公开(公告)号：US20120329272A1

公开(公告)日：2012-12-27

申请号：US13167176

申请日：2011-06-23

申请人： John C. Arnold ,  Jennifer Schuler ,  Yunpeng Yin

发明人： John C. Arnold ,  Jennifer Schuler ,  Yunpeng Yin

IPC分类号： H01L21/283 ,  H01L21/311

CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： A method for forming small dimension openings in the organic masking layer of tri-layer lithography. The method includes forming an organic polymer layer over a semiconductor substrate; forming a silicon containing antireflective coating on the organic polymer layer; forming a patterned photoresist layer on the antireflective coating, the patterned photoresist layer having an opening therein; performing a first reactive ion etch to transfer the pattern of the opening into the antireflective coating to form a trench in the antireflective coating, the organic polymer layer exposed in a bottom of the trench; and performing a second reactive ion etch to extend the trench into the organic polymer layer, the second reactive ion etch forming a polymer layer on sidewalls of the trench, the second reactive ion etch containing a species derived from a gaseous hydrocarbon.

摘要翻译： 在三层光刻的有机掩模层中形成小尺寸开口的方法。 该方法包括在半导体衬底上形成有机聚合物层; 在有机聚合物层上形成含硅抗反射涂层; 在所述抗反射涂层上形成图案化的光致抗蚀剂层，所述图案化的光致抗蚀剂层在其中具有开口; 执行第一反应离子蚀刻以将开口的图案转移到抗反射涂层中以在抗反射涂层中形成沟槽，有机聚合物层暴露在沟槽的底部; 以及执行第二反应离子蚀刻以将所述沟槽延伸到所述有机聚合物层中，所述第二反应离子蚀刻在所述沟槽的侧壁上形成聚合物层，所述第二反应离子蚀刻包含衍生自气态烃的物质。

公开(公告)号：US08735283B2

公开(公告)日：2014-05-27

申请号：US13167176

申请日：2011-06-23

申请人： John C. Arnold ,  Jennifer Schuler ,  Yunpeng Yin

发明人： John C. Arnold ,  Jennifer Schuler ,  Yunpeng Yin

IPC分类号： H01L21/283

CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： A method for forming small dimension openings in the organic masking layer of tri-layer lithography. The method includes forming an organic polymer layer over a semiconductor substrate; forming a silicon containing antireflective coating on the organic polymer layer; forming a patterned photoresist layer on the antireflective coating, the patterned photoresist layer having an opening therein; performing a first reactive ion etch to transfer the pattern of the opening into the antireflective coating to form a trench in the antireflective coating, the organic polymer layer exposed in a bottom of the trench; and performing a second reactive ion etch to extend the trench into the organic polymer layer, the second reactive ion etch forming a polymer layer on sidewalls of the trench, the second reactive ion etch containing a species derived from a gaseous hydrocarbon.

摘要翻译： 在三层光刻的有机掩模层中形成小尺寸开口的方法。 该方法包括在半导体衬底上形成有机聚合物层; 在有机聚合物层上形成含硅抗反射涂层; 在所述抗反射涂层上形成图案化的光致抗蚀剂层，所述图案化的光致抗蚀剂层在其中具有开口; 执行第一反应离子蚀刻以将开口的图案转移到抗反射涂层中以在抗反射涂层中形成沟槽，有机聚合物层暴露在沟槽的底部; 以及执行第二反应离子蚀刻以将所述沟槽延伸到所述有机聚合物层中，所述第二反应离子蚀刻在所述沟槽的侧壁上形成聚合物层，所述第二反应离子蚀刻包含衍生自气态烃的物质。

公开(公告)号：US20130001750A1

公开(公告)日：2013-01-03

申请号：US13171868

申请日：2011-06-29

申请人： JOHN C. ARNOLD ,  Sivananda K. Kanakasabapathy ,  Stefan Schmitz ,  Yunpeng Yin

发明人： JOHN C. ARNOLD ,  Sivananda K. Kanakasabapathy ,  Stefan Schmitz ,  Yunpeng Yin

IPC分类号： H01L29/06 ,  H01L21/311

CPC分类号： H01L21/3088 ,  H01L21/3086 ,  H01L21/845 ,  H01L29/66795

摘要： A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; forming a large feature (FX) mask on the metal hardmask layer; etching the mandrel mask and the FX mask simultaneously into the metal hardmask layer; etching the mandrel mask and the FX mask into the SOI layer using the etched metal hardmask layer as a mask.

