Fuel cell system and method of operating fuel cell system
    1.
    发明授权
    Fuel cell system and method of operating fuel cell system 失效
    燃料电池系统及运行燃料电池系统的方法

    公开(公告)号:US06727011B2

    公开(公告)日:2004-04-27

    申请号:US10359351

    申请日:2003-02-05

    IPC分类号: H01M1200

    摘要: A fuel cell system includes a fuel cell that supplies an oxidizer containing oxygen to a positive electrode, supplies a fuel gas containing hydrogen to a negative electrode and generates power, a battery containing at least water as an electrolyte, a hydrogen tank that stores hydrogen generated from the battery and a hydrogen pipe that supplies hydrogen in the hydrogen tank to the fuel cell.

    摘要翻译: 一种燃料电池系统,包括向正极供给含有氧的氧化剂的燃料电池,向负极供给含有氢的燃料气体并产生电力,至少含有水作为电解质的电池,蓄积氢的氢罐 从电池和在氢罐中向氢燃料电池供应氢的氢管。

    Power controller, power generation system, and control method of power controller
    2.
    发明授权
    Power controller, power generation system, and control method of power controller 失效
    功率控制器,发电系统以及电源控制器的控制方法

    公开(公告)号:US06800963B2

    公开(公告)日:2004-10-05

    申请号:US10290685

    申请日:2002-11-08

    IPC分类号: H02J100

    摘要: A power controller includes power storage means for storing DC power from DC power generation means that. Power conversion means include a DC/DC converter that converts a voltage when receiving a DC input. Charge and discharge means discharge electric power from the power storage means to the power conversion means and charge DC power from the DC power generation means in the power storage means. The charge and discharge means are provided among the DC power generation means, the power storage means and the power conversion means. Detection means detect electric energy of an external power load to which power from at least the power conversion means is supplied. Control means control operation of the charge and discharge means on the basis of the detected electric energy.

    摘要翻译: 功率控制器包括用于存储来自直流发电装置的直流电力的蓄电装置。 功率转换装置包括DC / DC转换器,其在接收DC输入时转换电压。放电装置将电力从蓄电装置放电到电力转换装置,并对来自直流发电装置的直流电力进行蓄电 手段。 充电和放电装置设置在直流发电装置,蓄电装置和电力转换装置之间。检测装置检测来自至少电力转换装置供电的外部电力负载的电能。控制装置控制 基于检测到的电能对充放电手段进行操作。

    Three-dimensional metamaterial having function of allowing and inhibiting propagation of electromagnetic waves
    5.
    发明授权
    Three-dimensional metamaterial having function of allowing and inhibiting propagation of electromagnetic waves 有权
    具有允许和禁止电磁波传播的功能的三维超材料

    公开(公告)号:US08669833B2

    公开(公告)日:2014-03-11

    申请号:US13375945

    申请日:2010-06-03

    申请人: Tetsuya Ueda

    发明人: Tetsuya Ueda

    IPC分类号: H01P1/205 H01P7/10

    摘要: In a metamaterial, a dielectric layer includes a host medium and dielectric bodies disposed in rows with predetermined intervals therebetween is sandwiched between a pair of conductive mesh plates each having holes, thereby forming a functional layer including dielectric resonators corresponding to the dielectric bodies. The metamaterial is configured by laminating the functional layers. The holes and the dielectric resonators are positioned coaxially and an electromagnetic wave is propagated in each of the functional layers in a propagation direction perpendicular to a multi-layered laminate surface such that the metamaterial function as a left-handed metamaterial in relation to the propagation direction perpendicular to the multi-layered surface.

