烷基，芳基或烷基芳基 。 M是阳离子，通常为氢，碱金属或碱土金属。 优选地，收集器还包含下式的醇，其中R'通常是疏水性的并且选择为使得收集器具有溶解度或分散性质，使得其可以分布在矿物混合物中，通常为分布在烷基，芳基或烷芳基中， 6至18个碳原子。

公开(公告)号：US20050220687A1

公开(公告)日：2005-10-06

申请号：US11094326

申请日：2005-03-30

申请人： J. Miller ,  Xuming Wang ,  Minhua Li

发明人： J. Miller ,  Xuming Wang ,  Minhua Li

IPC分类号： C01D7/00 ,  C22B1/00 ,  C22B26/10

CPC分类号： C01D7/00 ,  C22B1/00 ,  C22B26/10

摘要： The present invention is a trona concentrate and a process for floating gangue material from trona ore that comprises forming an emulsion, conditioning the trona ore at a high solids content in a saturated trona suspension, and then floating and removing the gangue material. The process for separating trona from gangue materials in trona ore can include emulsifying an oil in an aqueous solution to form an oil-in-water emulsion. A saturated trona suspension having a high solids content can also be formed having trona of a desired particle size. The undissolved trona in the saturated suspension can be conditioned by mixing the saturated suspension and the oil-in-water emulsion to form a conditioning solid suspension of trona and gangue material. A gas can be injected through the conditioning solid suspension to float the gangue material. Thus, the floated gangue material can be readily separated from the trona to form a purified trona concentrate without requirements of additional heat or other expensive processing steps.

摘要翻译： 本发明是天然精浓缩物和用于从天然碱矿石中漂浮的ang石材料的方法，其包括形成乳液，以饱和的天然碱悬浮液中的高固体含量调节天然碱矿石，然后漂浮并除去脉石材料。 将天然碱与天然碱矿石中的脉石材料分离的方法可以包括在水溶液中乳化油以形成水包油乳液。 也可以形成具有高固体含量的饱和天然碱悬浮液，其具有所需粒径的天然碱。 可以通过混合饱和悬浮液和水包油乳液来调节饱和悬浮液中未溶解的天然碱，以形成天然碱和脉石材料的调理固体悬浮液。 可以通过调理固体悬浮液注入气体以漂浮ang石材料。 因此，漂浮的脉石材料可以容易地从天然碱分离以形成纯化的天然碱浓缩物，而不需要额外的热量或其它昂贵的加工步骤。

公开(公告)号：US07517509B2

公开(公告)日：2009-04-14

申请号：US11094326

申请日：2005-03-30

申请人： J. D. Miller ,  Xuming Wang ,  Minhua Li

发明人： J. D. Miller ,  Xuming Wang ,  Minhua Li

IPC分类号： C01D11/00

CPC分类号： C01D7/00 ,  C22B1/00 ,  C22B26/10

摘要： The present invention is a trona concentrate and a process for floating gangue material from trona ore that comprises forming an emulsion, conditioning the trona ore at a high solids content in a saturated trona suspension, and then floating and removing the gangue material. The process for separating trona from gangue materials in trona ore can include emulsifying an oil in an aqueous solution to form an oil-in-water emulsion. A saturated trona suspension having a high solids content can also be formed having trona of a desired particle size. The undissolved trona in the saturated suspension can be conditioned by mixing the saturated suspension and the oil-in-water emulsion to form a conditioning solid suspension of trona and gangue material. A gas can be injected through the conditioning solid suspension to float the gangue material. Thus, the floated gangue material can be readily separated from the trona to form a purified trona concentrate without requirements of additional heat or other expensive processing steps.

