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18 条记录 (耗时 0.035 秒)

    Sample and hold circuit
    3.
    发明授权
    Sample and hold circuit 有权
    采样保持电路

    公开(公告)号：US06323696B1

    公开(公告)日：2001-11-27

    申请号：US09456359

    申请日：1999-12-07

    申请人： Ronald M. Hickling ,  Joel N. Schulman ,  David H. Chow ,  Lap W. Chow ,  Hector J. De Los Santos

    发明人： Ronald M. Hickling ,  Joel N. Schulman ,  David H. Chow ,  Lap W. Chow ,  Hector J. De Los Santos

    IPC分类号： G11C2702

    CPC分类号： B82Y10/00 ,  G11C27/024 ,  G11C2211/5614

    摘要： A sample and hold circuit that is coupled to a control voltage source and a signal source has a sampling bridge coupled in series between a first resonant tunneling diode. The bridge comprises a plurality of diodes. The sampling bridge couples an input voltage signal that is to be sampled to a holding capacitor when the sampling bridge is forward biased. The bridge substantially decouples the input voltage signal from the holding capacitor when the sampling bridge diodes are reversed biased. The resonant tunneling diodes when reversed biased allow the bridge to be isolated from the control voltage source to allow the holding capacitor to float at the sampled value of the input voltage.

    摘要翻译： 耦合到控制电压源和信号源的采样和保持电路具有串联耦合在第一谐振隧道二极管之间的采样电桥。 该桥包括多个二极管。 当采样桥正向偏置时，采样桥将要采样的输入电压信号耦合到保持电容。 当采样桥二极管反向偏置时，桥将输入电压信号与保持电容基本上分离。 当反向偏置时，谐振隧穿二极管允许桥接器与控制电压源隔离，以使保持电容器以输入电压的采样值浮动。

    Bipolar resonant tunneling transistor
    4.
    发明授权
    Bipolar resonant tunneling transistor 失效
    双极谐振隧道晶体管

    公开(公告)号：US5606178A

    公开(公告)日：1997-02-25

    申请号：US477683

    申请日：1995-06-07

    申请人： Joel N. Schulman ,  David H. Chow

    发明人： Joel N. Schulman ,  David H. Chow

    IPC分类号： H01L29/737 ,  H01L29/06

    CPC分类号： B82Y10/00 ,  H01L29/7376

    摘要： Base contacts are made to one or both barrier layers of a resonant tunneling bipolar transistor, rather than to the quantum well. This is made possible with the use of a type II rather than a type I energy band alignment in the active region.

    摘要翻译： 基极触点被制成谐振隧穿双极晶体管的一个或两个阻挡层，而不是量子阱。 这可以通过在有源区域中使用II型而不是I型能带对准来实现。

    Epitaxially-grown backward diode
    5.
    发明授权
    Epitaxially-grown backward diode 失效
    外延生长的后向二极管

    公开(公告)号：US06812070B2

    公开(公告)日：2004-11-02

    申请号：US10339174

    申请日：2003-01-08

    申请人： Joel N. Schulman ,  David H. Chow

    发明人： Joel N. Schulman ,  David H. Chow

    IPC分类号： H01L21332

    CPC分类号： H01L29/88

    摘要： A method of epitaxially growing backward diodes and diodes grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped layer at the p-n junction in order to steepen the voltage drop at the junction, and thereby increase the electric field. By tailoring the p and n doping levels as well as adjusting the thin, highly doped layer, backward diodes may be consistently produced and may be tailored in a relatively easy and controllable fashion for a variety of applications. The use of the thin, highly doped layer provided by the present invention is discussed particularly in the context of InGaAs backward diode structures, but may be tailored to many diode types.