    摘要翻译: 在超材料中,电介质层包括主介体,并且以一定间隔设置成行的电介质体夹在一对具有孔的导电网板之间,从而形成包括对应于介电体的介电谐振器的功能层。 超材料通过层压功能层而构成。 孔和介质谐振器同轴地定位,并且电磁波在垂直于多层叠层表面的传播方向上在每个功能层中传播,使得超材料相对于传播方向作为左旋超材料 垂直于多层表面。

    Transmission line microwave apparatus including at least one non-reciprocal transmission line part between two parts
    6.
    发明授权
    Transmission line microwave apparatus including at least one non-reciprocal transmission line part between two parts 有权
    传输线微波装置包括两部分之间的至少一个不可逆传输线部分

    公开(公告)号:US08294538B2

    公开(公告)日:2012-10-23

    申请号:US12530102

    申请日:2008-03-05

    申请人: Tetsuya Ueda

    发明人: Tetsuya Ueda

    IPC分类号: H01P3/08

    摘要: A transmission line microwave apparatus includes at least one nonreciprocal transmission line part, which includes a series branch circuit equivalently including a capacitive element and a shunt branch circuit equivalently including an inductive element. The nonreciprocal transmission line part has gyrotropic characteristic by being magnetized in a magnetization direction different from the propagation direction of a microwave, and has an asymmetric structure to a plane formed by the propagation direction and the magnetization direction. The nonreciprocal transmission line part has a propagation constant and an operating frequency set in a dispersion curve that represents a relation between the propagation constant and the operating frequency so that the propagation constant in the forward direction and the propagation constant in the backward direction have nonreciprocal phase characteristics different from each other. A microwave transmission line is constituted by cascade-connecting at least one non-reciprocal transmission line part between first and second ports.

    摘要翻译: 传输线微波装置包括至少一个不可逆传输线部分,其包括等效地包括电容元件的串联分支电路和等效地包括电感元件的分流分支电路。 不可逆传输线部分通过在与微波的传播方向不同的磁化方向上磁化而具有陀螺特性,并且具有与由传播方向和磁化方向形成的平面不对称的结构。 不可逆传输线部分具有传播常数和在表示传播常数与工作频率之间的关系的色散曲线中设定的工作频率,使得正向传播常数和反向传播常数具有非相互相位 特征彼此不同。 微波传输线通过级联连接第一和第二端口之间的至少一个不可逆传输线部分而构成。

    Method for fabricating semiconductor device and semiconductor device
    7.
    发明授权
    Method for fabricating semiconductor device and semiconductor device 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号:US08034707B2

    公开(公告)日:2011-10-11

    申请号:US12897416

    申请日:2010-10-04

    申请人: Tetsuya Ueda

    发明人: Tetsuya Ueda

    IPC分类号: H01L21/4763

    摘要: A method for fabricating a semiconductor device includes the steps of forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分,从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜,其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

    Semiconductor device with a low dielectric constant film between lower interconnections
    8.
    发明授权
    Semiconductor device with a low dielectric constant film between lower interconnections 有权
    在低互连之间具有低介电常数膜的半导体器件

    公开(公告)号:US07622807B2

    公开(公告)日:2009-11-24

    申请号:US12277933

    申请日:2008-11-25

    申请人: Tetsuya Ueda

    发明人: Tetsuya Ueda

    IPC分类号: H01L29/40

    摘要: A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分,从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜,其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

    Semiconductor device and method for fabricating the same
    9.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07265450B2

    公开(公告)日:2007-09-04

    申请号:US10900272

    申请日:2004-07-28

    IPC分类号: H01L23/48

    摘要: An inventive semiconductor device includes: a lower interlayer dielectric film provided on a substrate; a lower interconnect made up of a lower barrier metal layer formed along a wall surface of a lower interconnect groove in the lower interlayer dielectric film, and a copper film; and an upper plug and an upper interconnect. The upper plug passes through a silicon nitride film and comes into contact with the copper film of the lower interconnect. The lower interconnect is provided with a large number of convex portions buried in concave portions of the lower interconnect groove. Thus, voids in the lower interconnect are also gettered by the convex portions. Accordingly, the concentration of voids in the contact area between the lower interconnect and the upper plug is relieved, and an increase in contact resistance is suppressed.

    摘要翻译: 本发明的半导体器件包括:设置在基板上的下层间绝缘膜; 由沿下层间电介质膜的下互连槽的壁面形成的下阻挡金属层和铜膜构成的下互连件; 以及上部插头和上部互连件。 上塞通过氮化硅膜并与下互连的铜膜接触。 下部互连件设置有埋在下部互连槽的凹部中的大量凸部。 因此,下部互连件中的空隙也被凸起部分吸收。 因此,下部布线和上部插塞之间的接触区域中的空隙的浓度被释放,并且抑制了接触电阻的增加。