摘要翻译： 本发明是天然精浓缩物和用于从天然碱矿石中漂浮的ang石材料的方法，其包括形成乳液，以饱和的天然碱悬浮液中的高固体含量调节天然碱矿石，然后漂浮并除去脉石材料。 将天然碱与天然碱矿石中的脉石材料分离的方法可以包括在水溶液中乳化油以形成水包油乳液。 也可以形成具有高固体含量的饱和天然碱悬浮液，其具有所需粒径的天然碱。 可以通过混合饱和悬浮液和水包油乳液来调节饱和悬浮液中未溶解的天然碱，以形成天然碱和脉石材料的调理固体悬浮液。 可以通过调理固体悬浮液注入气体以漂浮ang石材料。 因此，漂浮的脉石材料可以容易地从天然碱分离以形成纯化的天然碱浓缩物，而不需要额外的热量或其它昂贵的加工步骤。

公开(公告)号：US08338886B2

公开(公告)日：2012-12-25

申请号：US13328179

申请日：2011-12-16

申请人： Qi Wang ,  Minhua Li ,  Yuri Sokolov

发明人： Qi Wang ,  Minhua Li ,  Yuri Sokolov

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L21/30608 ,  H01L21/76254 ,  H01L29/045 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/66348 ,  H01L29/66363 ,  H01L29/66734

摘要： A vertical semiconductor device includes a bottom metal layer and a first P-type semiconductor layer overlying the bottom metal layer. The first P-type semiconductor layer is characterized by a surface crystal orientation of (110) and a first conductivity. The first P-type semiconductor layer is heavily doped. The vertical semiconductor device also includes a second P-type semiconductor layer overlying the first P-type semiconductor layer. The second semiconductor layer has a surface crystal orientation of (110) and is characterized by a lower conductivity than the first conductivity. The vertical semiconductor device also has a top metal layer overlying the second P-type semiconductor layer. A current conduction from the top metal layer to the bottom metal layer and through the second p-type semiconductor layer is characterized by a hole mobility along a crystalline orientation and on (110) crystalline plane.

摘要翻译： 垂直半导体器件包括底金属层和覆盖底部金属层的第一P型半导体层。 第一P型半导体层的特征在于（110）的表面晶体取向和第一导电性。 第一P型半导体层是重掺杂的。 垂直半导体器件还包括覆盖第一P型半导体层的第二P型半导体层。 第二半导体层具有（110）的表面晶体取向，其特征在于比第一导电性低的导电性。 垂直半导体器件还具有覆盖第二P型半导体层的顶部金属层。 从顶部金属层到底部金属层和通过第二p型半导体层的电流传导的特征在于沿着<110>晶体取向和在（110）晶面上的空穴迁移率。

公开(公告)号：US07635637B2

公开(公告)日：2009-12-22

申请号：US11189163

申请日：2005-07-25

申请人： Qi Wang ,  Minhua Li ,  Jeffrey H. Rice

发明人： Qi Wang ,  Minhua Li ,  Jeffrey H. Rice

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/6835 ,  H01L2221/68368

摘要： Processes used to transfer semiconductor structures from an initial substrate to a base substrate include bonding the initial substrate with a silicon dioxide layer to a doped silicon structure weakened sufficiently by hydrogen implantation for cleaving. After cleaving, a doped silicon layer remains, burying the silicon dioxide layer between the doped silicon layer and the initial substrate. Semiconductor structures are formed within/on an epitaxial layer disposed on the doped silicon layer forming an intermediate semiconductor structure. A process handle is temporarily bonded to the semiconductor structures for support. The initial substrate is thinned and removed by a mechanical thinning process followed by chemical etching using the buried silicon dioxide layer as an etch stop. The silicon dioxide layer is chemically removed from the doped silicon layer. A base substrate is formed on the doped silicon layer. The process handle is removed leaving the semiconductor structures disposed on the base substrate.

摘要翻译： 用于将半导体结构从初始衬底转移到基底衬底的工艺包括将初始衬底与二氧化硅层结合到通过氢注入充分削弱的用于裂解的掺杂硅结构。 在分裂之后，保留掺杂的硅层，将二氧化硅层埋在掺杂硅层和初始衬底之间。 半导体结构形成在设置在掺杂硅层上的外延层内/之上，形成中间半导体结构。 工艺手柄临时粘合到用于支撑的半导体结构。 通过机械稀化处理使初始底物变薄并除去，然后使用掩埋二氧化硅层作为蚀刻停止层进行化学蚀刻。 从掺杂硅层化学去除二氧化硅层。 基底衬底形成在掺杂硅层上。 去除处理手柄，留下设置在基底基板上的半导体结构。

公开(公告)号：US07635635B2

公开(公告)日：2009-12-22

申请号：US11400731

申请日：2006-04-06

申请人： Hamza Yilmaz ,  Qi Wang ,  Minhua Li ,  Chung-Lin Wu

发明人： Hamza Yilmaz ,  Qi Wang ,  Minhua Li ,  Chung-Lin Wu

IPC分类号： H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/6835 ,  H01L24/28 ,  H01L29/78603 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0665

摘要： A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.

