摘要:
An apparatus, system, and method are disclosed for determining a read voltage threshold for solid-state storage media. A data set read module reads a data set from storage cells of solid-state storage media. The data set is originally stored in the storage cells with a known bias. A deviation module determines that a read bias for the data set deviates from the known bias. A direction module determines a direction of deviation for the data set. The direction of deviation is based on a difference between the read bias of the data set and the known bias. An adjustment module adjusts a read voltage threshold for the storage cells of the solid-state storage media based on the direction of deviation.
摘要:
An apparatus, system, and method are disclosed for determining a read voltage threshold for solid-state storage media. A data set read module reads a data set from storage cells of solid-state storage media. The data set is originally stored in the storage cells with a known bias. A deviation module determines that a read bias for the data set deviates from the known bias. A direction module determines a direction of deviation for the data set. The direction of deviation is based on a difference between the read bias of the data set and the known bias. An adjustment module adjusts a read voltage threshold for the storage cells of the solid-state storage media based on the direction of deviation.
摘要:
An apparatus, system, and method are disclosed for improving performance in a non-volatile solid-state storage device. Non-volatile solid-state storage media includes a plurality of storage cells. The plurality of storage cells is configured such that storage cells in an empty state store initial binary values that satisfy a bias. An input module receives source data for storage in the plurality of storage cells of the non-volatile solid-state storage media. Bits of the source data have a source bias that is different from the bias of the plurality of storage cells. A bit biasing module biases the bits of the source data toward the bias of the plurality of storage cells. A write module writes the biased source data to the plurality of storage cells of the non-volatile solid-state storage media.
摘要:
An apparatus, system, and method are disclosed for improving performance in a non-volatile solid-state storage device. Non-volatile solid-state storage media includes a plurality of storage cells. The plurality of storage cells is configured such that storage cells in an empty state store initial binary values that satisfy a bias. An input module receives source data for storage in the plurality of storage cells of the non-volatile solid-state storage media. Bits of the source data have a source bias that is different from the bias of the plurality of storage cells. A bit biasing module biases the bits of the source data toward the bias of the plurality of storage cells. A write module writes the biased source data to the plurality of storage cells of the non-volatile solid-state storage media.
摘要:
An apparatus, system, and method are disclosed for improving performance in a non-volatile solid-state storage device. Non-volatile solid-state storage media includes a plurality of storage cells. An input module receives source data for storage in the plurality of storage cells of the non-volatile solid-state storage media. Some or all of the bits of the source data are transformed to take into account a voltage level of an empty state of the plurality of storage cells. A write module writes the transformed source data to the plurality of storage cells of the non-volatile solid-state storage media.
摘要:
An apparatus, system, and method are disclosed for improving performance in a non-volatile solid-state storage device. Non-volatile solid-state storage media includes a plurality of storage cells. The plurality of storage cells is configured such that storage cells in an empty state store initial binary values that satisfy a bias. An input module receives source data for storage in the plurality of storage cells of the non-volatile solid-state storage media. Bits of the source data have a source bias that is different from the bias of the plurality of storage cells. A bit biasing module biases the bits of the source data toward the bias of the plurality of storage cells. A write module writes the biased source data to the plurality of storage cells of the non-volatile solid-state storage media.
摘要:
An apparatus, system, and method are disclosed to increase data integrity in a redundant storage system. The receive module receives a read request to read data from a logical page spanning an array of N+P number of storage elements. The array of storage elements includes N number of the storage elements each storing a portion of an ECC chunk and P number of the storage elements storing parity data. The data read module reads data from at least a portion of a physical page on each of X number of storage elements of the N+P number of storage elements where X equals N. The regeneration module regenerates missing data. The ECC module determines if the read data and any regenerated missing data includes an error. The read data combined with any regenerated missing data includes the ECC chunk.
摘要:
An apparatus, system, and method are disclosed for detecting and replacing failed data storage. A read module reads data from an array of memory devices. The array includes two or more memory devices and one or more extra memory devices storing parity information from the memory devices. An ECC module determines, using an error correcting code (“ECC”), if one or more errors exist in tested data and if the errors are correctable using the ECC. The tested data includes data read by the read module. An isolation module selects a memory device in response to the ECC module determining that errors exists in the data read by the read module and that the errors are uncorrectable using the ECC. The isolation module also replaces data read from the selected memory device with replacement data and available data wherein the tested data includes the available data combined with the replacement data.
摘要:
An apparatus, system, and method are disclosed to increase data integrity in a redundant storage system. The receive module receives a read request to read data from a logical page spanning an array of N+P number of storage elements. The array of storage elements includes N number of the storage elements each storing a portion of an ECC chunk and P number of the storage elements storing parity data. The data read module reads data from at least a portion of a physical page on each of X number of storage elements of the N+P number of storage elements where X equals N. The regeneration module regenerates missing data. The ECC module determines if the read data and any regenerated missing data includes an error. The read data combined with any regenerated missing data includes the ECC chunk.
摘要:
An apparatus, system, and method are disclosed for reconfiguring an array of solid-state storage elements protected using parity data. The storage element error module determines that one or more storage elements are unavailable to store data (“unavailable storage elements”). The storage element resides in an array with N number of storage elements storing a first ECC chunk and P number of storage elements storing first parity data. The reconfigure data read module reads data from storage elements other than the unavailable storage elements. The data regeneration module uses the first parity data to regenerate missing data from the first ECC chunk. The data reconfiguration module creates a second ECC chunk. The new configuration storage module stores a portion of the second ECC chunk and associated second parity data on (N+P)−Z number of storage elements, wherein 1≦Z≦P.