    摘要翻译： 本文介绍了通过该方法生长的后向二极管和二极管外延生长的方法。 更具体地说，本发明利用诸如分子束外延的外延生长技术，以便在p-n结处产生薄的高掺杂层，以便使结点处的电压降变得更高，从而增加电场。 通过调整p和n掺杂水平以及调整薄的高掺杂层，可以一致地产生后向二极管，并且可以针对各种应用以相对容易和可控的方式进行调整。 本发明提供的薄的高掺杂层的使用在InGaAs后向二极管结构的上下文中被特别讨论，但是可以针对许多二极管类型而定制。

    Integrated asymmetric resonant tunneling diode pair circuit
    6.
    发明授权
    Integrated asymmetric resonant tunneling diode pair circuit 失效
    集成非对称谐振隧道二极管对电路

    公开(公告)号：US06303941B1

    公开(公告)日：2001-10-16

    申请号：US09427196

    申请日：1999-10-25

    申请人： Yi-Ming Xie ,  Joel N. Schulman ,  David H. Chow

    发明人： Yi-Ming Xie ,  Joel N. Schulman ,  David H. Chow

    IPC分类号： H01L2906

    CPC分类号： B82Y10/00 ,  H01L29/882 ,  H03M1/34

    摘要： Presented is an integrated asymmetric resonant tunneling diode pair circuit exhibiting current-voltage characteristics providing multistable states which may be tailored for multistable solutions. Also presented are apparatus incorporating the invention therein, for which the invention provides a simple, integrated design that greatly reduces circuit complexity and size. The present invention is useful in all applications utilizing multiple peak characteristics of the current-voltage curve, such as multiple-valued logic analog-to-digital quantizers, frequency multiplication devices, waveform scrambling devices, memory operations, and parity-bit generation, among others.

    摘要翻译： 提出了一种集成的非对称谐振隧道二极管对电路，其呈现提供多态状态的电流 - 电压特性，其可以针对多态解决方案。 还提出了结合本发明的装置，其本发明提供了一种简单的集成设计，大大降低了电路的复杂性和尺寸。 本发明在利用电流 - 电压曲线的多个峰值特性的所有应用中是有用的，例如多值逻辑模数 - 数字量化器，倍频器件，波形加扰器件，存储器操作和奇偶位产生，其中 其他。

    Nipi refractive index modulation apparatus and method
    7.
    发明授权
    Nipi refractive index modulation apparatus and method 失效
    尼泊尔折射率调制装置及方法

    公开(公告)号：US4784476A

    公开(公告)日：1988-11-15

    申请号：US7298

    申请日：1987-01-27

    申请人： Joel N. Schulman ,  Uzi Efron

    发明人： Joel N. Schulman ,  Uzi Efron

    IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/01 ,  G02F1/03

    CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02F1/01716 ,  G02F2001/0151

    摘要： Various optical modulation systems and methods are disclosed which are based upon modulating the refractive index of a nipi structure. The refractive index modulation is accomplished by applying a controlled voltage differential across the n-doped and p-doped layers of the structure. Staggered contacts to the layers are formed by conductive elements which extend through the structure. One of the elements establishes ohmic contacts with the n layers, and the other with the p-layers. When implemented as an optical spatial phase modulator, one of the nipi contacts is provided as a grid which divides the structure into a matrix of pixel elements, with the other contact comprising separate wires extending through each pixel. A spatial voltage pattern is applied to the pixel wires to inject charge into their corresponding layers, and thereby modulate the refractive indices of the pixels. This imposes a desired spatial phase modulation onto a readout beam transmitted through the nipi structure. Various guided wave applications are also disclosed in which a beam is transmitted through a nipi structure parallel to the n and p layers. The nipi sturcture is not divided into pixels, but rather has a common voltage differential between its n and p layers. The structure's refractive index is spatially modulated by varying this voltage differential, whereby the spatial voltage modulation is transferred onto the beam.

    摘要翻译： 公开了基于调制nipi结构的折射率的各种光学调制系统和方法。 通过在结构的n掺杂和p掺杂层上施加受控电压差来实现折射率调制。 与层交错的触点由延伸穿过结构的导电元件形成。 元素之一与n层建立欧姆接触，而与p层建立欧姆接触。 当实现为光学空间相位调制器时，钳位触点之一被提供为格栅，其将结构分成像素元件的矩阵，而另一个触点包括延伸穿过每个像素的单独的线。 将空间电压图案施加到像素线以将电荷注入其相应的层中，从而调制像素的折射率。 这对通过nipi结构传输的读出光束施加了期望的空间相位调制。 还公开了各种导波应用，其中波束通过平行于n和p层的钳位结构传输。 钳口结构不分为像素，而是在其n层和p层之间具有公共的电压差。 通过改变该电压差来对结构的折射率进行空​​间调制，从而将空间电压调制转移到光束上。

