公开(公告)号：US09017533B2

公开(公告)日：2015-04-28

申请号：US12173198

申请日：2008-07-15

申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/34 ,  H01J37/3444

摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

摘要翻译： 在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一 包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。 第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

公开(公告)号：US08920611B2

公开(公告)日：2014-12-30

申请号：US12173228

申请日：2008-07-15

申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01J37/32

CPC分类号： H01J37/34 ,  H01J37/32165 ,  H01J37/3444

摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

摘要翻译： 在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至 一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

公开(公告)号：US20100012480A1

公开(公告)日：2010-01-21

申请号：US12173228

申请日：2008-07-15

申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

IPC分类号： C23C14/46

CPC分类号： H01J37/34 ,  H01J37/32165 ,  H01J37/3444

摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

摘要翻译： 在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至 一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

公开(公告)号：US09062372B2

公开(公告)日：2015-06-23

申请号：US11933086

申请日：2007-10-31

申请人： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

发明人： Praburam Gopalraja ,  Jianming Fu ,  Xianmin Tang ,  John C. Forster ,  Umesh Kelkar

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/35 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/3455

摘要： A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

公开(公告)号：US06887786B2

公开(公告)日：2005-05-03

申请号：US10409406

申请日：2003-04-07

申请人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

发明人： Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  John C. Forster ,  Jick M. Yu

IPC分类号： C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/185 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

摘要翻译： 提供了第一种方法，用于通过在（1）形成在基底上的金属特征的基底上溅射沉积氮化钽层而在衬底上形成阻挡层; （2）形成在所述金属特征上的电介质层; 和（3）形成在电介质层中的通孔以暴露金属特征。 通孔具有侧壁和底部，宽度为约0.18微米或更小。 氮化钽层沉积在通孔的侧壁和底部以及电介质层的场区上; 并且在场区域具有至少约200埃的厚度。 第一种方法还包括在相同的室中在衬底上溅射沉积钽层。 该钽层的厚度在场区域上小于约100埃。 提供其他方面。

公开(公告)号：US08696875B2

公开(公告)日：2014-04-15

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述腔室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US20090053888A1

公开(公告)日：2009-02-26

申请号：US12288540

申请日：2008-10-20

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/02183 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.

摘要翻译： 一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。 通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US20110220488A1

公开(公告)日：2011-09-15

申请号：US12723187

申请日：2010-03-12

申请人： John C. Forster ,  Xianmin Tang

发明人： John C. Forster ,  Xianmin Tang

IPC分类号： C23C14/34

CPC分类号： H01J37/3491 ,  B23K1/0008 ,  B23K31/02 ,  C23C14/3407 ,  H01J37/3435 ,  H01J37/3441 ,  H01J2237/332 ,  Y10T29/49826 ,  Y10T29/49947

摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

摘要翻译： 公开了改进的目标组件和暗区屏蔽的设计。 还公开了改善暗室间隙的溅射室和溅射室中的暗空隙的改进方法。 公开了一种目标组件，其具有基本上共面的背板，并且靶与暗空间屏蔽件垂直间隔开。

公开(公告)号：US07687909B2

公开(公告)日：2010-03-30

申请号：US11809153

申请日：2007-05-30

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara

IPC分类号： H01L23/48

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.

摘要翻译： 用于半导体器件应用的金属/金属氮化物阻挡层。 阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。