摘要翻译： 用于形成鳍状场效应晶体管（FinFET）器件的方法包括在膜堆叠的金属硬掩模层上形成心轴掩模，所述膜堆叠包括位于金属硬掩模层下面的绝缘体上硅层（SOI）层; 在金属硬掩模层上形成大特征（FX）掩模; 将芯棒掩模和FX掩模同时蚀刻到金属硬掩模层中; 使用蚀刻的金属硬掩模层作为掩模将芯棒掩模和FX掩模刻蚀成SOI层。

公开(公告)号：US08916337B2

公开(公告)日：2014-12-23

申请号：US13402068

申请日：2012-02-22

申请人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Steven J. Holmes ,  David V. Horak ,  Muthumanickam Sankarapandian ,  Yunpeng Yin

IPC分类号： G03F7/26

CPC分类号： H01L23/5226 ,  G03F7/0035 ,  G03F7/091 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76816 ,  H01L2924/0002 ,  Y10T428/24355 ,  H01L2924/00

摘要： A first metallic hard mask layer over an interconnect-level dielectric layer is patterned with a line pattern. At least one dielectric material layer, a second metallic hard mask layer, a first organic planarization layer (OPL), and a first photoresist are applied above the first metallic hard mask layer. A first via pattern is transferred from the first photoresist layer into the second metallic hard mask layer. A second OPL and a second photoresist are applied and patterned with a second via pattern, which is transferred into the second metallic hard mask layer. A first composite pattern of the first and second via patterns is transferred into the at least one dielectric material layer. A second composite pattern that limits the first composite pattern with the areas of the openings in the first metallic hard mask layer is transferred into the interconnect-level dielectric layer.

摘要翻译： 在互连级介质层上的第一金属硬掩模层用线图案图案化。 在第一金属硬掩模层上方施加至少一个介电材料层，第二金属硬掩模层，第一有机平坦化层（OPL）和第一光致抗蚀剂。 第一通孔图案从第一光致抗蚀剂层转移到第二金属硬掩模层中。 第二OPL和第二光致抗蚀剂被施加和图案化，第二通孔图案被转移到第二金属硬掩模层中。 第一和第二通孔图案的第一复合图案被转移到至少一个介电材料层中。 将第一复合图案与第一金属硬掩模层中的开口的面积限制的第二复合图案被转移到互连级介质层中。

公开(公告)号：US08470711B2

公开(公告)日：2013-06-25

申请号：US12952248

申请日：2010-11-23

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

IPC分类号： H01L21/44

CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

公开(公告)号：US20120244711A1

公开(公告)日：2012-09-27

申请号：US13069536

申请日：2011-03-23

申请人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

发明人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

IPC分类号： H01L21/31

CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.

摘要翻译： 提出了一种执行侧壁间隔成像器传输的改进方法。 该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

公开(公告)号：US08883649B2

公开(公告)日：2014-11-11

申请号：US13069536

申请日：2011-03-23

申请人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

发明人： Yunpeng Yin ,  John C. Arnold ,  Matthew E. Colburn ,  Sean D. Burns

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308

CPC分类号： H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.

摘要翻译： 提出了一种执行侧壁间隔成像器传输的改进方法。 该方法包括在多个心轴旁边形成一组侧壁间隔物，该组侧壁间隔物直接位于硬掩模层的顶部上; 将所述一组侧壁间隔物的至少一部分图像转印到所述硬掩模层以形成器件图案; 并将器件图案从硬掩模层转移到硬掩模层下面的衬底。

公开(公告)号：US20120126358A1

公开(公告)日：2012-05-24

申请号：US12952248

申请日：2010-11-23

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Steven J. Holmes ,  Yunpeng Yin

IPC分类号： H01L21/311 ,  H01L23/00 ,  H01L21/768

CPC分类号： H01L23/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for tone inversion for integrated circuit fabrication includes providing a substrate with an underlayer on top of the substrate; creating a first pattern, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; covering the first pattern with a layer of image reverse material (IRM); and etching the second pattern into the substrate. A structure for tone inversion for integrated circuit fabrication includes a substrate; a partially etched underlayer comprising a first pattern located over the substrate, the first pattern being partially etched into a portion of the underlayer such that a remaining portion of the underlayer is protected and forms a second pattern, and such that the first pattern does not expose the substrate located underneath the underlayer; and an image reversal material (IRM) layer located over the partially etched underlayer.