    Type II interband heterostructure backward diodes
    8.
    发明授权
    Type II interband heterostructure backward diodes 有权
    II型带间异质结反向二极管

    公开(公告)号：US07170105B1

    公开(公告)日：2007-01-30

    申请号：US10970359

    申请日：2004-10-20

    申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

    发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

    IPC分类号： H01L29/32 ,  H01L31/0336 ,  H01L31/072 ,  H01S5/00

    CPC分类号： H01L29/88 ,  H01L29/205 ,  H01L29/885

    摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

    摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。

    Resonant tunneling diode with adjusted effective masses
    9.
    发明授权
    Resonant tunneling diode with adjusted effective masses 有权
    具有调节有效质量的谐振隧道二极管

    公开(公告)号：US06773940B2

    公开(公告)日：2004-08-10

    申请号：US10077334

    申请日：2002-02-15

    申请人： Joel N. Schulman

    发明人： Joel N. Schulman

    IPC分类号： H01L2100

    CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/882

    摘要： A tunnel diode has a quantum well having at least one layer of semiconductor material. The tunnel diode also has a pair of injection layers on either side of the quantum well. The injection layers comprise a collector layer and an emitter layer. A barrier layer is positioned between each of the injection layers and the quantum well. The quantum well has an epitaxial relationship with the emitter layer. An amount of one element of the well layer is increased to increase the lattice constant a predetermined amount. The lattice constant may have a reduction in the conduction band energy. A second element is added to the well layer to increase the conduction band energy but not to change the lattice constant. By controlling the composition in this matter, the negative resistance, and thus the effective mass, may be controlled for various diode constructions.

    摘要翻译： 隧道二极管具有至少一层半导体材料的量子阱。 隧道二极管在量子阱的两侧也具有一对注入层。 注入层包括集电极层和发射极层。 阻挡层位于每个注入层和量子阱之间。 量子阱与发射极层具有外延关系。 增加阱层的一个元素的量以增加晶格常数预定量。 晶格常数可能导致导带能量的降低。 将第二个元素添加到阱层中以增加导带能量，但不改变晶格常数。 通过控制该物质的组成，可以控制各种二极管结构的负电阻，从而有效质量。

    Laterally varying multiple diodes
    10.
    发明授权
    Laterally varying multiple diodes 失效
    侧面变化多个二极管

    公开(公告)号：US06734470B1

    公开(公告)日：2004-05-11

    申请号：US09397898

    申请日：1999-09-17

    申请人： Joel N. Schulman ,  David H. Chow

    发明人： Joel N. Schulman ,  David H. Chow

    IPC分类号： H01L2988

    CPC分类号： B82Y10/00 ,  H01L27/0814 ,  H01L29/882

    摘要： A method for producing laterally varying multiple diodes and their device embodiment are presented herein. As demonstrated, multiple resonant tunneling diodes are fabricated together utilizing a single epitaxial structure. Shallow, ion-implanted regions having varying depths, dx, define the collector contacts. Each diode is isolated electrically from the others by methods such as conventional mesa etching into the emitter layer. The varying depths, dx, provide means for varying the peak voltage of each individual diode. The peak voltage strongly depends on the depths, dx, because it comprises a space charge region where the electric field is high, and therefore the voltage drop is high. The invention disclosed herein is useful in applications such as high-speed circuits such as comparators, analog to digital converters, sample and hold circuits, logic devices, and frequency multipliers.

    摘要翻译： 本文给出了一种生产横向变化的多个二极管及其器件实施例的方法。 如所证明的，使用单个外延结构将多个谐振隧道二极管制造在一起。 具有不同深度的浅的离子注入区域dx限定了集电极触点。 每个二极管通过诸如常规台面蚀刻到发射极层中的方法与其它二极管电隔离。 变化的深度dx提供了改变每个独立二极管的峰值电压的方法。 峰值电压强度取决于深度dx，因为它包括电场高的空间电荷区域，因此电压降很高。 本文公开的本发明在诸如比较器，模数转换器，采样和保持电路，逻辑器件和频率乘法器之类的高速电路的应用中是有用的。