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    Field leakage by using a thin layer of nitride deposited by chemical vapor deposition
    1.
    发明授权
    Field leakage by using a thin layer of nitride deposited by chemical vapor deposition 有权
    通过使用通过化学气相沉积沉积的薄层氮化物来改善漏电

    公开(公告)号：US06211022B1

    公开(公告)日：2001-04-03

    申请号：US09241265

    申请日：1999-02-01

    申请人： Jonathan Lin ,  Radu Barsan ,  Sunil Mehta

    发明人： Jonathan Lin ,  Radu Barsan ,  Sunil Mehta

    IPC分类号： H01L21336

    CPC分类号： H01L21/823481 ,  H01L21/3185 ,  H01L21/76202 ,  H01L21/823418

    摘要： A nitride layer is deposited over a field oxide layer used to separate transistors formed in a substrate, the nitride layer serving to decrease transistor current leakage. The nitride layer has a dense lattice, effectively blocking H+ and Na+ penetration from overlying layers into the field oxide. Positive ions such as H+ and Na+ penetrating into the field oxide layer cause a p-substrate under the field oxide layer to become inverted or act like an n-type substrate, creating leakage current between source and drain regions of transistors which the field oxide layer separates. When high transistor threshold voltages such as 12 volts or more are desired, the nitride layer provides a significant reduction in current leakage.

    摘要翻译： 氮化物层沉积在用于分离形成在衬底中的晶体管的场氧化物层上，氮化物层用于减小晶体管电流泄漏。 氮化物层具有致密的晶格，有效地阻止H +和Na +从上覆层渗透到场氧化物中。 渗透到场氧化物层中的正离子如H +和Na +导致场氧化物层下的p衬底变为反相或类似于n型衬底，在晶体管的源极和漏极区域之间产生漏电流，其中场氧化物层 分开。 当需要诸如12伏特或更高的高晶体管阈值电压时，氮化物层显着降低电流泄漏。

    CMOS EEPROM cell with tunneling window in the read path
    3.
    发明授权
    CMOS EEPROM cell with tunneling window in the read path 失效
    CMOS EEPROM单元在通道中具有隧道窗口

    公开(公告)号：US5587945A

    公开(公告)日：1996-12-24

    申请号：US554092

    申请日：1995-11-06

    申请人： Jonathan Lin ,  Jack Z. Peng ,  Radu Barsan ,  Sunil Mehta

    发明人： Jonathan Lin ,  Jack Z. Peng ,  Radu Barsan ,  Sunil Mehta

    IPC分类号： G11C16/04 ,  H01L27/115 ,  G11C16/02

    CPC分类号： G11C16/045 ,  G11C16/0441 ,  H01L27/115 ,  G11C2216/10

    摘要： A CMOS memory cell including PMOS and NMOS transistors with a common floating gate. The CMOS memory cell includes a first capacitor connecting a first control voltage to the common floating gate and a second tunneling capacitor connected from the common floating gate to the source of the NMOS transistor. The tunneling capacitor includes a tunneling oxide region utilized to charge or discharge the floating gate during program or erase. The CMOS cell further includes a pass transistor with a source to drain path connecting the source of the NMOS transistor to a second control voltage.

    摘要翻译： CMOS存储单元包括具有公共浮动栅极的PMOS和NMOS晶体管。 CMOS存储单元包括将第一控制电压连接到公共浮置栅极的第一电容器和从公共浮置栅极连接到NMOS晶体管的源极的第二隧穿电容器。 隧道电容器包括用于在编程或擦除期间对浮动栅极充电或放电的隧道氧化物区域。 CMOS单元还包括具有将NMOS晶体管的源极连接到第二控制电压的源极到漏极路径的传输晶体管。

    Method of charging and discharging floating gage transistors to reduce leakage current
    4.
    发明授权
    Method of charging and discharging floating gage transistors to reduce leakage current 失效
    浮栅晶体管充放电方法，以减少漏电流

    公开(公告)号：US5841701A

    公开(公告)日：1998-11-24

    申请号：US785096

    申请日：1997-01-21

    申请人： Xiao-Yu Li ,  Radu Barsan ,  Sunil Mehta

    发明人： Xiao-Yu Li ,  Radu Barsan ,  Sunil Mehta

    IPC分类号： G11C16/10 ,  G11C16/12 ,  G11C11/34

    CPC分类号： G11C16/12 ,  G11C16/10

    摘要： A method for improving the endurance and reliability of a floating gate transistor often used in memory applications by controlling the electric field induced across the tunnel oxide region of the floating gate when discharging electrons from the floating gate. The method comprises the steps of: allowing the active region to ground; and applying a program voltage to the floating gate over a period of time and at a magnitude, by increasing the voltage from zero volts to the magnitude over a first period of at least 1 millisecond (ms.), maintaining the voltage at the magnitude for a second period of around 10 ms.-100 ms. sufficient to place charge on the floating gate, and decreasing the voltage from the magnitude during a third period to zero volts in not greater than 50 microseconds.