摘要翻译： 用于集成电路制造的色调反转的方法包括：在衬底的顶部上提供具有底层的衬底; 产生第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露位于所述底层下方的所述基板; 用一层图像反向材料（IRM）覆盖第一个图案; 并将第二图案刻蚀成衬底。 用于集成电路制造的色调反转的结构包括：衬底; 部分蚀刻的底层包括位于所述衬底上方的第一图案，所述第一图案被部分地蚀刻到所述底层的一部分中，使得所述底层的剩余部分被保护并形成第二图案，并且使得所述第一图案不暴露 底层位于底层下方; 以及位于部分蚀刻的底层上方的图像反转材料（IRM）层。

公开(公告)号：US08119531B1

公开(公告)日：2012-02-21

申请号：US13013935

申请日：2011-01-26

申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Yunpeng Yin

发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  Yunpeng Yin

IPC分类号： H01L21/311

CPC分类号： H01L21/0337 ,  H01L21/0331

摘要： A method of forming a trench is provided that includes providing a stack having a semiconductor layer or dielectric layer, a metal nitride layer, a leveling layer, and a first mask layer. First trenches are etched through the first mask layer and the leveling layer. The first mask layer is removed. A second mask layer is formed on the leveling layer. Second trenches are formed through the second mask layer, wherein the base of the second trenches do not extend through the metal nitride layer. The second mask layer is removed. Exposed portions of the metal nitride layer are etched selectively to the semiconductor layer and remaining portions of the leveling layer to extend the first trenches and the second trenches into contact with an upper surface of the semiconductor layer.

摘要翻译： 提供一种形成沟槽的方法，其包括提供具有半导体层或电介质层的叠层，金属氮化物层，流平层和第一掩模层。 通过第一掩模层和流平层蚀刻第一沟槽。 第一个掩模层被去除。 在平整层上形成第二掩模层。 通过第二掩模层形成第二沟槽，其中第二沟槽的基极不延伸穿过金属氮化物层。 去除第二掩模层。 金属氮化物层的暴露部分被选择性地蚀刻到半导体层和平整层的剩余部分，以使第一沟槽和第二沟槽延伸与半导体层的上表面接触。

公开(公告)号：US08586482B2

公开(公告)日：2013-11-19

申请号：US13171868

申请日：2011-06-29

申请人： John C. Arnold ,  Sivananda K. Kanakasabapathy ,  Stefan Schmitz ,  Yunpeng Yin

发明人： John C. Arnold ,  Sivananda K. Kanakasabapathy ,  Stefan Schmitz ,  Yunpeng Yin

IPC分类号： H01L21/311

CPC分类号： H01L21/3088 ,  H01L21/3086 ,  H01L21/845 ,  H01L29/66795

摘要： A method for formation of a fin field effect transistor (FinFET) device includes forming a mandrel mask on a metal hardmask layer of a film stack, the film stack including a silicon on insulator (SOI) layer located underneath the metal hardmask layer; forming a large feature (FX) mask on the metal hardmask layer; etching the mandrel mask and the FX mask simultaneously into the metal hardmask layer; etching the mandrel mask and the FX mask into the SOI layer using the etched metal hardmask layer as a mask.

摘要翻译： 用于形成鳍状场效应晶体管（FinFET）器件的方法包括在膜堆叠的金属硬掩模层上形成心轴掩模，所述膜堆叠包括位于金属硬掩模层下面的绝缘体上硅层（SOI）层; 在金属硬掩模层上形成大特征（FX）掩模; 将芯棒掩模和FX掩模同时蚀刻到金属硬掩模层中; 使用蚀刻的金属硬掩模层作为掩模将芯棒掩模和FX掩模刻蚀成SOI层。