公开(公告)号：US4730228A

公开(公告)日：1988-03-08

申请号：US886577

申请日：1986-07-16

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H01L29/73 ,  G01K3/00 ,  G01K7/01 ,  H01L21/331 ,  H01L23/58 ,  H02H5/04

CPC分类号： G01K7/01 ,  G01K3/005 ,  H01L2924/0002 ,  Y10S323/907 ,  Y10T307/773

摘要： The temperature of the power semiconductor component is sensed by a bipolar transistor. The bipolar transistor is in series with a depletion mode MOSFET whose gate and source electrodes are connected together. The drain electrode is also connected to a threshold element. Normally, the FET has low impedance, so that at the input of the threshold element source potential, e.g. ground potential, is present. With current rising as a function of temperature, the current through the FET is limited to a constant, essentially temperature-independent value, and the potential at the input of the threshold element rises steeply. This condition is detected as an overtemperature signal.

摘要翻译： 功率半导体部件的温度由双极晶体管感测。 双极晶体管与其栅极和源极电极连接在一起的耗尽型MOSFET串联。 漏极电极也连接到阈值元件。 通常，FET具有低阻抗，使得在阈值元件源电位的输入处，例如， 地面电位存在。 随着电流随温度的升高而升高，通过FET的电流被限制在恒定的本质上与温度无关的值，并且阈值元件输入端的电位急剧上升。 该条件被检测为过热信号。

公开(公告)号：US4728826A

公开(公告)日：1988-03-01

申请号：US886576

申请日：1986-07-16

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H03K17/04 ,  H03K17/0412 ,  H03K17/08 ,  H03K17/687 ,  H03K17/695

CPC分类号： H03K17/04123 ,  H03K17/687

摘要： The voltage peaks occuring upon disconnection of inductive loads are normally attenuated by a by-pass diode connected in parallel with the load. The driving countervoltage is thereby limited to the value of the forward voltage drop of the diode. For a power MOSFET with a source-side inductive load, the driving countervoltage is increased by placing a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFET and the connection of the load which is remote from the power MOSFET. The driving countervoltage at the source now becomes the Zener voltage plus the occuring gate-source voltage of the power MOSFET.

摘要翻译： 电感负载断开时出现的电压峰值通常与负载并联连接的旁路二极管衰减。 因此驱动逆变电压被限制为二极管正向压降的值。 对于具有源极电感负载的功率MOSFET，通过在功率MOSFET的栅极和远离功率MOSFET的负载的连接之间放置附加MOSFET和齐纳二极管的串联连接来提高驱动反电压 。 源极的驱动反电压现在变成齐纳电压加功率MOSFET的栅极 - 源极电压。

公开(公告)号：US4691129A

公开(公告)日：1987-09-01

申请号：US886578

申请日：1986-07-16

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H03K17/00 ,  H03K17/0812 ,  H03K17/16 ,  H03K17/687 ,  G05F1/40 ,  H02H7/00 ,  H03K3/01

CPC分类号： H03K17/687 ,  H03K17/08122 ,  H03K17/165

摘要： When a power MOSFET operated as a source follower is driven by an electronic switch, an interruption of the connection between ground and the electronic switch may result in the output potential of the electronic switch to change so that the power MOSFET is partially switched on. This causes a considerable amount of power dissipation. Therefore, there is placed between the source and gate electrodes of the MOSFET a depletion MOSFET whose gate is connected to the terminal of the electronic switch intended for connection to ground. Thus, the power MOSFET remains non-conducting upon interruption of the connection between the electronic switch and ground.

摘要翻译： 当作为源极跟随器工作的功率MOSFET由电子开关驱动时，接地和电子开关之间的连接中断可能导致电子开关的输出电位发生变化，从而使功率MOSFET部分接通。 这导致相当大的功率消耗。 因此，放置在MOSFET的源极和栅极电极之间，其栅极连接到用于连接到地的电子开关的端子的耗尽MOSFET。 因此，功率MOSFET在电子开关和地之间的连接断开时保持不导通。

公开(公告)号：US4677325A

公开(公告)日：1987-06-30

申请号：US872354

申请日：1986-06-09

申请人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Christine Fellinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H03K17/687 ,  H03K19/0944 ,  H03K19/0948 ,  H03K17/16 ,  H03K19/094 ,  H03K19/20

CPC分类号： H03K17/6872 ,  H03K19/09446 ,  H03K19/0948

摘要： A switching circuit includes two series-connected MOSFET (1, 6) complementing one another, which are interconnected at the drain terminal of each device. The gate terminal of the MOSFET that is grounded is connected to a control input terminal (E). This gate terminal is also connected to the source terminal of a depletion FET (7). The drain terminal of the depletion FET (7) is connected to the gate terminal of the second MOSFET (6) and, in turn, is connected via a resistor (8) to a voltage source (+U). The gate terminal of the depletion FET (7) is grounded. The load (5) is then connected to the drain side of the complementary MOSFET. When the switch is in a blocking condition, the cross current is thus prevented from flowing; and the FET connected to voltage can be completely activated.