    摘要翻译： 常用于存储器应用中的浮栅晶体管的耐久性和可靠性通过控制在浮置栅极放电电子时跨越浮栅的隧道氧化物区域感应的电场的方法。 该方法包括以下步骤：允许有源区域接地; 并且通过在至少1毫秒（ms）的第一周期上将电压从零伏特增加到幅度，在一段时间和幅度上将编程电压施加到浮动栅极，将电压保持在大小为 大约10 ms.-100 ms的第二个周期。 足以在浮动栅极上放置电荷，并将电压从第三周期内的幅度降低到零伏特以不大于50微秒。

    Field implant for semiconductor device
    5.
    发明授权
    Field implant for semiconductor device 失效
    半导体器件的场植入

    公开(公告)号：US5789269A

    公开(公告)日：1998-08-04

    申请号：US692688

    申请日：1996-08-06

    申请人： Sunil Mehta ,  Jonathan Lin

    发明人： Sunil Mehta ,  Jonathan Lin

    IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L21/76

    CPC分类号： H01L29/0638 ,  H01L21/762

    摘要： The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.

    摘要翻译： 通过在野外植入之前采用侧壁间隔，在场氧化物区域的鸟喙附近和下方的半导体器件的表面处的杂质浓度降低。 所得到的半导体器件表现出降低的侧壁结电容和泄漏，增加的结击穿电压和减小的窄通道效应。

    Field implant for semiconductor device
    6.
    发明授权
    Field implant for semiconductor device 失效
    半导体器件的场植入

    公开(公告)号：US5604370A

    公开(公告)日：1997-02-18

    申请号：US501230

    申请日：1995-07-11

    申请人： Sunil Mehta ,  Jonathan Lin

    发明人： Sunil Mehta ,  Jonathan Lin

    IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H01L29/0638 ,  H01L21/762

    摘要： The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.

    摘要翻译： 通过在野外植入之前采用侧壁间隔，在场氧化物区域的鸟喙附近和下方的半导体器件的表面处的杂质浓度降低。 所得到的半导体器件表现出降低的侧壁结电容和泄漏，增加的结击穿电压和减小的窄通道效应。

    AN AUTOMATED CENTRIFUGATION DEVICE AND METHODS TO CONTINUOUSLY SEPARATE COMPONENTS FROM DIFFERENT MIXTURES
    7.
    发明公开
    AN AUTOMATED CENTRIFUGATION DEVICE AND METHODS TO CONTINUOUSLY SEPARATE COMPONENTS FROM DIFFERENT MIXTURES 审中-公开

    公开(公告)号：US20230356111A1

    公开(公告)日：2023-11-09

    申请号：US18041266

    申请日：2021-08-21

    申请人： Sunil Mehta

    发明人： Sunil Mehta

    IPC分类号： B01D17/02 ,  C12M1/00 ,  B04B7/08

    CPC分类号： B01D17/0217 ,  C12M47/02 ,  B04B7/08

    摘要： This invention relates to a continuous flow centrifugation device and method of using the device for separation of solids, particles, liquids, or gases from a mixture containing them. The device contains rotating separation chamber in which incoming material in continuously enters the chamber via an inlet and the separated materials continuously flow out via two outlets. Solids or heavier materials exit from an outlet tubing, whose opening is placed in a space that is farthest from the center of rotation and has the highest centrifugal force. The liquid/supernatant outlet is placed in the space that is closer to the center of rotation with the lowest centrifugal force. The reference of placement of inlet to solids outlet is in the same direction as the direction of rotation so that the flow of incoming material, directed from inlet to solids outlet, is in the same direction as the direction of rotation. All product contact surfaces can be disposable and diverse separation methods for different applications can be executed in a fully automated or manual manner by a controller that manages different inputs and outputs of system components.

    Identifying and ranking networked biographies and referral paths corresponding to selected qualifications
    8.
    发明申请
    Identifying and ranking networked biographies and referral paths corresponding to selected qualifications 有权
    根据选定的资格确定和排名网络传记和转介路径

    公开(公告)号：US20130018871A1

    公开(公告)日：2013-01-17

    申请号：US13182438

    申请日：2011-07-13

    申请人： Sunil Mehta ,  David Meyer ,  Poonam Murgai

    发明人： Sunil Mehta ,  David Meyer ,  Poonam Murgai

    IPC分类号： G06F17/30

    CPC分类号： G06N99/005 ,  G06F17/30554 ,  G06Q10/00

    摘要： The most common automated search methods produce less-than-ideal results when searching online resumes, profiles, and the like (“biographies”) for the identities of people with a searcher-selected qualification (“candidates”). Keywords, their proximities, and their repetitions are less informative in biographies than in other informational documents. Similarly, chains of social connection (“referral paths”) do not always reveal the likelihood or ease of a searcher's introduction to a candidate. In both cases, the display order of results may be unrelated to any estimate of merit. To answer the question “Whom do I need and how do I reach them?” a classifier system uses heuristics or algorithms adapted to match the reactions of human experts on the selected qualifications. Terms in biographies, regardless of structure, are standardized and disambiguated for accurate comparisons, meaningful context is preserved, and biographies and referral paths are scored based on expected usefulness to the searcher.

    摘要翻译： 在搜索者选择资格（候选人）的人的身份搜索在线简历，个人资料等（传记）时，最常见的自动搜索方法产生不理想的结果。 关键词，他们的接近度和重复性在传记中比在其他信息文献中的信息少。 同样，社会联系链（转介路径）并不总是揭示搜索者向候选人介绍的可能性或易用性。 在这两种情况下，结果的显示顺序可能与任何优点估计无关。 要回答我需要的问题，我该如何联系他们？ 分类器系统使用启发式或算法来适应人类专家对所选资格的反应。 传记中的术语无论结构如何，都被标准化和消歧以进行准确的比较，有意义的上下文被保留，并且基于对搜索者的预期有用性的传记和转介路径进行评分。