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    APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING
    2.
    发明申请
    APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
    用于通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的装置

    公开(公告)号：US20100012029A1

    公开(公告)日：2010-01-21

    申请号：US12173198

    申请日：2008-07-15

    申请人： John C. FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

    发明人： John C. FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

    IPC分类号： B05C11/00

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/34 ,  H01J37/3444

    摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

    摘要翻译： 在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一 包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。 第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

    CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET
    3.
    发明申请
    CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET 审中-公开
    控制电介质射频射灯目标的腐蚀特性

    公开(公告)号：US20100089748A1

    公开(公告)日：2010-04-15

    申请号：US12252224

    申请日：2008-10-15

    申请人： JOHN C.FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  RongJun Wang

    发明人： JOHN C.FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  RongJun Wang

    IPC分类号： C23C14/34 ,  B32B37/12

    CPC分类号： C23C14/3407 ,  H01J37/32082 ,  H01J37/3408 ,  H01J37/347 ,  Y10T156/10

    摘要： The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.

    摘要翻译： 本发明通常包括可用于RF溅射工艺中的溅射靶组件。 溅射靶组件可以包括背板和溅射靶。 背板可以被成形为具有从背板朝向溅射靶延伸的一个或多个翅片。 溅射靶可以结合到背板的翅片上。 在溅射过程中使用的RF电流将被施加到在一个或多个鳍位置处的溅射靶。 翅片可以在对应于可以设置在背板后面的磁控管产生的磁场的位置处从背板延伸。 通过控制RF电流耦合到溅射靶以与磁场对准的位置，可以控制溅射靶的侵蚀。

    Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
    4.
    发明授权
    Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning 有权
    通过多频RF阻抗调谐来控制工件表面处的等离子体离子密度和离子能量的径向分布的方法

    公开(公告)号：US08920611B2

    公开(公告)日：2014-12-30

    申请号：US12173228

    申请日：2008-07-15

    申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

    发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

    IPC分类号： C23C14/34 ,  H01J37/34 ,  H01J37/32

    CPC分类号： H01J37/34 ,  H01J37/32165 ,  H01J37/3444

    摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

    摘要翻译： 在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至 一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

    METHOD FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING
    5.
    发明申请
    METHOD FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权
    通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的方法

    公开(公告)号：US20100012480A1

    公开(公告)日：2010-01-21

    申请号：US12173228

    申请日：2008-07-15

    申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

    发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

    IPC分类号： C23C14/46

    CPC分类号： H01J37/34 ,  H01J37/32165 ,  H01J37/3444

    摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

    摘要翻译： 在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至 一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。