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    Methods and apparatus for providing a gas mixture to a pair of process chambers
    1.
    发明授权
    Methods and apparatus for providing a gas mixture to a pair of process chambers 失效
    将气体混合物提供给一对处理室的方法和装置

    公开(公告)号：US08616224B2

    公开(公告)日：2013-12-31

    申请号：US12907944

    申请日：2010-10-19

    申请人： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ezra Robert Gold ,  James P. Cruse

    发明人： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ezra Robert Gold ,  James P. Cruse

    IPC分类号： B08B3/00

    CPC分类号： F17D3/03 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02071 ,  H01L21/6719 ,  H01L21/67201 ,  Y10T137/0318 ,  Y10T137/877

    摘要： A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

    摘要翻译： 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室， 第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源 臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

    Apparatus for radial delivery of gas to a chamber and methods of use thereof
    2.
    发明授权
    Apparatus for radial delivery of gas to a chamber and methods of use thereof 失效
    用于将气体径向输送到室的装置及其使用方法

    公开(公告)号：US08562742B2

    公开(公告)日：2013-10-22

    申请号：US12907947

    申请日：2010-10-19

    申请人： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

    发明人： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ankur Agarwal ,  Ezra Robert Gold ,  James P. Cruse ,  Aniruddha Pal ,  Andrew Nguyen

    IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

    CPC分类号： H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68785 ,  Y10T137/6416 ,  Y10T137/8593

    摘要： Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.

    摘要翻译： 本文提供了将气体输送到室的装置及其使用方法。 在一些实施例中，用于处理室的气体分配系统可以包括主体，其具有构造成将主体连接到处理室的内表面的第一表面，主体具有穿过主体设置的开口; 靠近所述开口的与所述主体的第一表面相对的第一端附近的凸缘，所述凸缘向内延伸到所述开口中并且构造成在其上支撑窗户; 以及多个气体分配通道，其设置在所述主体内并且将设置在所述主体内并且围绕所述开口的通道流体连接到设置在所述凸缘中的多个孔，其中所述多个孔围绕所述凸缘径向设置。

    Methods and apparatus for calibrating pressure gauges in a substrate processing system
    4.
    发明授权
    Methods and apparatus for calibrating pressure gauges in a substrate processing system 有权
    在基板处理系统中校准压力表的方法和装置

    公开(公告)号：US08616043B2

    公开(公告)日：2013-12-31

    申请号：US12916450

    申请日：2010-10-29

    申请人： James P. Cruse ,  Ezra Robert Gold ,  Jared Ahmad Lee ,  Ming Xu

    发明人： James P. Cruse ,  Ezra Robert Gold ,  Jared Ahmad Lee ,  Ming Xu

    IPC分类号： G01L27/02

    CPC分类号： G01L27/005 ,  H01L21/67253 ,  Y10T137/86083

    摘要： Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge.

    摘要翻译： 本文公开了用于校准耦合到具有转移体积的转移室的一个或多个处理室中的压力计的系统和方法。 该方法包括在传送体积和连接到传送室的第一处理室的第一内部容积中提供第一压力，其中传送体积和第一内部体积被流体耦合，将校准气体注入到传送体积中 将传送体积和第一内部体积中的压力提高到第二压力，使用耦合到传送室的参考压力表中的每一个测量第二压力，以及耦合到第一处理室的第一压力表，同时传送体积和 第一内部体积流体耦合，并且基于测量的参考压力计和第一压力计之间的第二压力的差异校准第一压力计。

    Method and apparatus for controlling gas flow to a processing chamber
    7.
    发明授权
    Method and apparatus for controlling gas flow to a processing chamber 失效
    用于控制到处理室的气流的方法和装置

    公开(公告)号：US08074677B2

    公开(公告)日：2011-12-13

    申请号：US11678621

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F16K11/24 ,  G01F1/00

    CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER
    9.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER 有权
    用于控制气体流向加工室的方法和装置

    公开(公告)号：US20080202588A1

    公开(公告)日：2008-08-28

    申请号：US11678623

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F17D3/00

    CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/0318 ,  Y10T137/0324 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出管线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个出口，使一个或多个气体通过歧管流过真空环境，旁通处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。