Method and apparatus for controlling gas flow to a processing chamber
    3.
    发明授权
    Method and apparatus for controlling gas flow to a processing chamber 失效
    用于控制到处理室的气流的方法和装置

    公开(公告)号:US08074677B2

    公开(公告)日:2011-12-13

    申请号:US11678621

    申请日:2007-02-26

    IPC分类号: F16K11/24 G01F1/00

    摘要: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译: 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中,用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中,一种方法包括提供具有至少多个入口的歧管,歧管可以选择性地联接到多个出口中的至少一个,将一个或多个气体通过歧管流动到真空环境,旁路处理室 在处理之前或校准电路,并且在衬底处理期间使一种或多种气体流入处理室。

    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER
    6.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER 有权
    用于控制气体流向加工室的方法和装置

    公开(公告)号:US20080202588A1

    公开(公告)日:2008-08-28

    申请号:US11678623

    申请日:2007-02-26

    IPC分类号: F17D3/00

    摘要: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译: 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中,用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出管线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中,一种方法包括提供具有至少多个入口的歧管,歧管可以选择性地联接到多个出口中的至少一个出口,使一个或多个气体通过歧管流过真空环境,旁通处理室 在处理之前或校准电路,并且在衬底处理期间使一种或多种气体流入处理室。

    Method and apparatus for controlling gas flow to a processing chamber
    7.
    发明授权
    Method and apparatus for controlling gas flow to a processing chamber 有权
    用于控制到处理室的气流的方法和装置

    公开(公告)号:US07775236B2

    公开(公告)日:2010-08-17

    申请号:US11678622

    申请日:2007-02-26

    IPC分类号: F16K11/24

    摘要: A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译: 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中,用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中,一种方法包括提供具有至少多个入口的歧管,歧管可以选择性地联接到多个出口中的至少一个,将一个或多个气体通过歧管流动到真空环境,旁路处理室 在处理之前或校准电路,并且在衬底处理期间使一种或多种气体流入处理室。

    Methods and apparatus for providing a gas mixture to a pair of process chambers
    10.
    发明授权
    Methods and apparatus for providing a gas mixture to a pair of process chambers 失效
    将气体混合物提供给一对处理室的方法和装置

    公开(公告)号:US08616224B2

    公开(公告)日:2013-12-31

    申请号:US12907944

    申请日:2010-10-19

    IPC分类号: B08B3/00

    摘要: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

    摘要翻译: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中,该装置将气体混合物提供给一对处理室,包括第一臭氧发生器以向第一处理室提供第一气体混合物,第二臭氧发生器将第二气体混合物提供给第二处理室, 第一气体源,经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器,并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器,以及耦合到第一气体源的第一气体源 臭氧发生器,经由第三质量流量控制器和第三气体管线,并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。