公开(公告)号：US07775236B2

公开(公告)日：2010-08-17

申请号：US11678622

申请日：2007-02-26

申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC分类号： F16K11/24

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

公开(公告)号：US06890597B2

公开(公告)日：2005-05-10

申请号：US10435296

申请日：2003-05-09

申请人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

发明人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC分类号： C23C16/45502 ,  C23C16/45591 ,  C23C16/56

摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

摘要翻译： 沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。 通过在衬底上变化的工艺来进行沉积和抛光。 不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。 在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

公开(公告)号：US08231799B2

公开(公告)日：2012-07-31

申请号：US11414026

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

摘要翻译： 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

公开(公告)号：US07846497B2

公开(公告)日：2010-12-07

申请号：US11678623

申请日：2007-02-26

申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC分类号： C23C16/00 ,  F17D1/00 ,  F17D1/02

CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/0318 ,  Y10T137/0324 ,  Y10T137/87249

摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

公开(公告)号：US20080202610A1

公开(公告)日：2008-08-28

申请号：US11678622

申请日：2007-02-26

申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC分类号： F16K21/00

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

公开(公告)号：US20070254486A1

公开(公告)日：2007-11-01

申请号：US11414027

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

IPC分类号： H01L21/461 ,  C03C25/68

CPC分类号： H01L21/76802 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/3347 ,  H01L21/31116

摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体， 第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。

公开(公告)号：US20070251642A1

公开(公告)日：2007-11-01

申请号：US11414026

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

摘要翻译： 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

公开(公告)号：US20060113038A1

公开(公告)日：2006-06-01

申请号：US11123453

申请日：2005-05-04

申请人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

发明人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： C23C16/4558

摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

摘要翻译： 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

公开(公告)号：US09405298B2

公开(公告)日：2016-08-02

申请号：US11561864

申请日：2006-11-20

申请人： Bruno Geoffrion ,  Mark Adam Crocket

发明人： Bruno Geoffrion ,  Mark Adam Crocket

IPC分类号： G05D11/13

CPC分类号： G05D11/132 ,  Y10T137/0363 ,  Y10T137/87249 ,  Y10T137/8729 ,  Y10T137/87298

摘要： A system and method for dividing the flow of one or more process fluids in a predetermined flow ratio is provided herein. In one embodiment, a system for dividing flow of one or more process fluids in a predetermined flow ratio includes a process chamber having a plurality of inlets for delivering one or more process fluids into the process chamber; a plurality of modulating valves coupled to the plurality of inlets, wherein each inlet of the plurality of inlets is coupled to at least one modulating valve; and a controller coupled to the plurality of modulating valves, the controller configured to control the operation of the plurality of modulating valves to divide the flow of one or more process fluids in the predetermined flow ratio.

摘要翻译： 本发明提供一种以预定流量比划分一种或多种工艺流体的流动的系统和方法。 在一个实施例中，用于以预定流量比分配一个或多个过程流体的流动的系统包括具有多个入口的处理室，用于将一个或多个过程流体输送到处理室中; 耦合到所述多个入口的多个调节阀，其中所述多个入口中的每个入口联接到至少一个调节阀; 以及耦合到所述多个调节阀的控制器，所述控制器被配置为控制所述多个调节阀的操作以按预定流量比划分一个或多个过程流体的流动。

公开(公告)号：US08074677B2

公开(公告)日：2011-12-13

申请号：US11678621

申请日：2007-02-26

申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

IPC分类号： F16K11/24 ,  G01F1/00

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。