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6 条记录 (耗时 0.023 秒)

    Process for selectively depositing copper aluminum alloy onto a substrate
    1.
    发明授权
    Process for selectively depositing copper aluminum alloy onto a substrate 失效
    将铜铝合金选择性沉积到基底上的工艺

    公开(公告)号：US5273775A

    公开(公告)日：1993-12-28

    申请号：US867599

    申请日：1992-04-13

    申请人： Paul N. Dyer ,  Stephen M. Fine ,  John A. T. Norman

    发明人： Paul N. Dyer ,  Stephen M. Fine ,  John A. T. Norman

    IPC分类号： C23C16/02 ,  C23C14/16 ,  C23C16/04 ,  C23C16/18 ,  C23C16/20 ,  H01L21/285 ,  H01L21/3205 ,  C23C16/00

    CPC分类号： H01L21/32051 ,  C23C14/16 ,  C23C16/04 ,  C23C16/18 ,  C23C16/20 ,  H01L21/28562

    摘要： An improved method is provided for depositing a thin copper aluminum alloy film on a patterned silicon substrate. A copper base layer conforming to the existing pattern is initially formed on the surface of the substrate, followed by contact with vapors of an aminealane compound, which causes aluminum to be selectively deposited on the copper base layer portion of the substrate. Preferably, copper is applied to a diffusion barrier surface such as tungsten using chemical vapor deposition from a complex of copper (I) perfluoroalkyl-.beta.-diketonate and an olefin or silylolefin. The entire process of developing an alloy film can be carried out without exceeding 200.degree. C.

    摘要翻译： 提供了一种改进的方法，用于在图案化的硅衬底上沉积薄的铜铝合金膜。 最初在衬底的表面上形成符合现有图案的铜基底层，然后与胺铝化合物的蒸气接触，这导致铝被选择性地沉积在基底的铜基底层部分上。 优选地，使用化学气相沉积从铜（I）全氟烷基-β-二酮络合物和烯烃或甲硅烷基烯烃复合物将铜施加到扩散阻挡表面，例如钨。 开发合金膜的整个过程可以不超过200℃进行。

    Moisture removal and passivation of surfaces
    4.
    发明授权
    Moisture removal and passivation of surfaces 失效
    水分去除和表面钝化

    公开(公告)号：US5479727A

    公开(公告)日：1996-01-02

    申请号：US329029

    申请日：1994-10-25

    申请人： Stephen M. Fine ,  Andrew D. Johnson ,  John G. Langan

    发明人： Stephen M. Fine ,  Andrew D. Johnson ,  John G. Langan

    IPC分类号： F26B7/00 ,  F26B19/00 ,  F26B21/14 ,  F26B3/00

    CPC分类号： F26B21/14

    摘要： The present invention is a process of removal of moisture from surfaces, such as metal conduit for transmission of high purity gases in electronic component fabrication facilities, and the passivation of such metal surfaces to retard the readsorption of moisture, wherein the moisture removal and passivation is enhanced using an agent of the formula: R.sub.a SiX.sub.b Y.sub.c Z.sub.d where a =1-3; b, c, and d are individually 0-3 and a+b+c+d=4; R is one or more organic groups; and at least one of X, Y or Z have a bond to silicon that is readily hydrolyzable. The moisture removal and passivation is conducted at less than 65.degree. C. and at least ambient pressure.

    摘要翻译： 本发明是从表面除去水分的方法，例如用于在电子元件制造设备中传输高纯度气体的金属导管，以及这种金属表面的钝化以阻止水分的再吸收，其中除湿和钝化是 使用下式的试剂增强：RaSiXbYcZd其中a = 1-3; b，c和d分别为0-3和a + b + c + d = 4; R是一个或多个有机基团; 并且X，Y或Z中的至少一个与硅键合，其易于水解。 除湿和钝化在低于65℃和至少环境压力下进行。