TRIODE-TYPE FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    TRIODE-TYPE FIELD EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    三角型场发射装置及其制造方法

    公开(公告)号:US20130015778A1

    公开(公告)日:2013-01-17

    申请号:US13419821

    申请日:2012-03-14

    CPC分类号: H01J9/18 B82Y10/00 H01J63/04

    摘要: A triode-type field emission device and method of manufacturing the same, suitable for use in screen print process of curved or planar substrate, comprising the following steps: firstly, form a cathode and a gate on a cathode substrate at the same time by means of screen printing, and a gap is located between gate and cathode, to avoid short circuit or interference; next, form a hedgehog-shape field emission layer on at least said cathode; then, form a transparent conductive layer and a light emitting layer sequentially on an anode substrate; and finally, dispose cathode substrate and anode substrate in parallel and spaced apart, and package them into a triode-type field emission device. Bias of cathode and gate can be controlled to achieve local adjustment of light. Also, gate may serve as an emitter, to increase field emission efficiency and its service life.

    摘要翻译: 一种适用于弯曲或平面基板的丝网印刷工艺的三极管型场发射器件及其制造方法,包括以下步骤:首先,通过装置同时在阴极基板上形成阴极和栅极 的丝网印刷,并且在栅极和阴极之间存在间隙,以避免短路或干扰; 接下来,在至少所述阴极上形成刺猬形场发射层; 然后依次在阳极基板上形成透明导电层和发光层; 最后,将阴极基板和阳极基板平行布置并间隔开,并将其封装成三极管型场致发射器件。 可以控制阴极和栅极的偏置,以实现局部光调节。 此外,门可以作为发射器,以增加场发射效率及其使用寿命。

    METHOD OF MANUFACTURING CARBON NANOTUBE (CNT) FIELD EMISSION SOURCE
    3.
    发明申请
    METHOD OF MANUFACTURING CARBON NANOTUBE (CNT) FIELD EMISSION SOURCE 审中-公开
    制备碳纳米管(CNT)场发射源的方法

    公开(公告)号:US20100285715A1

    公开(公告)日:2010-11-11

    申请号:US12607706

    申请日:2009-10-28

    IPC分类号: H01J9/12

    CPC分类号: H01J9/025 H01J2329/0455

    摘要: A method of manufacturing carbon nanotube (CNT) field emission source, comprising the following steps of: providing a substrate; disposing an electrode layer on substrate; applying a mixture on electrode layer by means of screen printing, and mixture is a mixture of CNT paste and carbon powder; performing sinter in proceeding with a heat cracking reaction, and the carbon cracked and obtained in a heat cracking reaction of carbon powder and polymer in CNT paste is used as a carbon source, and that is used to grow a CNT emission layer of a hedgehog-shaped CNT cluster structure, thus obtaining a cathode plate after completion of sinter process. The hedgehog-shaped CNT cluster structure is a carbon nanotube (CNT) emission layer capable of having multi-direction electron emission routes. As such, it can realize the characteristics of high current density, and low turn-on voltage, while raising the stability of electron field emission.

    摘要翻译: 一种制造碳纳米管(CNT)场发射源的方法,包括以下步骤:提供衬底; 在基板上设置电极层; 通过丝网印刷在电极层上施加混合物,混合物是CNT浆料和碳粉末的混合物; 在进行热裂解反应时进行烧结,将碳粉和聚合物在CNT浆料中的热裂解反应中得到的碳作为碳源,用于生长刺猬蛋白的CNT发射层, 形成CNT簇结构,从而在烧结过程完成后获得阴极板。 刺猬状CNT簇结构是能够具有多向电子发射路线的碳纳米管(CNT)发射层。 因此,可以实现高电流密度,低导通电压的特性,同时提高电子场发射的稳定性。

    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20110272727A1

    公开(公告)日:2011-11-10

    申请号:US13186225

    申请日:2011-07-19

    IPC分类号: H01L33/60

    摘要: A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate.

    摘要翻译: 描述了一种发光二极管及其制造方法。 发光二极管包括:导电基板,包括第一表面和与第一表面相对的第二表面; 反射器结构,其包括结合到所述导电基板的所述第一表面的导电反射器层和层叠在所述导电反射器层上的导电分布布拉格反射器(DBR)结构; 设置在反射器结构上的光源外延结构; 设置在所述发光体外延结构的一部分上的第一电极; 以及结合到导电基板的第二表面的第二电极。

    Triode-type field emission device and method of manufacturing the same
    7.
    发明授权
    Triode-type field emission device and method of manufacturing the same 有权
    三极型场致发射器件及其制造方法

    公开(公告)号:US09018831B2

    公开(公告)日:2015-04-28

    申请号:US13419821

    申请日:2012-03-14

    CPC分类号: H01J9/18 B82Y10/00 H01J63/04

    摘要: A triode-type field emission device and method of manufacturing the same, suitable for use in screen print process of curved or planar substrate, comprising the following steps: firstly, form a cathode and a gate on a cathode substrate at the same time by means of screen printing, and a gap is located between gate and cathode, to avoid short circuit or interference; next, form a hedgehog-shape field emission layer on at least said cathode; then, form a transparent conductive layer and a light emitting layer sequentially on an anode substrate; and finally, dispose cathode substrate and anode substrate in parallel and spaced apart, and package them into a triode-type field emission device. Bias of cathode and gate can be controlled to achieve local adjustment of light. Also, gate may serve as an emitter, to increase field emission efficiency and its service life.

    摘要翻译: 一种适用于弯曲或平面基板的丝网印刷工艺的三极管型场发射器件及其制造方法,包括以下步骤:首先,通过装置同时在阴极基板上形成阴极和栅极 的丝网印刷,并且在栅极和阴极之间存在间隙,以避免短路或干扰; 接下来,在至少所述阴极上形成刺猬形场发射层; 然后依次在阳极基板上形成透明导电层和发光层; 最后,将阴极基板和阳极基板平行布置并间隔开,并将其封装成三极管型场致发射器件。 可以控制阴极和栅极的偏置,以实现局部光调节。 此外,门可以作为发射器,以增加场发射效率及其使用寿命。