Process for selectively depositing copper aluminum alloy onto a substrate
    2.
    发明授权
    Process for selectively depositing copper aluminum alloy onto a substrate 失效
    将铜铝合金选择性沉积到基底上的工艺

    公开(公告)号:US5273775A

    公开(公告)日:1993-12-28

    申请号:US867599

    申请日:1992-04-13

    摘要: An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.

    摘要翻译: 提供了一种改进的方法,用于在图案化的硅衬底上沉积薄的铜铝合金膜。 最初在衬底的表面上形成符合现有图案的铜基底层,然后与胺铝化合物的蒸气接触,这导致铝被选择性地沉积在基底的铜基底层部分上。 优选地,使用化学气相沉积从铜(I)全氟烷基-β-二酮络合物和烯烃或甲硅烷基烯烃复合物将铜施加到扩散阻挡表面,例如钨。 开发合金膜的整个过程可以不超过200℃进行。

    Hot filament CVD of thick, adherent and coherent polycrystalline diamond
films
    6.
    发明授权
    Hot filament CVD of thick, adherent and coherent polycrystalline diamond films 失效
    厚丝,粘附和相干多晶金刚石薄膜的热丝CVD

    公开(公告)号:US5147687A

    公开(公告)日:1992-09-15

    申请号:US707984

    申请日:1991-05-22

    IPC分类号: C23C16/27 C23C16/54

    摘要: A thick, adherent and coherent polycrystalline diamond (PCD) coated substrate product is disclosed which comprises either a metallic or ceramic substrate and a plurality of separately deposited PCD layers of substantially uniform microstructure and having high electrical resistivity. The method for depositing multi-layers of PCD film onto the substrate comprises chemically depositing at least two separate polycrystalline diamond layers onto the substrate deposition conditions which are substantially different between cycles. The method enables one to deposit PCD films having a thickness of at least 12 microns for applications on flat as well as curved substrates having wide use in the electronics industry. Thick PCT films of this invention have been found to be ideal for dissipating heat from radio frequency (RF) and microwave (MW) devices.

    摘要翻译: 公开了一种厚的,粘附和一致的多晶金刚石(PCD)涂覆的基底产品,其包括金属或陶瓷基底和多个基本上均匀的微结构并且具有高电阻率的单独沉积的PCD层。 将多层PCD膜沉积到衬底上的方法包括将至少两个单独的多晶金刚石层化学沉积到在循环之间基本不同的衬底沉积条件上。 该方法使得能够沉积具有至少12微米厚度的PCD膜用于在电子工业中广泛使用的平面以及弯曲基板上的应用。 已经发现本发明的PCT薄膜对于从射频(RF)和微波(MW)装置中散热是理想的。

    Catalyst for selective conversion of synthesis gas and method of making
the catalyst
    7.
    发明授权
    Catalyst for selective conversion of synthesis gas and method of making the catalyst 失效
    用于选择性转化合成气的催化剂和制备催化剂的方法

    公开(公告)号:US4619910A

    公开(公告)日:1986-10-28

    申请号:US741403

    申请日:1985-06-05

    摘要: A Fischer-Tropsch (F-T) catalyst, a method of making the catalyst and an F-T process utilizing the catalyst by which synthesis gas, particularly carbon-monoxide rich synthesis gas is selectively converted to higher hydrocarbons of relatively narrow carbon number range. In general, the selective and notably stable catalyst, consists of an inert carrier first treated with a Group IV B metal compound (such as zirconium or titanium), preferably an alkoxide compound, and subsequently treated with an organic compound of an F-T metal catalyst, such as cobalt, iron or ruthenium carbonyl. Reactions with air and water and calcination are specifically avoided in the catalyst preparation procedure.

    摘要翻译: 费 - 托(F-T)催化剂,制备催化剂的方法和利用催化剂的F-T方法,其中合成气,特别是一氧化碳浓度合成气选择性地转化为碳数范围相对较窄的高级烃。 通常,选择性和特别稳定的催化剂由首先用ⅣB族金属化合物(例如锆或钛),优选醇盐化合物处理的惰性载体组成,随后用FT金属催化剂的有机化合物处理, 例如钴,铁或羰基钌。 在催化剂制备过程中特别避免了与空气和水的反应和煅烧。

    Method of manufacturing hydrogen peroxide
    8.
    发明授权
    Method of manufacturing hydrogen peroxide 失效
    制造过氧化氢的方法

    公开(公告)号:US4336240A

    公开(公告)日:1982-06-22

    申请号:US256438

    申请日:1981-04-22

    IPC分类号: C01B15/029 C01B15/02

    CPC分类号: C01B15/029

    摘要: A process for producing hydrogen peroxide wherein a gaseous mixture comprising hydrogen and oxygen is contacted with a catalyst in the presence of water and an organic solvent wherein:(i) the organic solvent is immiscible with water and unreactive with hydrogen peroxide under the contacting conditions;(ii) the distribution coefficient for hydrogen peroxide between the water and the organic solvent is greater than 1;(iii) the catalyst is of the formula L.sub.2 MX.sub.2 wherein L is a ligand represented by the formula A R.sub.1 R.sub.2 R.sub.3 wherein R.sub.1 R.sub.2 and R.sub.3 are alkyl, cycloalkyl or aryl groups, hydrogen or halogen, A is a Group 5b element selected from the group consisting of nitrogen, phosphorous and arsenic, M is a Group 8 metal and X is halogen, said catalyst being soluble in said organic solvent and insoluble in water; and(iv) the gaseous mixture is non-ignitable under the process conditionscharacterized in that the organic solvent is selected from the group consisting of fluorocarbons, halofluorocarbons and mixtures thereof.

    摘要翻译: 一种生产过氧化氢的方法,其中包含氢气和氧气的气体混合物在水和有机溶剂存在下与催化剂接触,其中:(i)有机溶剂与水不混溶,在接触条件下与过氧化氢不反应; (ii)水和有机溶剂之间的过氧化氢分配系数大于1; (iii)催化剂具有式L2MX2,其中L是由式A R1R2 R3表示的配体,其中R1R2和R3是烷基,环烷基或芳基,氢或卤素,A是选自组中的第5b族元素 由氮,磷和砷组成,M是第8族金属,X是卤素,所述催化剂可溶于所述有机溶剂并且不溶于水; 和(iv)在工艺条件下气态混合物是不可燃的,其特征在于有机溶剂选自碳氟化合物,卤代氟烃及其混合物。

    Synthesis of hydrogen peroxide
    9.
    发明授权
    Synthesis of hydrogen peroxide 失效
    合成过氧化氢

    公开(公告)号:US4128627A

    公开(公告)日:1978-12-05

    申请号:US774577

    申请日:1977-03-04

    摘要: Hydrogen peroxide is synthesized by reacting hydrogen and oxygen in a two phase mixture of water and an organic. The mixture contains a catalyst which is insoluble in water but dissolves in the organic. The hydrogen peroxide is extracted in the water.The catalyst is L.sub.2 MX.sub.2 where:L is a ligand containing a Group 5b element (preferably phosphorous);M is a Group 8 metal (preferably palladium); andX is a halogen (preferably chlorine).

    摘要翻译: 过氧化氢通过氢和氧在水和有机物的两相混合物中反应来合成。 该混合物含有不溶于水但溶于有机物的催化剂。 过氧化氢在水中提取。