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公开(公告)号：US4879903A
公开(公告)日：1989-11-14
申请号：US241030
申请日：1988-09-02
IPC分类号： G01L9/00
CPC分类号： G01L19/0084 , G01L19/142 , Y10S73/04 , Y10T29/49103
摘要： A pressure measurement apparatus is provided which comprises: a housing formed from a thermoplastic material and defining a chamber, the housing including an upper wall region and a lower wall region and first and second opposed side-wall regions disposed between the upper and lower wall regions, the upper wall region including first and second vent ports formed therein; a semiconductor pressure transducer mounted within the chamber, the pressure transducer including a first surface in communication with the first vent port and including a second surface in communication with the second vent port; at least one first pin terminal extending through the first side-wall region, the at least one first pin terminal including a short segment within the chamber and an elongated segment outside the chamber; and at least one second pin terminal extending through the second side-wall region, the at least one second pin terminal including a short segment within the chamber and an elongated segment outside the chamber.
摘要翻译： 提供了一种压力测量装置，其包括：由热塑性材料形成并限定腔室的壳体，所述壳体包括上壁区域和下壁区域以及设置在上壁区域和下壁区域之间的第一和第二相对侧壁区域 所述上壁区域包括形成在其中的第一和第二排气口; 安装在所述腔室内的半导体压力传感器，所述压力传感器包括与所述第一通气口连通的第一表面，并且包括与所述第二通气口连通的第二表面; 延伸穿过第一侧壁区域的至少一个第一引脚端子，所述至少一个第一引脚端子包括在该腔室内的短段和在腔室外部的细长段; 以及延伸穿过所述第二侧壁区域的至少一个第二销端子，所述至少一个第二销端子包括所述室内的短段和所述室外的细长段。
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公开(公告)号：US5062302A
公开(公告)日：1991-11-05
申请号：US574387
申请日：1990-08-27
CPC分类号： G01L19/0618 , G01L19/0636 , G01L9/0042 , G01L9/0054 , G01L9/0073 , Y10S73/04
摘要： An electromechanical sensor is provided which comprises: first semiconductor wafer including a first stop surface residing in a first shallow recessed region of the first wafer; a second semiconductor wafer; wherein the first and second semiconductor wafers are laminated together such that the first recessed region of the first wafer and the second wafer define a first chamber in which the first stop surface and the second wafer are disposed close enough together such that the first stop surface restrains the second wafer from deflecting beyond the first stop surface; and an apparatus for measuring deflection of the second wafer.
摘要翻译： 提供了一种机电传感器，其包括：第一半导体晶片，其包括位于第一晶片的第一浅凹陷区域中的第一停止表面; 第二半导体晶片; 其中所述第一和第二半导体晶片被层压在一起，使得所述第一晶片和所述第二晶片的所述第一凹陷区域限定第一室，其中所述第一止动表面和所述第二晶片被设置得足够靠近在一起，使得所述第一止动表面限制 所述第二晶片从所述第一止动表面偏转; 以及用于测量第二晶片的偏转的装置。
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公开(公告)号：US10065851B2
公开(公告)日：2018-09-04
申请号：US13821598
申请日：2011-09-20
申请人： Janusz Bryzek
发明人： Janusz Bryzek
摘要： This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.
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公开(公告)号：US09095072B2
公开(公告)日：2015-07-28
申请号：US13821609
申请日：2011-09-16
CPC分类号： B81B7/008 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2207/07 , B81C1/0023 , H01L23/481 , H01L2224/131 , H01L2924/1461 , H05K1/18 , H01L2924/014 , H01L2924/00
摘要： This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side, and wherein the MEMS IC is coupled to the through silicon via.