摘要翻译： 开关电路包括彼此互补的两个串联连接的MOSFET（1,6），它们在每个器件的漏极端子处互连。 接地的MOSFET的栅极端子连接到控制输入端子（E）。 该栅极端子也连接到耗尽FET（7）的源极端子。 耗尽FET（7）的漏极端子连接到第二MOSFET（6）的栅极端子，并且又通过电阻器（8）连接到电压源（+ U）。 耗尽FET（7）的栅极端子接地。 负载（5）然后连接到互补MOSFET的漏极侧。 当开关处于阻塞状态时，防止交叉电流流动; 连接到电压的FET可以被完全激活。

公开(公告)号：US4801824A

公开(公告)日：1989-01-31

申请号：US76255

申请日：1987-07-21

申请人： Christine Fellinger ,  Josef Einzinger ,  Ludwid Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Christine Fellinger ,  Josef Einzinger ,  Ludwid Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H03K17/687 ,  H03K19/0185 ,  H03K19/0948 ,  H03K17/10 ,  H03K5/04 ,  H03K17/16

CPC分类号： H03K19/09482 ,  H03K19/018507

摘要： A signal voltage (E) based upon a supply voltage must be converted to a signal voltage (A) with ground reference so as to enable further processing in a logic circuit. A simple level converter comprises a series connection of a MOSFET (T1) connected to the supply voltage; the MOSFET also comprises a resistor (T2). The source terminal of the MOSFET (T1) is located at the potential of the supply voltage. The voltage to be converted is applied between the gate terminal and the source terminal, and the converted voltage occurs at the resistor (T2). The two voltages are each limited by one Zener diode (D2, D1).

摘要翻译： 基于电源电压的信号电压（E）必须被转换为具有接地参考的信号电压（A），以便能够在逻辑电路中进一步处理。 简单的电平转换器包括连接到电源电压的MOSFET（T1）的串联连接; MOSFET还包括电阻器（T2）。 MOSFET（T1）的源极端子位于电源电压的电位。 要转换的电压施加在栅极端子和源极端子之间，转换的电压发生在电阻器（T2）处。 两个电压都由一个齐纳二极管（D2，D1）限制。

公开(公告)号：US5029322A

公开(公告)日：1991-07-02

申请号：US119354

申请日：1987-11-10

申请人： Josef Einzinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Ludwig Leipold ,  Jenoe Tihanyi ,  Roland Weber

IPC分类号： H01L25/16 ,  H01L25/18 ,  H01L29/78

CPC分类号： H01L25/18 ,  H01L2924/0002

摘要： A power MOSFET composed of a plurality of individual MOSFETs connected in parallel, wherein an additional sensing MOSFET monitors the current in the power MOSFET. The sensing MOSFET has a surface comparatively smaller than the power MOSFET and is connected in parallel with the power MOSFET with a resistor between the source of the power MOSFET and the source of the sensing MOSFET. The sensing MOSFET and resistor are integrated with an integrated circuit provided for the control of the power MOSFET.

摘要翻译： 由并联连接的多个单独的MOSFET组成的功率MOSFET，其中附加的感测MOSFET监视功率MOSFET中的电流。 感测MOSFET具有比功率MOSFET更小的表面，并且与功率MOSFET并联连接，在功率MOSFET的源极和感测MOSFET的源极之间具有电阻。 感测MOSFET和电阻器与集成电路集成，用于功率MOSFET的控制。

公开(公告)号：US4947234A

公开(公告)日：1990-08-07

申请号：US99577

申请日：1987-09-22

申请人： Josef Einzinger ,  Ludwig Leipold ,  Jeno Tihanyi ,  Roland Weber

发明人： Josef Einzinger ,  Ludwig Leipold ,  Jeno Tihanyi ,  Roland Weber

IPC分类号： H01L25/07 ,  H01L25/065 ,  H01L25/16 ,  H01L25/18 ,  H01L29/78

CPC分类号： H01L25/16 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01014 ,  H01L2924/01068 ,  H01L2924/13091

摘要： A semiconductor component with a power MOSFET and control circuit for controlling the power MOSFET. Both the power MOSFET and the control circuit have separate semiconductor bodies. The semiconductor body of the control circuit is arranged on one of the main surfaces of the semiconductor body of the power MOSFET. The control circuit is electrically insulated from the MOSFET by an insulating layer and mechanically coupled to the MOSFET by means of a bonding layer. The MOSFET is fastened to a cooling body which serves as a heat sink for the semiconductor component. The terminals of the control circuit and the MOSFET are attached to housing connections with leads.

