Method for the Design of Uniform Waveguide Light Extraction
    1.
    发明申请
    Method for the Design of Uniform Waveguide Light Extraction 审中-公开
    波导光均匀提取设计方法

    公开(公告)号:US20130317784A1

    公开(公告)日:2013-11-28

    申请号:US13477922

    申请日:2012-05-22

    IPC分类号: G06F17/50

    CPC分类号: G06F17/50 G06F17/5009

    摘要: A system and method are provided for designing a waveguide with uniform light extraction. Due to the complex nature of the calculations required, the method may be enabled as a set of software instructions, stored as a sequence of steps in a non-transitory memory for execution by a processor. The method accepts parameters for a waveguide panel, light sources, and light extraction features associated with the waveguide panel. Also accepted as an input are target light extraction goals. The method divides the waveguide panel into n subpanels, where n is an integer greater than 1. For each subpanel, waveguide propagation restrictions are defined. The light extraction features are modeled for each subpanel in response to the target extraction goals, and the waveguide, panel is designed using the light extraction features modeled for each subpanel.

    摘要翻译: 提供了一种用于设计具有均匀光提取的波导的系统和方法。 由于所需计算的复杂性,所述方法可被启用为一组软件指令,存储为非暂时性存储器中的步骤序列,以供处理器执行。 该方法接受与波导面板相关联的波导面板,光源和光提取特征的参数。 也被接受为输入的目标光提取目标。 该方法将波导面板划分为n个子面板,其中n是大于1的整数。对于每个子面板,定义了波导传播限制。 响应于目标提取目标,为每个子面板建模光提取特征,并且使用为每个子面板建模的光提取特征来设计波导面板。

    ULTRA-THIN WAVEGUIDE WITH CONTROLLED LIGHT EXTRACTION
    2.
    发明申请
    ULTRA-THIN WAVEGUIDE WITH CONTROLLED LIGHT EXTRACTION 失效
    超轻型波导带控制光提取

    公开(公告)号:US20130315534A1

    公开(公告)日:2013-11-28

    申请号:US13484346

    申请日:2012-05-31

    IPC分类号: G02B6/26

    CPC分类号: G02B6/0035

    摘要: A system and method are provided for using bubble structures to control the extraction of light from a waveguide top surface. The method determines a maximum angle (α) of light propagation through a waveguide medium relative to a first horizontal direction parallel to a waveguide top surface. A plurality of bubble structures is provided having a refractive index less than the waveguide medium. The bubble structures have a base, and sides formed at an acute angle upwards with respect to the base. The bubble structure bases are separated by gap (W), have a height (H), and have a top separated from a waveguide top surface by a space (h). The method varies the gap (W), the height (H), and the space (h). In response, the intensity of light extraction at even the maximum angle (α) of light propagation, can be controlled from the waveguide top surface.

    摘要翻译: 提供了一种用于使用气泡结构来控制从波导顶表面提取光的系统和方法。 该方法确定通过波导介质相对于平行于波导顶表面的第一水平方向的光的传播的最大角度(α)。 提供了具有小于波导介质的折射率的多个气泡结构。 气泡结构具有基部,并且相对于基部以锐角向上形成侧面。 气泡结构基座由间隙(W)分开,具有高度(H),并且具有从波导顶表面与空间(h)分离的顶部。 该方法改变间隙(W),高度(H)和空间(h)。 作为响应,即使在光传播的最大角度(α)处的光提取的强度也可以从波导顶表面控制。

    Switchable Viewing Angle Display with Local Dimming Function
    3.
    发明申请
    Switchable Viewing Angle Display with Local Dimming Function 有权
    具有局部调光功能的可切换视角显示

    公开(公告)号:US20120050651A1

    公开(公告)日:2012-03-01

    申请号:US13173343

    申请日:2011-06-30

    IPC分类号: G02F1/1335

    摘要: A switchable viewing angle display method is provided. The method provides a front panel array of display pixels. Also provided is an array of microlenses underlying the array of display pixels. Each microlens has a focal point and each microlens is associated with a corresponding block of display pixels. A backlight panel has an edge-coupled waveguide pipe with an optical input connected to a column of light emitting diodes (LEDs). The backlight panel includes a top array of selectively enabled extraction pixels, a planar mirror underlying the waveguide pipe, and a bottom array of selectively enabled extraction pixels interposed between the waveguide pipe and the planar mirror. In response to accepting a display viewing angle change command, an extraction pixel is enabled from either the top array or the bottom array, and a waveguide pipe light extraction position is formed, changing the viewing angle.