摘要翻译： 本文件涉及多模微机械系统（MEMS）封装。 在一个示例中，多管芯MEMS封装可以包括被配置为耦合到电路板的控制器集成电路（IC），安装到控制器IC的第一侧的MEMS IC，穿过控制器IC的贯穿硅通孔 控制器IC的第一侧和第二侧，与第一侧相对的第二侧，并且其中MEMS IC耦合到通过硅通孔。
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公开(公告)号：US20130247668A1
公开(公告)日：2013-09-26
申请号：US13821619
申请日：2011-09-20
申请人： Janusz Bryzek
发明人： Janusz Bryzek
IPC分类号： G01P15/08
CPC分类号： G01P15/08 , G01C19/5776 , G01C25/00
摘要： This document discusses, among other things, an mode matching circuit for a inertial sensor including an oscillator circuit configured to selectively couple to a sense axis of an inertial sensor and to provide sense frequency information of the sense axis, a frequency comparator configured to receive the sense frequency information of the sense axis and drive frequency information of the inertial sensor, and to provide frequency difference information to a processor, and a programmable bias source configured to apply a bias voltage to the sense axis to set a sense frequency of the sense axis in response to a command from the processor, and to maintain a desired frequency difference between the sense frequency and a drive frequency of the inertial sensor.
摘要翻译： 本文件尤其涉及用于惯性传感器的模式匹配电路，其包括被配置为选择性地耦合到惯性传感器的感测轴并且提供感测轴的感测频率信息的振荡器电路，频率比较器被配置为接收 感测轴的感测频率信息和惯性传感器的驱动频率信息，并且向处理器提供频差信息，以及可编程偏置源，被配置为向感测轴施加偏置电压以设置感测轴的感测频率 响应于来自处理器的命令，并且保持感测频率和惯性传感器的驱动频率之间的期望的频率差。
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公开(公告)号：US20110031565A1
公开(公告)日：2011-02-10
申请号：US12849787
申请日：2010-08-03
申请人： David Lambe Marx , Cenk Acar , Sandeep Akkaraju , Janusz Bryzek
发明人： David Lambe Marx , Cenk Acar , Sandeep Akkaraju , Janusz Bryzek
CPC分类号： G01C19/5712 , G01P15/125 , G01P15/18 , G01P2015/082 , G01P2015/0842 , H01L2224/48091 , H01L2924/00014
摘要： Micromachined devices and methods for making the devices. The device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer. The first wafer is bonded to the second wafer. The via forms a closed loop when viewed in a direction normal to the top surface of the first wafer to thereby define an island electrically isolated. The method for fabricating the device includes: providing a first wafer having at least one via; bonding a second wafer having a substantially uniform thickness to the first wafer; and etching the bonded second wafer to form a micro-electromechanical-systems (MEMS) layer.
摘要翻译： 微加工设备和制造设备的方法。 该装置包括：具有至少一个通孔的第一晶片; 和具有微机电系统（MEMS）层的第二晶片。 第一晶片结合到第二晶片。 当从垂直于第一晶片的顶表面的方向观察时，通孔形成闭环，由此限定电隔离的岛。 制造该器件的方法包括：提供具有至少一个通孔的第一晶片; 将具有基本均匀厚度的第二晶片结合到第一晶片; 并蚀刻所述接合的第二晶片以形成微机电系统（MEMS）层。
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公开(公告)号：US07518493B2
公开(公告)日：2009-04-14
申请号：US11292946
申请日：2005-12-01
IPC分类号： B60C23/00
CPC分类号： B60C23/0408 , B81B3/0086 , B81B2201/0235 , B81B2201/0264 , B81B2207/015 , B81C2203/0118
摘要： The present invention provides a tire pressure sensor system that has multiple functions and is integrated into a small package. The system includes one or more Micro Electro Mechanical System (MEMS)-based sensors, including a MEMS-based pressure sensor; a MEMS-oscillator-based wireless signal transmitter; and a microcontroller, where the microcontroller processes the data generated by at least one of the MEMS-based sensors, controls at least one of the MEMS-based sensors, and controls the encoding and timing of transmission of data from the wireless signal transmitter. Preferably, the MEMS-based sensors, MEMS-oscillator-based wireless signal transmitter, and microcontroller are integrated onto one or more chips in one or more packages. The system also preferably includes a MEMS-based motion sensor, a low frequency (LF) receiver, an IC-based voltage sensor, a voltage regulator, a temperature sensor and a polarization voltage generator. Thus, the disclosed tire pressure sensor system is high in functionality, yet small in size.