摘要翻译： 具有功率MOSFET的半导体元件和用于控制功率MOSFET的控制电路。 功率MOSFET和控制电路都具有分离的半导体主体。 控制电路的半导体本体设置在功率MOSFET的半导体本体的主表面之一上。 控制电路通过绝缘层与MOSFET电绝缘，并通过结合层机械耦合到MOSFET。 MOSFET被固定到用作半导体部件的散热器的冷却体。 控制电路和MOSFET的端子与引线连接到外壳连接。

公开(公告)号：US20050237144A1

公开(公告)日：2005-10-27

申请号：US10521854

申请日：2003-07-16

申请人： Josef Einzinger ,  Andreas Loth

发明人： Josef Einzinger ,  Andreas Loth

IPC分类号： H01F27/28 ,  H01F17/00 ,  H01F17/02 ,  H01F27/34 ,  H01F5/00

CPC分类号： H01F17/0006 ,  H01F27/346 ,  H01F2021/125

摘要： A planar inductance, in particular for monolithic HF oscillators, with planar spiral windings, wherein each winding (1) is in the form of an “eight” with three cross-conductors (6, 7, 8) carrying current in the same direction and running between two loops (1a, 1b).

摘要翻译： 具有平面螺旋绕组的平面电感，特别是用于单片HF振荡器的平面电感，其中每个绕组（1）为“八”形，具有在相同方向上承载电流的三个交叉导体（6,7,8） 在两个循环（1a，1b）之间运行。

公开(公告)号：US07642891B2

公开(公告)日：2010-01-05

申请号：US10521854

申请日：2003-07-16

申请人： Josef Einzinger ,  Andreas Loth

发明人： Josef Einzinger ,  Andreas Loth

IPC分类号： H01F27/28

CPC分类号： H01F17/0006 ,  H01F27/346 ,  H01F2021/125

摘要： A planar inductance, such as for monolithic HF oscillators, has planar spiral windings, each with two loops, where each winding is in the form of an “eight” with cross-conductors carrying current in the same direction and running between two loops.

摘要翻译： 诸如用于单片HF振荡器的平面电感具有平面螺旋绕组，每个绕组具有两个环，其中每个绕组为“八”形，其中导体在相同方向上承载电流并在两个环之间运行。

公开(公告)号：US5714872A

公开(公告)日：1998-02-03

申请号：US670261

申请日：1996-06-14

申请人： Emil Heimerl ,  Josef Einzinger ,  Jurgen Hauenschild

发明人： Emil Heimerl ,  Josef Einzinger ,  Jurgen Hauenschild

IPC分类号： G05F1/56 ,  G05F1/565 ,  H03F3/45 ,  H03K19/00

CPC分类号： G05F1/565

摘要： A telecommunication terminal has a voltage controller (8) which controller forms at least part of an integrated circuit (1) and includes a differential amplifier (14) having a first input (+) for receiving a reference voltage (UREF), means (16, 20) for applying a load current (22) that is provided with at least one phase shifting component (23) as a function of an output voltage of the differential amplifier (14), and a feedback path for feeding back a voltage drop at the load (22) to the second (-) of the two inputs of the differential amplifier. To provide a maximum suppression of disturbances of the output voltage over a wide frequency range and guarantee the stability of the voltage controller, the phase shifting component (23) is arranged outside the integrated circuit (1) and a plurality of separate pins (4, 5) of the integrated circuit (1) are provided for coupling the phase shifting component (23) to the output of the means (16, 20) for producing a load current and to the feedback path. The invention likewise relates to a respective integrated circuit.

摘要翻译： 通信终端具有电压控制器（8），该控制器形成集成电路（1）的至少一部分，并且包括具有用于接收参考电压（UREF）的第一输入（+）的差分放大器（14），装置 ，20），用于施加作为所述差分放大器（14）的输出电压的函数的至少一个相移分量（23）的负载电流（22），以及反馈路径，用于将 差分放大器的两个输入端的负载（22）到第二个（ - ）。 为了在宽的频率范围内最大限度地抑制输出电压的干扰并保证电压控制器的稳定性，相移部件（23）被布置在集成电路（1）的外部，并且多个独立的引脚（4， 提供集成电路（1）的图5（5），用于将相移部件（23）耦合到用于产生负载电流的装置（16,20）的输出端和反馈路径。 本发明同样涉及相应的集成电路。