-
1.发明授权
公开(公告)号：US5868906A
公开(公告)日：1999-02-09
申请号：US691427
申请日：1996-08-02
CPC分类号： B01D61/362 , B01D3/146 , C07C29/80 , C07C29/82 , Y10S159/27 , Y10S203/17
摘要： A method for the on-site reprocessing of isopropyl alcohol used in semiconductor manufacturing, to generate an ultradry and ultrapure isopropyl alcohol. This ultradry and ultrapure isopropyl alcohol is produced through a pervaporation step, followed by double distillation. In the first distillation step, an autonomous azeotropic self-stripping distillation column is used to produce an ultradry and partially purified isopropyl alcohol. In the next step, the isopropyl alcohol is distilled in an overhead product distillation column, to produce an ultrapure and ultradry isopropyl alcohol. Alternatively, if the feed isopropyl alcohol contains less than 2000 ppm water, the pervaporation step may be omitted.The resulting isopropyl alcohol has between a high of 100 parts per million (ppm) and a low of 0.1 ppm of water in the isopropyl alcohol. It also has zero particles per milliliter of a size larger than 2.0 microns, zero to 2 particles per milliliter of a size of 0.5 micron to 2.0 microns, zero to 30 particles per milliliter of a size between 0.1 microns and 0.5 microns, an unspecified number of particles per milliliter below 0.1 microns, 1 part per trillion (ppt) to 1 part per billion (ppb) of any specific trace impurity such as metals, anions, and cations, and 10 ppt to 10 ppm of any other specific trace organic substances.
摘要翻译： 用于半导体制造中的异丙醇的现场再处理方法，以产生超纯和超纯异丙醇。 通过全蒸发步骤生产超纯超纯异丙醇，然后进行双蒸馏。 在第一蒸馏步骤中，使用自主共沸自剥离蒸馏塔来生产超纯和部分纯化的异丙醇。 在下一步骤中，将异丙醇在塔顶馏出物蒸馏塔中蒸馏，生成超纯和超纯异丙醇。 或者，如果进料异丙醇含有少于2000ppm的水，则可以省略渗透蒸发步骤。 得到的异丙醇在异丙醇中的百万分之100ppm（ppm）和0.1ppm的低含量之间。 它还具有每毫升小于2.0微米的零颗粒，每毫升为零至2微米的0.5微米至2.0微米的零微粒，每毫升0.1微米至0.5微米之间的每毫升为零至30微米，未指定数量 每毫升0.1微米以下的颗粒，每万亿分之1份（ppt）至十亿分之一（ppb）的任何特定痕量杂质如金属，阴离子和阳离子，10磅至10ppm的任何其他特定微量有机物质 。
-
2.发明授权Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly 失效使用双极电极组件同时进行非接触电化学电镀和半导体晶片平面化的方法
公开(公告)号：US6143155A
公开(公告)日：2000-11-07
申请号：US96131
申请日：1998-06-11
IPC分类号： C25D5/04 , C25D7/12 , H01L21/288 , H01L21/321 , H01L21/768 , C25D5/00
CPC分类号： C25D7/001 , C25D5/04 , C25D7/123 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Simultaneous non-contact plating and planarizing of copper interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode and a metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.
摘要翻译： 通过提供双极电极和半导体晶片的金属化表面之间的相对运动，而不需要与晶片的物理接触或与其直接电连接，来实现半导体晶片制造中的铜互连的同时非接触电镀和平坦化。
-
公开(公告)号：US5755614A
公开(公告)日：1998-05-26
申请号：US819533
申请日：1997-03-17
CPC分类号： B24B57/02 , B24B37/04 , B24B55/03 , Y10S134/902
摘要： Recycled slurry is continuously blended with the slurry in use to provide a consistent polishing rate while consuming or discarding a small fraction of the slurry flowing continuously across the polishing pad. The slurry is recovered in a catch ring and fed to a recycle loop to blend the recovered slurry with fresh slurry, rejuvenating chemicals, or water; test the blend; filter the blend; and return the blend to the polishing pad. The volume returned to the pad slightly exceeds the volume recovered, causing the catch ring to overflow. Rinse water is recycled in the same fashion to keep the polishing pad wet between polishing cycles.
摘要翻译： 再循环浆料与浆料在使用中连续混合以提供一致的抛光速率，同时消耗或丢弃连续流过抛光垫的少量浆料。 将浆料回收到捕获环中并进料到循环回路中以将回收的浆料与新鲜浆料，再生化学品或水混合; 测试混合物; 过滤混合物; 并将混合物返回到抛光垫。 返回到垫的体积稍微超过恢复的体积，导致卡环溢出。 冲洗水以相同的方式回收，以保持抛光垫在抛光周期之间变湿。
-
4.发明授权Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly 失效使用双极电极组件对半导体晶片进行非接触金属镀覆的方法和装置
公开(公告)号：US6132586A
公开(公告)日：2000-10-17
申请号：US96220
申请日：1998-06-11
IPC分类号： C25D5/00 , H01L21/288 , C25D5/02
CPC分类号： H01L21/7684 , H01L21/2885 , C25D5/00
摘要： Plating of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.