摘要翻译： 本发明提供一种轮胎压力传感器系统，其具有多种功能并被集成到小包装中。 该系统包括一个或多个基于微机电系统（MEMS）的传感器，包括基于MEMS的压力传感器; 基于MEMS振荡器的无线信号发射机; 以及微控制器，其中微处理器由至少一个基于MEMS的传感器产生的数据控制至少一个基于MEMS的传感器，并且控制来自无线信号发射器的数据传输的编码和定时。 优选地，基于MEMS的传感器，基于MEMS振荡器的无线信号发射器和微控制器集成到一个或多个封装中的一个或多个芯片上。 该系统还优选地包括基于MEMS的运动传感器，低频（LF）接收器，基于IC的电压传感器，电压调节器，温度传感器和极化电压发生器。 因此，所公开的轮胎压力传感器系统的功能性高，但体积小。
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8.发明申请Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes 有权具有单晶硅电极的电容式微机电传感器公开(公告)号：US20070279832A1
公开(公告)日：2007-12-06
申请号：US11707347
申请日：2007-02-16
申请人： Curtis Ray , Janusz Bryzek
发明人： Curtis Ray , Janusz Bryzek
IPC分类号： H01G17/00
CPC分类号： G01L9/0073 , B81B3/0021 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , G01P15/0802 , G01P15/125 , G01P15/18 , G01P2015/0814 , G01P2015/0831 , G01P2015/084 , H01L28/40
摘要： The devices presented herein are capacitive sensors with single crystal silicon on all key stress points. Isolating trenches are formed by trench and refill forming dielectrically isolated conductive silicon electrodes for drive, sense and guards. For pressure sensing devices according to the invention, the pressure port is opposed to the electrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeticity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafer level packaging, small size, high performance and low cost.
摘要翻译： 本文提出的器件是在所有关键应力点上具有单晶硅的电容式传感器。 隔离沟槽由沟槽和替代填充形成介电隔离的导电硅电极形成，用于驱动，感测和保护。 对于根据本发明的压力感测装置，为了便于包装，压力端口与电线接合焊盘相对。 还描述了在平面加速度和平面外加速度测量的双轴加速度计。 通过将加速度计重复和旋转90度绕平面轴，平面中的第三轴容易实现。使用该工艺技术，可以创建谐振结构，角速率传感器，测辐射热计和许多其他结构。 主要优点是气密性，垂直通孔，垂直和水平间隙能力，单晶材料，晶圆级封装，体积小，性能高，成本低。
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公开(公告)号：US20050018958A1
公开(公告)日：2005-01-27
申请号：US10926705
申请日：2004-08-26
申请人： Cheng-Chung Huang , Steven Saeed Nasiri , Randall Sprague , Alex Harwit , Dmitry Vasily Bakin , Janusz Bryzek
发明人： Cheng-Chung Huang , Steven Saeed Nasiri , Randall Sprague , Alex Harwit , Dmitry Vasily Bakin , Janusz Bryzek
CPC分类号： H04Q11/0005 , G02B6/3546 , G02B6/3556 , G02B6/3586 , H04Q2011/0026 , H04Q2011/003 , H04Q2011/0037 , H04Q2011/0039 , H04Q2011/0049 , H04Q2011/0083
摘要： Methods of calibrating and operating optical switches as well as optical switches in which the orientations of mirrors are measured and controlled using control light beams and position sensing detectors are described. The present invention may provide high resolution control of a plurality of mirrors in an optical switch and thus allow the optical switch to cross-connect a large number of input and output ports with a low insertion loss.
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10.发明申请公开(公告)号：US20130277772A1
公开(公告)日：2013-10-24
申请号：US13821598
申请日：2011-09-20
申请人： Janusz Bryzek
发明人： Janusz Bryzek
CPC分类号： B81B3/0021 , B81B2201/0257 , B81B2201/0264 , B81B2207/012 , B81C1/00015 , B81C1/00158 , G01L9/0016 , G01L9/0042 , G01L9/0073 , G01L19/04
摘要： This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.
摘要翻译： 本文件尤其涉及一种包括具有振动膜片的硅片的装置，该芯片具有与硅晶片底部相对的硅晶片顶部，其具有从硅晶片顶部通过硅晶片延伸到硅晶片的顶部硅晶片端口 并且具有从硅模底部延伸到振动膜片的底部的底部硅模头端口，其中底部硅模具端口的横截面面积大于顶部的横截面面积 硅晶片端口，沿着硅晶片的底部设置的电容器电极，跨越底部硅晶片端口，电容器电极包括与顶部硅晶片端口共同延伸的第一信号产生部分，以及围绕 第一部分。
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