    摘要翻译: 提供了可切换的视角显示方法。 该方法提供了显示像素的前面板阵列。 还提供了显示像素阵列下方的微透镜阵列。 每个微透镜具有焦点,并且每个微透镜与相应的显示像素块相关联。 背光面板具有边缘耦合波导管,其具有连接到发光二极管(LED)列的光学输入。 背光面板包括有选择地启用的提取像素的顶部阵列,位于波导管下面的平面镜,以及置于波导管和平面镜之间的有选择地启用的提取像素的底部阵列。 响应于接受显示视角改变命令,可以从顶部阵列或底部阵列启用提取像素,并且形成波导管光提取位置,改变视角。

    Switchable Viewing Angle Display
    4.
    发明申请
    Switchable Viewing Angle Display 有权
    可切换的视角显示

    公开(公告)号:US20120050342A1

    公开(公告)日:2012-03-01

    申请号:US13104896

    申请日:2011-05-10

    IPC分类号: G09G3/36 G02F1/1335 G09G5/10

    摘要: A switchable viewing angle display method is provided, using arrayed microlenses and a waveguide pipe with selectable light extraction positions. The method provides a front panel array of display pixels. Also provided is an array of microlenses underlying the array of display pixels. Each microlens has a focal point and each microlens is associated with a corresponding block of display pixels. A backlight panel has an edge-coupled waveguide pipe with an optical input connected to a column of light emitting diodes (LEDs). The backlight panel includes an array extraction pixels, each extraction pixel underlying a corresponding microlens, and the backlight panel also includes a planar mirror underlying the waveguide pipe. In response to a display viewing angle change command, a waveguide pipe's light extraction position selected, which is the distance between the extraction pixels and their corresponding microlenses, and the display viewing angle is changed.

    摘要翻译: 提供可切换的视角显示方法,使用阵列微透镜和具有可选光提取位置的波导管。 该方法提供了显示像素的前面板阵列。 还提供了显示像素阵列下方的微透镜阵列。 每个微透镜具有焦点,并且每个微透镜与相应的显示像素块相关联。 背光面板具有边缘耦合波导管,其具有连接到发光二极管(LED)列的光学输入。 背光面板包括阵列提取像素,每个提取像素位于对应的微透镜下方,并且背光面板还包括位于波导管下方的平面镜。 响应于显示视角改变命令,选择了作为提取像素与其对应的微透镜之间的距离的波导管的光提取位置和显示视角。

    Dynamic LED Driving Current Compensation for Cross-Panel Backlight Illumination Uniformity
    5.
    发明申请
    Dynamic LED Driving Current Compensation for Cross-Panel Backlight Illumination Uniformity 审中-公开
    动态LED驱动电流补偿用于交叉面板背光照明均匀性

    公开(公告)号:US20120050339A1

    公开(公告)日:2012-03-01

    申请号:US12875891

    申请日:2010-09-03

    IPC分类号: G09G5/10

    CPC分类号: G09G3/342 G09G2320/0233

    摘要: A dynamic light emitting diode (LED) driving current compensation method is provided for ensuring cross-panel backlight illumination uniformity in a display device. A backlight panel includes a plurality of waveguide pipes and a front panel with a plurality of pixel rows. Each row overlies a corresponding waveguide pipe and includes a plurality of selectively enabled pixels formed in a sequence along the row. Light is supplied from a plurality of LEDs, where each LED supplies light to a corresponding waveguide pipe. For each front panel row, a pixel is selected for enablement and an LED drive current is selected in response to the enabled pixel. The LED drive current is selected in response to the distance between the waveguide pipe position underlying an enabled pixel in a corresponding front panel row and the first light interface.

    摘要翻译: 提供了动态发光二极管(LED)驱动电流补偿方法,用于确保显示装置中的跨面板背光照明均匀性。 背光面板包括多个波导管和具有多个像素行的前面板。 每行覆盖相应的波导管并且包括沿着该行以顺序形成的多个有选择地启用的像素。 光从多个LED提供,其中每个LED将光提供给相应的波导管。 对于每个前面板行,选择一个像素用于启用,并且响应于使能的像素选择LED驱动电流。 响应于相应前面板行中的启用像素和第一光接口之间的波导管位置之间的距离来选择LED驱动电流。

    Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film
    6.
    发明授权
    Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film 有权
    用纳米晶硅嵌入绝缘膜形成发光器件的方法

    公开(公告)号:US07998884B2

    公开(公告)日:2011-08-16

    申请号:US12126430

    申请日:2008-05-23

    IPC分类号: H01L21/469

    摘要: A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

    摘要翻译: 使用硅(Si)纳米晶体Si绝缘膜的发光器件具有相关的制造方法。 该方法提供掺杂半导体或金属底电极。 使用高密度等离子体增强化学气相沉积(HDPECVD)工艺,淀积厚度在30至200纳米(nm)范围内的半导体电极上的Si绝缘体膜。 例如,膜可以是SiO x,其中X小于2,Si 3 N x,其中X小于4,或SiC x,其​​中X小于1.Si绝缘膜退火,结果Si纳米晶体为 在电影中形成。 然后,形成覆盖Si绝缘膜的透明金属电极。 退火的Si纳米晶SiO x膜具有小于20伏特的导通电压,如关于大于0.03瓦/平方米的表面发射功率所限定的。

    Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device
    7.
    发明申请
    Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device 失效
    半导体纳米颗粒嵌入式绝缘膜发光器件的制造

    公开(公告)号:US20090058266A1

    公开(公告)日:2009-03-05

    申请号:US12267698

    申请日:2008-11-10

    IPC分类号: H01J1/63 B05D5/12

    摘要: A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.