摘要翻译： 通过提供双极电极组件与半导体晶片的单个金属化表面之间的相对运动，而不需要与晶片的物理接触或与其直接电连接来进行半导体晶片制造中的金属互连的电镀。
-
5.发明授权
公开(公告)号：US5855792A
公开(公告)日：1999-01-05
申请号：US855688
申请日：1997-05-14
申请人： John A. Adams , Gerald A. Krulik
发明人： John A. Adams , Gerald A. Krulik
CPC分类号： H01L21/67028 , C02F9/00 , C02F2103/346 , Y10S134/902 , Y10S210/90 , Y10S438/906
摘要： Waste water from an apparatus that rinses particles from semiconductor wafers is collected in a tank. A pump sends waste water from the tank through a particle filter and onward to a supply inlet for initial rinse stages of the processing apparatus. Some of the waste water is bleed from the tank and replenished by fresh water introduced into the final rinse stage of the apparatus. If the semiconductor processing so dictates, chemicals may be added to the waste water to alter the pH and/or prevent the precipitation of solids in the tank. The addition of such chemicals can be controlled automatically in response to sensed characteristics of the waste water.
摘要翻译： 将从半导体晶片冲洗颗粒的装置的废水收集在罐中。 泵将来自罐的废水通过颗粒过滤器送到处理设备的初始漂洗阶段的供应入口。 一些废水从罐中排出，并通过引入设备的最后漂洗阶段的淡水补充。 如果半导体处理如此规定，可以将化学品添加到废水中以改变pH和/或防止罐中固体的沉淀。 响应于感测到的废水的特性，可以自动控制这些化学品的添加。
-
6.发明授权Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly 失效使用双极电极组件平坦化金属化半导体晶片的方法和装置
公开(公告)号：US6121152A
公开(公告)日：2000-09-19
申请号：US96309
申请日：1998-06-11
IPC分类号： B23H5/08 , C25F3/16 , H01L21/321 , H01L21/302
CPC分类号： B23H5/08 , C25F3/16 , H01L21/32115 , Y10S438/977
摘要： Planarization of metal interconnections in semiconductor wafer manufacturing is performed by providing relative motion between a bipolar electrode assembly scanned and a single metallized surface of a semiconductor wafer without necessary physical contact with the wafer or direct electrical connection thereto.
摘要翻译： 在半导体晶片制造中的金属互连的平面化是通过提供扫描的双极电极组件和半导体晶片的单个金属化表面之间的相对运动来进行的，而不需要与晶片的物理接触或与其直接电连接。
-
公开(公告)号：US5876685A
公开(公告)日：1999-03-02
申请号：US707907
申请日：1996-09-11
申请人： Gerald A. Krulik , John A. Adams , Dieter Dornisch , David W. Persichini , Christopher S. Blatt
发明人： Gerald A. Krulik , John A. Adams , Dieter Dornisch , David W. Persichini , Christopher S. Blatt
CPC分类号： C02F9/00 , C01B7/191 , C01B7/196 , C02F1/583 , C02F1/60 , C02F1/04 , C02F1/42 , C02F1/66 , C02F2101/14 , C02F2103/346
摘要： A method for the removal and purification of substantially all of the fluoride ions contained in a solution containing greater than 10 parts per million (ppm) fluoride ion, a mixture of other anions, silicon in the form of a fluorosilicic acid, silicic acid, silicates, or silicon tetrafluoride, and optionally also containing complex metal fluorides, to produce an ultrapure hydrofluoric acid, comprising the steps of (a) adjusting the pH of the solution to an alkaline pH to hydrolyze the fluorosilicic acid and any complex metal fluorides; (b) removing the fluoride ions and other anions from the solution by passing the solution through an ion exchange resin, where the ion exchange resin is adapted to adsorb substantially all of the fluoride passed over the ion exchange resin; (c) displacing the fluoride ions and other anions bound to the ion exchange resin, thereby forming a mixture of anions in an effluent emanating from resin; (d) optionally concentrating the effluent at a high pH and then lowering the pH; and (e) distilling the mixture of anions in the effluent from a sulfuric acid solution to generate ultrapure hydrofluoric acid. An apparatus useful for practicing the method is also disclosed.
