公开(公告)号：US20100210291A1

公开(公告)日：2010-08-19

申请号：US12705453

申请日：2010-02-12

申请人： John Lauer ,  Anthony Riemma ,  John Larson ,  Michael Smyers

发明人： John Lauer ,  Anthony Riemma ,  John Larson ,  Michael Smyers

IPC分类号： H04W4/12

CPC分类号： H04W4/14 ,  H04L51/04 ,  H04L51/14 ,  H04L51/38

摘要： A computer readable storage medium includes executable instructions, which when executed by a computer, cause the computer to designate a selected thread identification value from a collection of thread identification values based upon recognition criteria. The selected thread identification value is utilized during bidirectional text messaging between a first user and a second user.

摘要翻译： 计算机可读存储介质包括可执行指令，当由计算机执行时，计算机使得计算机基于识别标准从线程标识值的集合中指定所选择的线程标识值。 所选择的线程标识值在第一用户和第二用户之间的双向文本消息传送期间被使用。

公开(公告)号：US08463304B2

公开(公告)日：2013-06-11

申请号：US12705453

申请日：2010-02-12

申请人： John Lauer ,  Anthony Riemma ,  John Larson ,  Michael Smyers

发明人： John Lauer ,  Anthony Riemma ,  John Larson ,  Michael Smyers

IPC分类号： H04W4/00 ,  G06F15/16

CPC分类号： H04W4/14 ,  H04L51/04 ,  H04L51/14 ,  H04L51/38

摘要： A computer readable storage medium includes executable instructions, which when executed by a computer, cause the computer to designate a selected thread identification value from a collection of thread identification values based upon recognition criteria. The selected thread identification value is utilized during bidirectional text messaging between a first user and a second user.

摘要翻译： 计算机可读存储介质包括可执行指令，当由计算机执行时，计算机使得计算机基于识别标准从线程标识值的集合中指定所选择的线程标识值。 所选择的线程标识值在第一用户和第二用户之间的双向文本消息传送期间被使用。

公开(公告)号：US20070085632A1

公开(公告)日：2007-04-19

申请号：US11253464

申请日：2005-10-18

申请人： John Larson ,  Ian Hardcastle

发明人： John Larson ,  Ian Hardcastle

IPC分类号： H03H9/54

CPC分类号： H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  H03H9/605

摘要： Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. In an exemplary embodiment, the electrically-isolating acoustic coupler comprises film bulk acoustic resonators (FBARs). An electrically-isolating acoustic coupler is physically small and is inexpensive to fabricate yet is capable of passing information signals having data rates in excess of 100 Mbit/s and has a substantial breakdown voltage between its inputs and its outputs.

摘要翻译： 声学电流隔离器的实施例包括载波信号源，连接以接收信息信号的调制器和载波信号，解调器和连接在调制器和解调器之间的电隔离声耦合器。 在示例性实施例中，电隔离声耦合器包括膜体声波谐振器（FBAR）。 电隔离声耦合器物理上小，制造成本低，但能够传递数据速率超过100Mbit / s的信号信号，并且在其输入和其输出之间具有实质的击穿电压。

公开(公告)号：US20060158284A1

公开(公告)日：2006-07-20

申请号：US11373451

申请日：2006-03-09

申请人： Richard Ruby ,  John Larson

发明人： Richard Ruby ,  John Larson

IPC分类号： H04R17/00

CPC分类号： H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

摘要翻译： 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

公开(公告)号：US20050128030A1

公开(公告)日：2005-06-16

申请号：US10965474

申请日：2004-10-13

申请人： John Larson ,  Naghmeh Sarkeshik ,  Stephen Ellis

发明人： John Larson ,  Naghmeh Sarkeshik ,  Stephen Ellis

IPC分类号： H03H9/17 ,  H03H9/13 ,  H03H9/60 ,  H03H9/56 ,  H03H9/58

CPC分类号： H03H9/605 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  Y10T29/42 ,  H01L2924/00014

摘要： The film acoustically-coupled transformer (FACT) has decoupled stacked bulk acoustic resonators (DSBARs), a first electrical circuit and a second electrical circuit. Each of the DSBARs has a lower film bulk acoustic resonator (FBAR), an upper FBAR and an acoustic decoupler. The upper FBAR is stacked on the lower FBAR and the acoustic decoupler is located between the FBARs. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The first electrical circuit interconnects the lower FBARs. The second electrical circuit interconnects the upper FBARs. The FBARs of one of the DSBARs differ in electrical impedance from the FBARs of another of the DSBARs. The FACT has an impedance transformation ratio greater than 1:m2, where m is the number of DSBARs. The actual impedance transformation ratio depends on the ratio of the impedances of the FBARs.

摘要翻译： 薄膜声耦合变压器（FACT）已经分离了堆叠体声共振器（DSBAR），第一电路和第二电路。 每个DSBAR具有较低的膜体声波谐振器（FBAR），上部FBAR和声学解耦器。 上FBAR堆叠在下FBAR上，声耦合器位于FBAR之间。 每个FBAR具有相对的平面电极和电极之间的压电元件。 第一个电路将下部FBAR互连。 第二个电路将上部FBAR互连。 其中一个DSBAR的FBAR的电阻抗与另一DSBAR的FBAR不同。 FACT具有大于1：m 2的阻抗变换比，其中m是DSBAR的数量。 实际的阻抗变换比取决于FBAR的阻抗比。

