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    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER
    5.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER 有权
    用于控制气体流向加工室的方法和装置

    公开(公告)号：US20080202588A1

    公开(公告)日：2008-08-28

    申请号：US11678623

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F17D3/00

    CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/0318 ,  Y10T137/0324 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出管线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个出口，使一个或多个气体通过歧管流过真空环境，旁通处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

    Method and apparatus for controlling gas flow to a processing chamber
    6.
    发明授权
    Method and apparatus for controlling gas flow to a processing chamber 失效
    用于控制到处理室的气流的方法和装置

    公开(公告)号：US08074677B2

    公开(公告)日：2011-12-13

    申请号：US11678621

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F16K11/24 ,  G01F1/00

    CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

    Method and apparatus for controlling gas flow to a processing chamber
    7.
    发明授权
    Method and apparatus for controlling gas flow to a processing chamber 有权
    用于控制到处理室的气流的方法和装置

    公开(公告)号：US07775236B2

    公开(公告)日：2010-08-17

    申请号：US11678622

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F16K11/24

    CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

    METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE
    10.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE 审中-公开
    控制基板温度的方法和装置

    公开(公告)号：US20090159566A1

    公开(公告)日：2009-06-25

    申请号：US12340156

    申请日：2008-12-19

    申请人： Paul L. Brillhart ,  Richard Charles Fovell ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Douglas A. Buchberger, JR. ,  Kallol Bera

    发明人： Paul L. Brillhart ,  Richard Charles Fovell ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Douglas A. Buchberger, JR. ,  Kallol Bera

    IPC分类号： H01L21/306 ,  C23C16/513 ,  C23C14/22 ,  C23C14/34

    CPC分类号： C23C16/4586 ,  C23C14/505

    摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, method for controlling a substrate temperature during processing includes placing a substrate on a substrate pedestal assembly in a vacuum processing chamber, controlling a temperature of the substrate pedestal assembly by flowing a heat transfer fluid through a radial flowpath within the substrate pedestal assembly, the radial flowpath including both radially inward and radially outward portions, and plasma processing the substrate on the temperature controlled substrate pedestal assembly. In another embodiment, plasma processing may be at least one of a plasma treatment, a chemical vapor deposition process, a physical vapor deposition process, an ion implantation process or an etch process, among others.

    摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，用于在处理期间控制衬底温度的方法包括将衬底放置在真空处理室中的衬底基座组件上，通过使传热流体流过衬底基座组件内的径向流动路径来控制衬底基座组件的温度 径向流径包括径向向内和径向向外的部分，以及等离子体处理温度受控的衬底基座组件上的衬底。 在另一个实施例中，等离子体处理可以是等离子体处理，化学气相沉积工艺，物理气相沉积工艺，离子注入工艺或蚀刻工艺等中的至少一个。