Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
    1.
    发明申请
    Manufacturing process for thin film bulk acoustic resonator (FBAR) filters 审中-公开
    薄膜体声波谐振器(FBAR)滤波器的制造工艺

    公开(公告)号:US20050088257A1

    公开(公告)日:2005-04-28

    申请号:US10994068

    申请日:2004-11-18

    摘要: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

    摘要翻译: 在具有顶面的基板上制造声学谐振器的方法。 首先,产生上表面的凹陷。 接下来,凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来,在所述上表面上沉积第一电极。 然后,在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。

    Vertically separated acoustic filters and resonators
    3.
    发明申请
    Vertically separated acoustic filters and resonators 失效
    垂直分离的声学滤波器和谐振器

    公开(公告)号:US20050184830A1

    公开(公告)日:2005-08-25

    申请号:US10785525

    申请日:2004-02-23

    摘要: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    摘要翻译: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离,所以实现谐振器所需的总面积减小,从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Film acoustically-coupled transformer
    4.
    发明申请
    Film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号:US20050093655A1

    公开(公告)日:2005-05-05

    申请号:US10965637

    申请日:2004-10-13

    摘要: One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    摘要翻译: 薄膜声耦合变压器(FACT)的一个实施例包括具有下薄膜体声波谐振器(FBAR)的解耦堆叠体声波谐振器(DSBAR),堆叠在下FBAR上的上FBAR,以及在FBAR之间,声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极,它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器(DSBAR),每个如上所述,将第一电路互连到下FBAR,以及互连上FBAR的第二电路。 FACT提供阻抗变换,可以将单端电路与平衡电路相连,反之亦然,并将初级和次级电隔离。 一些实施例另外电平衡。

    Impedance transforming bulk acoustic wave baluns
    5.
    发明申请
    Impedance transforming bulk acoustic wave baluns 有权
    阻抗变换体积声波平衡不平衡变压器

    公开(公告)号:US20070176710A1

    公开(公告)日:2007-08-02

    申请号:US11343117

    申请日:2006-01-30

    IPC分类号: H03H9/56

    摘要: A bulk acoustic wave device includes an acoustic decoupler between first and second film bulk acoustic resonators (FBARs). The first FBAR is resonant at a resonant frequency of the device and includes first and second planar electrodes abutting opposite sides of a first resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to a propagation axis normal to the first and second electrodes. The first FBAR has a first electrical impedance parallel to the propagation axis. The second FBAR is resonant at the resonant frequency and includes third and fourth planar electrodes abutting opposite sides of a second resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to the propagation axis. The second FBAR has a second electrical impedance parallel to the propagation axis and different from the first electrical impedance.

    摘要翻译: 体声波器件包括第一和第二膜体声波谐振器(FBAR)之间的声耦合器。 第一FBAR以该器件的谐振频率谐振,并且包括第一和第二平面电极,该第一和第二平面电极邻接第一谐振器体的相对侧,第一谐振器体积不含任何中间电极,并且包含压电材料,该压电材料设置为平行于垂直于第一谐振器的传播轴的声振动, 第二电极。 第一个FBAR具有平行于传播轴的第一个电阻抗。 第二FBAR在谐振频率下谐振,并且包括第三和第四平面电极,其邻接没有任何中间电极的第二谐振器体的相对侧,并且包含被设置用于平行于传播轴的声学振动的压电材料。 第二FBAR具有平行于传播轴线并且不同于第一电阻抗的第二电阻抗。

    Film-bulk acoustic wave resonator with motion plate
    8.
    发明申请
    Film-bulk acoustic wave resonator with motion plate 有权
    具有运动板的膜 - 体声波谐振器

    公开(公告)号:US20060197411A1

    公开(公告)日:2006-09-07

    申请号:US11073345

    申请日:2005-03-04

    IPC分类号: H01L41/04

    CPC分类号: G01P15/097 G01L1/165

    摘要: An apparatus and method for measuring a target environmental variable (TEV) that employs a film-bulk acoustic resonator with motion plate. The film-bulk acoustic resonator (FBAR) includes an acoustic reflector formed in an FBAR wafer and a surface. A first electrode is formed on the surface of the acoustic reflector and has a surface. A piezoelectric layer is formed on the surface of the first electrode and has a surface. A second electrode is formed on the surface of the piezoelectric layer. A motion plate is suspended in space at a predetermined distance relative to the surface of the second electrode and is capacitively coupled to the FBAR.

    摘要翻译: 一种用于测量采用具有运动板的膜 - 体声波谐振器的目标环境变量(TEV)的装置和方法。 膜 - 体声波谐振器(FBAR)包括形成在FBAR晶片和表面中的声反射器。 第一电极形成在声反射体的表面上并具有表面。 在第一电极的表面上形成压电层并具有表面。 第二电极形成在压电层的表面上。 运动板相对于第二电极的表面以预定距离悬挂在空间中,并且电容耦合到FBAR。

    Thin-film acoustically-coupled transformer
    9.
    发明申请
    Thin-film acoustically-coupled transformer 有权
    薄膜声耦合变压器

    公开(公告)号:US20050093656A1

    公开(公告)日:2005-05-05

    申请号:US10699481

    申请日:2003-10-30

    摘要: One embodiment of the acoustically-coupled transformer includes a stacked bulk acoustic resonator (SBAR) having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment includes first and second stacked bulk acoustic resonators (SBARs), each as described above, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR. The transformer provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.

    摘要翻译: 声耦合变压器的一个实施例包括具有堆叠的一对膜体声波谐振器(FBAR)的层叠体声波谐振器(SBAR),它们之间具有声耦合器。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例包括如上所述的第一和第二层叠体声波谐振器(SBAR),将第一SBAR的一个FBAR与第二SBAR的一个FBAR连接的第一电路和连接第一SBAR的另一个FBAR的第二电路 SBAR到第二个SBAR的另一个FBAR。 变压器提供阻抗变换,可以将单端电路与平衡电路相连,反之亦然,电隔离一次和二次。 一些实施例另外电平衡。

    Acoustic resonator performance enhancements using recessed region
    10.
    发明申请
    Acoustic resonator performance enhancements using recessed region 有权
    使用凹陷区域的声谐振器性能增强

    公开(公告)号:US20050275486A1

    公开(公告)日:2005-12-15

    申请号:US10867540

    申请日:2004-06-14

    IPC分类号: H03H9/02 H03H9/17 H03H9/54

    摘要: An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.

    摘要翻译: 声谐振器包括基板,第一电极,压电材料层,第二电极和凹陷区域。 衬底具有第一表面。 第一电极邻近衬底的第一表面。 压电材料层与第一电极相邻。 第二电极与压电材料层相邻。 第二电极具有形状为多边形的第二电极周边。 凹陷区域与第二电极相邻。 凹陷区域具有限定凹陷区域周边的形状。 凹陷区域周边相对于第二电极周边凹进。