公开(公告)号：US20050104690A1

公开(公告)日：2005-05-19

申请号：US10969744

申请日：2004-10-19

申请人： John Larson ,  Stephen Ellis ,  Paul Bradley ,  Yury Oshmyansky

发明人： John Larson ,  Stephen Ellis ,  Paul Bradley ,  Yury Oshmyansky

IPC分类号： H03H9/02 ,  H03H9/13 ,  H03H9/58 ,  H03H9/60 ,  H03H9/56

CPC分类号： H03H9/589 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/605

摘要： The film bulk acoustic resonator (FBAR) device comprises a substrate, an acoustic Bragg reflector over the substrate, a piezoelectric element over the acoustic Bragg reflector, and a remote-side electrode over the piezoelectric element. The acoustic Bragg reflector comprises a metal Bragg layer juxtaposed with a plastic Bragg layer. The large ratio between the acoustic impedances of the plastic material of the plastic Bragg layer and the metal of the metal Bragg layer provides sufficient acoustic isolation between the FBAR and the substrate for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the substrate.

摘要翻译： 膜体声波谐振器（FBAR）器件包括衬底，衬底上的声布拉格反射器，声布拉格反射器上方的压电元件以及压电元件上的远端侧电极。 声布拉格反射器包括与塑料布拉格层并置的金属布拉格层。 塑料布拉格层的塑料材料的声阻抗与金属布拉格层的金属之间的较大的比率在FBAR和衬底之间提供足够的声学隔离，以使FBAR器件的频率响应显示较小的（如果有的话）杂散 FBAR和基片之间的不良声耦合产生的伪影。

公开(公告)号：US20050093654A1

公开(公告)日：2005-05-05

申请号：US10965541

申请日：2004-10-13

申请人： John Larson ,  Stephen Ellis

发明人： John Larson ,  Stephen Ellis

IPC分类号： H03H9/02 ,  H03H9/13 ,  H03H9/58 ,  H03H9/60 ,  H03H9/56

CPC分类号： H03H9/605 ,  H03H9/02102 ,  H03H9/132 ,  H03H9/175 ,  H03H9/584 ,  H03H9/587 ,  H03H9/589

摘要： The band-pass filter has an upper film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each of the FBARs has opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic decoupler controls the coupling of acoustic energy between the FBARs. Specifically, the acoustic decoupler couples less acoustic energy between the FBARs than would be coupled by direct contact between the FBARs. The reduced acoustic coupling gives the band-pass filter desirable in-band and out-of-band properties.

摘要翻译： 带通滤波器具有上膜体声波谐振器（FBAR），堆叠在下FBAR上的上FBAR，以及在FBAR之间，包括声解耦材料层的声解耦器。 每个FBAR具有相对的平面电极和电极之间的压电元件。 声耦合器控制FBAR之间的声能耦合。 具体来说，声耦合器耦合FBAR之间较少的声能，而不是FBAR之间的直接接触。 减少的声耦合给出带通滤波器所需的带内和带外特性。

公开(公告)号：US20050088257A1

公开(公告)日：2005-04-28

申请号：US10994068

申请日：2004-11-18

申请人： Richard Ruby ,  John Larson ,  Paul Bradley

发明人： Richard Ruby ,  John Larson ,  Paul Bradley

IPC分类号： H03H3/02 ,  H03H3/04 ,  H03H9/02 ,  H03H9/58 ,  H03H9/54

CPC分类号： H03H3/04 ,  H03H3/02 ,  H03H9/02149 ,  H03H2003/0471 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49156

摘要： Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

摘要翻译： 在具有顶面的基板上制造声学谐振器的方法。 首先，产生上表面的凹陷。 接下来，凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来，在所述上表面上沉积第一电极。 然后，在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。

公开(公告)号：US06692293B2

公开(公告)日：2004-02-17

申请号：US10293517

申请日：2002-11-13

申请人： John M. MacLaren ,  John Larson

发明人： John M. MacLaren ,  John Larson

IPC分类号： H01R300

CPC分类号： H05K1/14 ,  H01R12/7082 ,  H01R13/64 ,  H05K1/0266 ,  Y10S439/955

摘要： A technique for identifying multiple circuit components. More specifically, a technique for identifying the location of electrical components, such as memory cartridges which have been disposed on a substrate, is described. The technique utilizes unique identifiers that correspond to locations on a substrate. Furthermore, each connector may have a unique identification device that receives the unique identifier.

摘要翻译： 用于识别多个电路组件的技术。 更具体地，描述了一种用于识别诸如已经设置在基板上的存储盒的电气部件的位置的技术。 该技术利用对应于衬底上的位置的唯一标识符。 此外，每个连接器可以具有接收唯一标识符的唯一识别装置。

公开(公告)号：US20070026590A1

公开(公告)日：2007-02-01

申请号：US11543631

申请日：2006-10-05

申请人： John Snyder ,  John Larson

发明人： John Snyder ,  John Larson

IPC分类号： H01L31/07 ,  H01L27/095 ,  H01L31/108 ,  H01L29/47 ,  H01L29/812 ,  H01L21/338

CPC分类号： H01L29/66643 ,  H01L29/0653 ,  H01L29/0895 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7839

摘要： A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.

摘要翻译： 提供一种用于调节电流流动的装置及其制造方法。 该器件包括形成肖特基势垒或肖特基状结到半导体衬底的金属 - 绝缘体 - 半导体源极 - 漏极接触。 该器件包括在半导体衬底和金属源极和/或漏极之间的界面层，从而通过施加不同的偏置条件来动态地调节肖特基势垒高度。 动态肖特基势垒调制为低漏极偏置条件提供了增加的电流，降低了肖特基势垒MOSFET器件的亚线性导通特性并提高器件性能。