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    Trench power MOSFET fabrication using inside/outside spacers
    3.
    发明授权
    Trench power MOSFET fabrication using inside/outside spacers 有权
    沟槽功率MOSFET制造使用内/外隔板

    公开(公告)号：US07390717B2

    公开(公告)日：2008-06-24

    申请号：US11054451

    申请日：2005-02-09

    申请人： Jianjun Cao ,  Paul Harvey ,  David Kent ,  Robert Montgomery ,  Kyle Spring

    发明人： Jianjun Cao ,  Paul Harvey ,  David Kent ,  Robert Montgomery ,  Kyle Spring

    IPC分类号： H01L21/8242 ,  H01L21/336 ,  H01L21/20

    CPC分类号： H01L29/7813 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734

    摘要： A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are formed in the semiconductor body along the trench edges and are then driven. Insulation caps are then formed over the trenches. Outside spacers are next formed along the sides of the caps. Using these spacers as masks, the semiconductor surface is etched and high conductivity contact regions formed. The outside spacers are then removed and source and drain contacts formed. Alternatively, the source implants are not driven. Rather, prior to outside spacer formation a second source implant is performed. The outside spacers are then formed, portions of the second source implant etched, any remaining source implant driven, and the contact regions formed. The gate electrodes are either recessed below or extend above the semiconductor surface.

    摘要翻译： 用于沟槽型功率半导体器件的制造工艺包括在半导体表面上形成间隔物内部。 使用间隔物作为掩模，在半导体本体中形成具有栅极的沟槽。 在去除间隔物之后，沿着沟槽边缘在半导体本体中形成源植入物，然后被驱动。 然后在沟槽上形成绝缘帽。 接下来沿着盖的侧面形成外部间隔物。 使用这些间隔物作为掩模，蚀刻半导体表面并形成高导电性接触区域。 然后移除外部隔离物并形成源极和漏极接触。 或者，源植入物不被驱动。 相反，在外部间隔物形成之前，执行第二源植入。 然后形成外部间隔物，蚀刻第二源植入物的部分，驱动所有剩余的源植入物和形成的接触区域。 栅极电极在半导体表面之下凹进或延伸。

    Trench power MOSFET fabrication using inside/outside spacers
    4.
    发明申请
    Trench power MOSFET fabrication using inside/outside spacers 有权
    沟槽功率MOSFET制造使用内/外隔板

    公开(公告)号：US20050208724A1

    公开(公告)日：2005-09-22

    申请号：US11054451

    申请日：2005-02-09

    申请人： Jianjun Cao ,  Paul Harvey ,  David Kent ,  Robert Montgomery ,  Kyle Spring

    发明人： Jianjun Cao ,  Paul Harvey ,  David Kent ,  Robert Montgomery ,  Kyle Spring

    IPC分类号： H01L21/336 ,  H01L21/8242 ,  H01L29/45 ,  H01L29/49 ,  H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/66734

    摘要： A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are formed in the semiconductor body along the trench edges and are then driven. Insulation caps are then formed over the trenches. Outside spacers are next formed along the sides of the caps. Using these spacers as masks, the semiconductor surface is etched and high conductivity contact regions formed. The outside spacers are then removed and source and drain contacts formed. Alternatively, the source implants are not driven. Rather, prior to outside spacer formation a second source implant is performed. The outside spacers are then formed, portions of the second source implant etched, any remaining source implant driven, and the contact regions formed. The gate electrodes are either recessed below or extend above the semiconductor surface.

    摘要翻译： 用于沟槽型功率半导体器件的制造工艺包括在半导体表面上形成间隔物内部。 使用间隔物作为掩模，在半导体本体中形成具有栅极的沟槽。 在去除间隔物之后，沿着沟槽边缘在半导体本体中形成源植入物，然后被驱动。 然后在沟槽上形成绝缘帽。 接下来沿着盖的侧面形成外部间隔物。 使用这些间隔物作为掩模，蚀刻半导体表面并形成高导电性接触区域。 然后移除外部隔离物并形成源极和漏极接触。 或者，源植入物不被驱动。 相反，在外部间隔物形成之前，执行第二源植入。 然后形成外部间隔物，蚀刻第二源植入物的部分，驱动所有剩余的源植入物和形成的接触区域。 栅极电极在半导体表面之下凹进或延伸。