摘要翻译： 公开了将半导体衬底接合到金属衬底的方法。 在一些实施例中，该方法包括在半导体衬底中形成半导体器件，该半导体器件包括第一表面。 该方法还包括获得金属基底。 金属基板结合到半导体器件的第一表面，其中金属基板的至少一部分形成用于半导体器件的电端子。

公开(公告)号：USD965462S1

公开(公告)日：2022-10-04

申请号：US29783263

申请日：2021-05-12

申请人： Minhua Li

设计人： Minhua Li

公开(公告)号：US08329508B2

公开(公告)日：2012-12-11

申请号：US12823805

申请日：2010-06-25

申请人： Hamza Yilmaz ,  Steven Sapp ,  Qi Wang ,  Minhua Li ,  James J. Murphy ,  John Robert Diroll

发明人： Hamza Yilmaz ,  Steven Sapp ,  Qi Wang ,  Minhua Li ,  James J. Murphy ,  John Robert Diroll

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/3114 ,  H01L23/481 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L25/072 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06102 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/1411 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor die package is disclosed. The semiconductor die package comprises a metal substrate, and a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture. The metal substrate is attached to the second surface. A plurality of conductive structures is on the semiconductor die, and includes at least one conductive structure disposed in the at least one aperture. Other conductive structures may be disposed on the first surface of the semiconductor die.

摘要翻译： 公开了一种半导体管芯封装。 半导体管芯封装包括金属基板和半导体管芯，其包括第一表面，第一表面包括第一电端子，第二表面，包括第二电端子和至少一个孔。 金属基板附接到第二表面。 多个导电结构在半导体管芯上，并且包括设置在该至少一个孔中的至少一个导电结构。 其他导电结构可以设置在半导体管芯的第一表面上。

公开(公告)号：US08101500B2

公开(公告)日：2012-01-24

申请号：US12174030

申请日：2008-07-16

申请人： Qi Wang ,  Minhua Li ,  Yuri Sokolov

发明人： Qi Wang ,  Minhua Li ,  Yuri Sokolov

IPC分类号： H01L21/30

CPC分类号： H01L29/7813 ,  H01L21/30608 ,  H01L21/76254 ,  H01L29/045 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/66348 ,  H01L29/66363 ,  H01L29/66734

摘要： A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface.

摘要翻译： 在金属衬底上的重掺杂P型（110）半导体层上形成半导体器件的方法包括提供第一支撑衬底并形成覆盖在第一支撑衬底上的P型重掺杂（110）硅层。 至少第一支撑衬底的顶层可通过相对于P型重掺杂（110）硅层的选择性蚀刻工艺而移除。 在（110）硅层中和上方形成垂直半导体器件结构。 垂直装置结构包括顶部金属层，其特征在于沿<110>方向的电流传导。 该方法包括使用机械研磨和选择性蚀刻工艺将第二支撑衬底接合到顶部金属层并去除第一支撑衬底，以暴露P型重掺杂（110）硅层的表面并允许金属层 在表面上形成。

公开(公告)号：US20090181520A1

公开(公告)日：2009-07-16

申请号：US12174863

申请日：2008-07-17

申请人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

发明人： Minhua Li ,  Qi Wang ,  Gordon Sim ,  Matthew Reynolds ,  Suku Kim ,  James J. Murphy ,  Hamza Yilmaz

IPC分类号： H01L21/78

CPC分类号： H01L21/78

摘要： A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.

摘要翻译： 公开了一种从半导体结构获得单个管芯的方法。 半导体结构包括器件层，器件层又包括由预定间隔隔开的有源区。 在器件层的背侧选择性地形成厚金属，使得在有源区的背面形成厚金属，而不在预定间隔的背面形成厚金属。 然后沿着预定的间隔切割半导体结构，以将其背面的厚金属的活性区域分离成单独的管芯。