公开(公告)号：US20100314244A1

公开(公告)日：2010-12-16

申请号：US12560798

申请日：2009-09-16

申请人： Karl Brown ,  Alan Ritchie ,  John A. Pipitone ,  Daniel J. Hoffman ,  Ying Rui ,  Donald J.K. Olgado

发明人： Karl Brown ,  Alan Ritchie ,  John A. Pipitone ,  Daniel J. Hoffman ,  Ying Rui ,  Donald J.K. Olgado

IPC分类号： C23C14/46

CPC分类号： C23C14/354 ,  C23C14/3471 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449

摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

公开(公告)号：US20100314245A1

公开(公告)日：2010-12-16

申请号：US12483779

申请日：2009-06-12

申请人： Karl Brown ,  Alan Ritchie ,  John A. Pipitone ,  Daniel J. Hoffman ,  Ying Rui ,  Donald J.K. Olgado

发明人： Karl Brown ,  Alan Ritchie ,  John A. Pipitone ,  Daniel J. Hoffman ,  Ying Rui ,  Donald J.K. Olgado

IPC分类号： C23C14/34

CPC分类号： C23C14/345 ,  C23C14/185 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/03762 ,  H01L31/1804 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

摘要翻译： 描述了在包括靶，衬底和工艺气体的PVD室中处理衬底的方法，其压力足以引起从靶溅射出的大部分物质的电离。 通过对目标施加非常高频的功率来维持电容耦合的高密度等离子体。 溅射的材料在等离子体中电离并通过施加到衬底的高频偏置功率朝向衬底加速。 通过修改压力和高频偏压功率中的一个或多个来控制所得膜的微观结构。

公开(公告)号：US08563428B2

公开(公告)日：2013-10-22

申请号：US13223788

申请日：2011-09-01

申请人： Karl Brown ,  Alan Ritchie ,  John Pipitone ,  Ying Rui ,  Daniel J. Hoffman

发明人： Karl Brown ,  Alan Ritchie ,  John Pipitone ,  Ying Rui ,  Daniel J. Hoffman

IPC分类号： H01L21/44

CPC分类号： C23C14/046 ,  C23C14/185 ,  C23C14/3492

摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

摘要翻译： 本文提供了以高纵横比特征沉积金属的方法。 在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子 同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在 至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

公开(公告)号：US20120028461A1

公开(公告)日：2012-02-02

申请号：US13178870

申请日：2011-07-08

申请人： Alan Ritchie ,  Karl Brown ,  John Pipitone

发明人： Alan Ritchie ,  Karl Brown ,  John Pipitone

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

摘要翻译： 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

公开(公告)号：US08846451B2

公开(公告)日：2014-09-30

申请号：US13178870

申请日：2011-07-08

申请人： Alan Ritchie ,  Karl Brown ,  John Pipitone

发明人： Alan Ritchie ,  Karl Brown ,  John Pipitone

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/285 ,  H01J37/34 ,  H01L21/768 ,  C23C14/34 ,  C23C14/04 ,  C23C14/35 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56

CPC分类号： H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

摘要翻译： 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

公开(公告)号：US08702918B2

公开(公告)日：2014-04-22

申请号：US13327689

申请日：2011-12-15

申请人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

发明人： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

IPC分类号： C23C14/56

CPC分类号： C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US09695502B2

公开(公告)日：2017-07-04

申请号：US13435956

申请日：2012-03-30

申请人： Alan Ritchie ,  Donny Young

发明人： Alan Ritchie ,  Donny Young

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/34 ,  H01J37/32495 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3405

摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.

公开(公告)号：US09255322B2

公开(公告)日：2016-02-09

申请号：US13436776

申请日：2012-03-30

申请人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

发明人： Donny Young ,  Alan Ritchie ,  Muhammad Rasheed ,  Keith A. Miller

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/32577 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3414

摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.

摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。

公开(公告)号：US09218961B2

公开(公告)日：2015-12-22

申请号：US13622769

申请日：2012-09-19

申请人： Zhenbin Ge ,  Alan Ritchie ,  Adolph Miller Allen

发明人： Zhenbin Ge ,  Alan Ritchie ,  Adolph Miller Allen

IPC分类号： C23C14/24 ,  H01L21/02 ,  C23C14/58 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768 ,  C23C14/14 ,  C23C14/34

CPC分类号： H01L21/02521 ,  C23C14/14 ,  C23C14/34 ,  C23C14/3492 ,  C23C14/54 ,  C23C14/5826 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5873 ,  H01L21/2855 ,  H01L21/76838

摘要： Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.

摘要翻译： 提供了在衬底上形成含金属层的方法，其具有良好的沉积轮廓控制和跨衬底的膜均匀性。 在一个实施例中，在衬底上溅射沉积含金属层的方法包括在处理室中转移衬底，将至少包含Ne气体的气体混合物供应到处理室中，施加RF功率以从气体形成等离子体 混合物，并在存在等离子体的情况下将含金属的层沉积到衬底上。

公开(公告)号：US08795487B2

公开(公告)日：2014-08-05

申请号：US13075841

申请日：2011-03-30

申请人： Alan Ritchie ,  Keith Miller

发明人： Alan Ritchie ,  Keith Miller

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/3455

摘要： Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.

摘要翻译： 本发明的实施例提供了用于衬底的物理气相沉积（PVD）处理的改进的方法和装置。 在一些实施例中，用于物理气相沉积（PVD）的设备可以包括目标组件，其具有靶，其包括待沉积在衬底上的源材料，相对的源极分布板，与靶的背面相对并且电耦合到靶 沿着靶的外围边缘，以及设置在靶的背面和源分布板之间的空腔; 在与所述目标的中心轴重合的点处耦合到所述源分配板的电极; 以及磁控管组件，其包括设置在所述空腔内并具有与所述目标组件的中心轴线对准的旋转轴线的可旋转磁体，其中所述磁控管组件不被驱动通过所述电极。