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1.发明授权Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning 有权用于通过多频RF阻抗调谐来控制工件表面处的等离子体离子密度和离子能量的径向分布的装置公开(公告)号：US09017533B2
公开(公告)日：2015-04-28
申请号：US12173198
申请日：2008-07-15
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译： 在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一 包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。 第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。
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2.发明申请APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING 有权用于通过多频RF阻抗调谐控制工作表面等离子体密度和离子能量的径向分布的装置公开(公告)号：US20100012029A1
公开(公告)日：2010-01-21
申请号：US12173198
申请日：2008-07-15
IPC分类号： B05C11/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/34 , H01J37/3444
摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
摘要翻译： 在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一 包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。 第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。
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公开(公告)号：US20100089748A1
公开(公告)日：2010-04-15
申请号：US12252224
申请日：2008-10-15
CPC分类号： C23C14/3407 , H01J37/32082 , H01J37/3408 , H01J37/347 , Y10T156/10
摘要： The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.
摘要翻译： 本发明通常包括可用于RF溅射工艺中的溅射靶组件。 溅射靶组件可以包括背板和溅射靶。 背板可以被成形为具有从背板朝向溅射靶延伸的一个或多个翅片。 溅射靶可以结合到背板的翅片上。 在溅射过程中使用的RF电流将被施加到在一个或多个鳍位置处的溅射靶。 翅片可以在对应于可以设置在背板后面的磁控管产生的磁场的位置处从背板延伸。 通过控制RF电流耦合到溅射靶以与磁场对准的位置，可以控制溅射靶的侵蚀。
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公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译： 本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。 在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路 环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化 弧。 在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。
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5.发明授权Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。
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公开(公告)号：US07659204B2
公开(公告)日：2010-02-09
申请号：US11691302
申请日：2007-03-26
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/0036 , C23C14/0641 , C23C14/083 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
摘要翻译： 在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。 可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。 或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。
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7.发明申请METHOD FOR ULTRA-UNIFORM SPUTTER DEPOSITION USING SIMULTANEOUS RF AND DC POWER ON TARGET 有权使用同步射频和直流电源对目标进行超均匀溅射沉积的方法公开(公告)号：US20100032289A1
公开(公告)日：2010-02-11
申请号：US12188937
申请日：2008-08-08
申请人： RONGJUN WANG , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
发明人： RONGJUN WANG , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
IPC分类号： C23C14/00
CPC分类号： C23C14/54 , C23C14/3492 , C23C14/35 , C23C14/542 , H01J37/32027 , H01J37/32091 , H01J37/34 , H01J37/347 , H01L21/02266
摘要： In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.
摘要翻译： 在等离子体增强的物理气相沉积反应器中，通过将RF和DCC功率施加到目标并且独立地调节RF和DC电源的功率电平来增强穿过工件的沉积速率的径向分布的均匀性。 通过调整磁体在目标上方的高度，调整磁体在目标上方的轨道运动的半径，并提供目标的角度边缘表面，可获得进一步优化。
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8.发明申请Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer 审中-公开用于溅射沉积导电阻挡层的集成方法，特别是钌和钽的合金，铜或铜合金种子层下面公开(公告)号：US20070059502A1
公开(公告)日：2007-03-15
申请号：US11511869
申请日：2006-08-29
申请人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
发明人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
CPC分类号： C23C14/046 , C23C14/0641 , C23C14/165 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L23/485 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , H01L2924/00
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
摘要翻译： 用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。 一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。 钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。 阻挡层和粘附层可以被溅射沉积。 其他铂族元素代替钌和其他难熔金属代替钽。 当退火时铝合金化成RuTa呈现防潮层。 铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。
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公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
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公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。
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