    摘要翻译: 提供一种用于制造用于短波长发光应用的半导体纳米颗粒嵌入式Si绝缘膜的方法。 该方法提供底部电极,并沉积包含覆盖底部电极的N,O或C元素的半导体纳米颗粒嵌入的Si绝缘膜。 在退火之后,半导体纳米颗粒嵌入的Si绝缘膜在475至750纳米的波长范围内具有峰值光致发光(PL)。

    Plasmonic Device Tuned using Liquid Crystal Molecule Dipole Control
    8.
    发明申请
    Plasmonic Device Tuned using Liquid Crystal Molecule Dipole Control 有权
    使用液晶分子偶极子控制调谐的等离子体装置

    公开(公告)号:US20110109821A1

    公开(公告)日:2011-05-12

    申请号:US12635349

    申请日:2009-12-10

    IPC分类号: G02F1/133

    摘要: A plasmonic display device is provided with liquid crystal dipole molecule control. The device is made from a first set of electrodes including at least one electrically conductive top electrode and at least one electrically conductive bottom electrode capable of generating a first electric field in a first direction. A second set of electrodes, including an electrically conductive right electrode and an electrically conductive left electrode, is capable of generating a second electric field in a second first direction. A dielectric layer overlies the bottom electrode, made from a liquid crystal material with molecules having dipoles responsive to an electric field. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the first and second set of electrodes and in contact with the dielectric layer. In one aspect, the plasmonic layer is embedded in the dielectric layer.

    摘要翻译: 具有液晶偶极子分子控制的等离子体显示装置。 该装置由第一组电极制成,其包括至少一个导电顶电极和能够沿第一方向产生第一电场的至少一个导电底电极。 包括导电右电极和导电左电极的第二组电极能够在第二第一方向上产生第二电场。 电介质层覆盖在液晶材料制成的底部电极上,分子具有响应于电场的偶极子。 包括多个离散等离子体激元的等离子体激元层介于第一和第二组电极之间并与电介质层接触。 在一个方面,等离子体激元层嵌入电介质层。

    Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film
    9.
    发明申请
    Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film 有权
    具有纳米晶硅嵌入式绝缘体膜的发光器件

    公开(公告)号:US20080224164A1

    公开(公告)日:2008-09-18

    申请号:US12126430

    申请日:2008-05-23

    IPC分类号: H01L33/00 H01L21/28 H01J1/63

    摘要: A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

    摘要翻译: 使用硅(Si)纳米晶体Si绝缘膜的发光器件具有相关的制造方法。 该方法提供掺杂半导体或金属底电极。 使用高密度等离子体增强化学气相沉积(HDPECVD)工艺,淀积厚度在30至200纳米(nm)范围内的半导体电极上的Si绝缘体膜。 例如,膜可以是SiO x,其中X小于2,Si 3 N x,其中X小于4,或SiC x,其​​中X小于1.Si绝缘膜退火,结果Si纳米晶体为 在电影中形成。 然后,形成覆盖Si绝缘膜的透明金属电极。 退火的Si纳米晶SiO x膜具有小于20伏特的导通电压,如关于大于0.03瓦/平方米的表面发射功率所限定的。

    Ultra-thin waveguide with controlled light extraction
    10.
    发明授权
    Ultra-thin waveguide with controlled light extraction 失效
    超薄波导,带有光控提取

    公开(公告)号:US08630518B2

    公开(公告)日:2014-01-14

    申请号:US13484346

    申请日:2012-05-31

    IPC分类号: G02B6/26

    CPC分类号: G02B6/0035

    摘要: A system and method are provided for using bubble structures to control the extraction of light from a waveguide top surface. The method determines a maximum angle (α) of light propagation through a waveguide medium relative to a first horizontal direction parallel to a waveguide top surface. A plurality of bubble structures is provided having a refractive index less than the waveguide medium. The bubble structures have a base, and sides formed at an acute angle upwards with respect to the base. The bubble structure bases are separated by gap (W), have a height (H), and have a top separated from a waveguide top surface by a space (h). The method varies the gap (W), the height (H), and the space (h). In response, the intensity of light extraction at even the maximum angle (α) of light propagation, can be controlled from the waveguide top surface.

    摘要翻译: 提供了一种用于使用气泡结构来控制从波导顶表面提取光的系统和方法。 该方法确定通过波导介质相对于平行于波导顶表面的第一水平方向的光的传播的最大角度(α)。 提供了具有小于波导介质的折射率的多个气泡结构。 气泡结构具有基部,并且相对于基部以锐角向上形成侧面。 气泡结构基座由间隙(W)分开,具有高度(H),并且具有从波导顶表面与空间(h)分离的顶部。 该方法改变间隙(W),高度(H)和空间(h)。 作为响应,即使在光传播的最大角度(α)处的光提取的强度也可以从波导顶表面控制。