摘要翻译： 除去和纯化含有大于10ppm（ppm）氟离子，其它阴离子的混合物，氟硅酸形式的硅，硅酸，硅酸盐的溶液中所含的基本上所有的氟离子的方法 ，或四氟化硅，以及任选地还含有复合金属氟化物，以制备超纯氢氟酸，包括以下步骤：（a）将溶液的pH调节至碱性pH以水解氟硅酸和任何复合金属氟化物; （b）通过使溶液通过离子交换树脂从溶液中除去氟离子和其它阴离子，其中离子交换树脂适于吸附通过离子交换树脂的基本上所有的氟化物; （c）置换与离子交换树脂结合的氟离子和其它阴离子，从而在由树脂发出的流出物中形成阴离子的混合物; （d）任选地在高pH下浓缩流出物，然后降低pH值; 和（e）将来自硫酸溶液的流出物中的阴离子混合物蒸馏以产生超纯氢氟酸。 还公开了一种用于实施该方法的装置。
-
公开(公告)号：US5664990A
公开(公告)日：1997-09-09
申请号：US681794
申请日：1996-07-29
CPC分类号： B24B57/02 , B24B37/04 , B24B55/03 , Y10S134/902
摘要： Recycled slurry is continuously blended with the slurry in use to provide a consistent polishing rate while consuming or discarding a small fraction of the slurry flowing continuously across the polishing pad. The slurry is recovered in a catch ring and fed to a recycle loop to blend the recovered slurry with fresh slurry, rejuvenating chemicals, or water; test the blend; filter the blend; and return the blend to the polishing pad. The volume returned to the pad slightly exceeds the volume recovered, causing the catch ring to overflow. Rinse water is recycled in the same fashion to keep the polishing pad wet between polishing cycles.
摘要翻译： 再循环浆料与浆料在使用中连续混合以提供一致的抛光速率，同时消耗或丢弃连续流过抛光垫的少量浆料。 将浆料回收到捕获环中并进料到循环回路中以将回收的浆料与新鲜浆料，再生化学品或水混合; 测试混合物; 过滤混合物; 并将混合物返回到抛光垫。 返回到垫的体积稍微超过恢复的体积，导致卡环溢出。 冲洗水以相同的方式回收，以保持抛光垫在抛光周期之间变湿。
-
公开(公告)号：US5556553A
公开(公告)日：1996-09-17
申请号：US447752
申请日：1995-05-23
CPC分类号： C23F1/46
摘要： A process for control of recycle of ammoniacal copper etchant which uses metallic aluminum to remove copper without substantially adding undesirable byproducts, by controlling the temperature and mixture rate of the removal process. The very rapid reaction can be controlled by using a diluent of copper-free etchant, heating to process temperature, then adding spent, copper containing etchant at a controlled rate while actively cooling the system to control the temperature. The copper concentration can be monitored by colorimetry while maintaining the pH above pH 8. The separated metallic copper and aluminum hydroxide sludge are easily filtered from the etchant. The purified etchant is now suitable for chemical adjustment and reuse.
摘要翻译： 用于控制氨铜腐蚀剂的再循环的方法，其通过控制除去过程的温度和混合速率，其使用金属铝去除铜而基本上不加入不需要的副产物。 可以通过使用无铜蚀刻剂的稀释剂，加热至加工温度，然后以有控制的速率加入废铜的蚀刻剂，同时主动冷却系统以控制温度，来控制非常快的反应。 可以通过比色法监测铜浓度，同时保持pH高于pH8。分离的金属铜和氢氧化铝污泥容易从蚀刻剂中过滤。 纯化的蚀刻剂现在适用于化学调整和再利用。
-
公开(公告)号：US5512201A
公开(公告)日：1996-04-30
申请号：US388444
申请日：1995-02-13
申请人： Rajwant Singh , Nenad Mandich , Gerald A. Krulik
发明人： Rajwant Singh , Nenad Mandich , Gerald A. Krulik
CPC分类号： C23F1/44
摘要： A metal dissolving liquid and method for stripping tin and solder coatings, including the underlying tin-copper alloy, from the copper substrate of a printed circuit board. The liquid includes an aqueous solution of nitric acid in an amount sufficient to dissolve solder and tin, a source of ferric ions in an amount sufficient to dissolve tin-copper alloy, a source of halide ions in an amount sufficient to solubilize tin, an effective amount of methylsulfonic acid as promoter for complete stripping, and a source of an organic, water soluble amine. The combination of ingredients will substantially eliminate sludge formation, reduce attack on the copper substrate and provide a bright copper finish after solder removal. A liquid further including organic triazoles including benzotriazole in amounts not more than about 5% by weight and sulfamic ions in amounts not more than about 2.5% by weight.
摘要翻译： 一种金属溶解液以及从印刷电路板的铜基底上剥离锡和焊料涂层（包括下面的锡 - 铜合金）的方法。 该液体包括硝酸水溶液，其量足以溶解锡和锡，铁离子源的量足以溶解锡 - 铜合金，卤素源的量足以溶解锡，有效 甲基磺酸的量作为完全汽提的促进剂，以及有机水溶性胺的来源。 成分的组合将基本上消除污泥形成，减少对铜基材的侵蚀并且在去除焊料后提供亮的铜表面。 进一步包括含量不超过约5重量％的有机三唑（包括苯并三唑）和不超过约2.5重量％的氨基磺酸根离子的液体。
-
-
-
-
-
-
-
-
-
搜索结果
37 条记录 (耗时 0.022 秒)
